摘要:
To smooth silicon sliders that have been parted from each other on a wafer by DRIE, an isotropic etch using fluorine either in a gas or in an aqueous solution is performed prior to separating the individual sliders from the wafer.
摘要:
A resist transfer pad and method of use are described for forming a uniform photoresist on the surface of a workpiece such as a slider. The resist transfer pad includes a layer of cured polydimethylsiloxane (PDMS) on a cushioning layer, e.g. silicone rubber, and an optional stiffening layer. The sliders are preferably mounted on a carrier or pallet. In one preferred embodiment the loaded resist transfer pads are applied to the slider surface by roll lamination where the loaded resist transfer pad is transported by a roller system using a cover-tape and pressed against the slider surface. Subsequently the cover-tape and the resist transfer pad are lifted off and the photoresist remains on the transducer. An alternative embodiment uses a vacuum, piston laminator to press the loaded resist transfer pad onto the surface of the transducer.
摘要:
A resist transfer pad and method of use are described for forming a uniform photoresist on the surface of a workpiece such as a slider. The resist transfer pad includes a layer of cured polydimethylsiloxane (PDMS) on a cushioning layer, e.g. silicone rubber, and an optional stiffening layer. The sliders are preferably mounted on a carrier or pallet. In one preferred embodiment the loaded resist transfer pads are applied to the slider surface by roll lamination where the loaded resist transfer pad is transported by a roller system using a cover-tape and pressed against the slider surface. Subsequently the cover-tape and the resist transfer pad are lifted off and the photoresist remains on the transducer. An alternative embodiment uses a vacuum, piston laminator to press the loaded resist transfer pad onto the surface of the transducer.
摘要:
A method and apparatus for manufacturing silicon sliders with reduced susceptibility to fracture of the substrate from which they are manufactured is disclosed. A monocrystalline silicon wafer is formed having an orientation in the {100} crystallographic plane. The silicon wafer includes a notch for orienting the silicon wafer, wherein the notch is formed substantially in the direction. Sliders are formed from the silicon wafer.
摘要:
A method for manufacturing thin-film magnetic head sliders is disclosed. Initially, an elastic layer, which may be made of poly-dimethyl siloxane (PDMS), is spun on a wafer and is thermally cured. Then, a resist layer is spun on the elastic layer. Both the resist layer and the elastic layer are subsequently peeled off together from the wafer. Next, the peeled resist layer/elastic layer is applied onto a group of magnetic heads with the resist layer in direct contact with the magnetic heads. Finally, the elastic layer is peeled off from the resist layer such that the resist layer remains attaching to the magnetic heads.
摘要:
An ohmic contact for a silicon slider body is disclosed. A scanned laser beam locally heats a metal film on the slider body to interdiffuse the metal and silicon while minimizing the total thermal load on the slider body. This localized heating avoids thermal damage to the sensitive magnetic head region on the slider. The native oxide layer on the slider is removed by a sputter etch, followed by deposition of a diffusion layer. A capping layer is then deposited to reduce oxidation during subsequent processing. The metal layer is then locally annealed by scanning the laser beam over the target area. Contact resistance of less than 100 ohms is achieved while minimizing the thermal load on the slider body.
摘要:
A slider for use in a magnetic data recording system that is constructed from a Si wafer by a method that saves valuable wafer real estate by minimizing kerf related to the cutting of the wafer into slider rows. The sliders are produced from a (110) oriented Si wafer, and the sliders are parsed into rows by a process that involves forming a mask having a trench or opening between the rows of sliders at the location of the desired cut and parallel to a vertical (111) plane of the wafer. The wafer is then exposed to KOH which removes wafer material in the vertical direction through the wafer without removing wafer material in the horizontal direction. The vertical removal of wafer material is due to the extreme preferential removal of the (110) surface Si over that of the (111) surface Si. This results in a narrow straight trench being formed. The KOH etch removal can form a trench or cut having a width of only 30 to 50 um through a 1 mm thick wafer.
摘要:
A method for fabricating recording head sliders made from silicon substrates, is described. A Silicon wafer with a SiO2 overcoat is provided, and a layer of material which is resistant to Deep Reactive Ion Etching (DRIE) is deposited on the SiO2 overcoat. A patterned layer of material which is resistant to Reactive Ion Etching (RIE) is deposited on the layer of DRIE-resistant material to form a primary mask. RIE is used through the primary mask to pattern the SiO2 overcoat layer and the layer of DRIE-resistant material. The primary mask is then removing to expose the layer of DRIE-resistant material which has now been patterned to form a secondary mask. DRIE is then used through the secondary mask to cut the Si wafer into pieces. Finally, the secondary mask is removed.