Photoresist transfer pads
    2.
    发明申请
    Photoresist transfer pads 失效
    光阻传输垫

    公开(公告)号:US20050219754A1

    公开(公告)日:2005-10-06

    申请号:US10814933

    申请日:2004-03-30

    CPC分类号: G11B5/3163 G11B5/313

    摘要: A resist transfer pad and method of use are described for forming a uniform photoresist on the surface of a workpiece such as a slider. The resist transfer pad includes a layer of cured polydimethylsiloxane (PDMS) on a cushioning layer, e.g. silicone rubber, and an optional stiffening layer. The sliders are preferably mounted on a carrier or pallet. In one preferred embodiment the loaded resist transfer pads are applied to the slider surface by roll lamination where the loaded resist transfer pad is transported by a roller system using a cover-tape and pressed against the slider surface. Subsequently the cover-tape and the resist transfer pad are lifted off and the photoresist remains on the transducer. An alternative embodiment uses a vacuum, piston laminator to press the loaded resist transfer pad onto the surface of the transducer.

    摘要翻译: 描述了用于在诸如滑块的工件的表面上形成均匀光致抗蚀剂的抗蚀剂转移垫和使用方法。 抗蚀剂传递垫包括缓冲层上固化的聚二甲基硅氧烷(PDMS)层, 硅橡胶和可选的加强层。 滑块优选地安装在托架或托盘上。 在一个优选实施例中,负载的抗蚀剂转移垫通过辊压层施加到滑块表面,其中负载的阻挡层传送垫通过辊系统使用覆盖带传送并压靠在滑块表面上。 随后,覆盖带和抗蚀剂传递垫被提起并且光致抗蚀剂保留在换能器上。 替代实施例使用真空活塞层压机将负载的抗蚀剂转移垫压到换能器的表面上。

    Photoresist transfer pads
    3.
    发明授权
    Photoresist transfer pads 失效
    光阻传输垫

    公开(公告)号:US07741003B2

    公开(公告)日:2010-06-22

    申请号:US10814933

    申请日:2004-03-30

    IPC分类号: G03C1/00 G11B5/60

    CPC分类号: G11B5/3163 G11B5/313

    摘要: A resist transfer pad and method of use are described for forming a uniform photoresist on the surface of a workpiece such as a slider. The resist transfer pad includes a layer of cured polydimethylsiloxane (PDMS) on a cushioning layer, e.g. silicone rubber, and an optional stiffening layer. The sliders are preferably mounted on a carrier or pallet. In one preferred embodiment the loaded resist transfer pads are applied to the slider surface by roll lamination where the loaded resist transfer pad is transported by a roller system using a cover-tape and pressed against the slider surface. Subsequently the cover-tape and the resist transfer pad are lifted off and the photoresist remains on the transducer. An alternative embodiment uses a vacuum, piston laminator to press the loaded resist transfer pad onto the surface of the transducer.

    摘要翻译: 描述了用于在诸如滑块的工件的表面上形成均匀光致抗蚀剂的抗蚀剂转移垫和使用方法。 抗蚀剂传递垫包括缓冲层上固化的聚二甲基硅氧烷(PDMS)层, 硅橡胶和可选的加强层。 滑块优选地安装在托架或托盘上。 在一个优选实施例中,负载的抗蚀剂转移垫通过辊压层施加到滑块表面,其中负载的阻挡层传送垫通过辊系统使用覆盖带传送并压靠在滑块表面上。 随后,覆盖带和抗蚀剂传递垫被提起并且光致抗蚀剂保留在换能器上。 替代实施例使用真空活塞层压机将负载的抗蚀剂转移垫压到换能器的表面上。

    Method and apparatus for manufacturing silicon sliders with reduced susceptibility to fractures
    4.
    发明申请
    Method and apparatus for manufacturing silicon sliders with reduced susceptibility to fractures 审中-公开
    用于制造具有降低的断裂敏感性的硅滑块的方法和装置

    公开(公告)号:US20060044690A1

    公开(公告)日:2006-03-02

    申请号:US10930162

    申请日:2004-08-31

    IPC分类号: G11B5/60

    CPC分类号: G11B5/102 G11B5/3173

    摘要: A method and apparatus for manufacturing silicon sliders with reduced susceptibility to fracture of the substrate from which they are manufactured is disclosed. A monocrystalline silicon wafer is formed having an orientation in the {100} crystallographic plane. The silicon wafer includes a notch for orienting the silicon wafer, wherein the notch is formed substantially in the direction. Sliders are formed from the silicon wafer.

    摘要翻译: 公开了一种用于制造硅基滑块的方法和装置,其具有降低的它们被制造的基板的断裂敏感性。 形成在{100}晶面中具有取向的单晶硅晶片。 硅晶片包括用于定向硅晶片的凹口,其中凹口基本上沿<100>方向形成。 滑块由硅晶片形成。

    System, method, and apparatus for making ohmic contact to silicon structures with low thermal loads
    6.
    发明申请
    System, method, and apparatus for making ohmic contact to silicon structures with low thermal loads 失效
    用于与低热负荷的硅结构进行欧姆接触的系统,方法和装置

    公开(公告)号:US20060249368A1

    公开(公告)日:2006-11-09

    申请号:US11120820

    申请日:2005-05-03

    IPC分类号: B23K26/00 C23C14/32

    摘要: An ohmic contact for a silicon slider body is disclosed. A scanned laser beam locally heats a metal film on the slider body to interdiffuse the metal and silicon while minimizing the total thermal load on the slider body. This localized heating avoids thermal damage to the sensitive magnetic head region on the slider. The native oxide layer on the slider is removed by a sputter etch, followed by deposition of a diffusion layer. A capping layer is then deposited to reduce oxidation during subsequent processing. The metal layer is then locally annealed by scanning the laser beam over the target area. Contact resistance of less than 100 ohms is achieved while minimizing the thermal load on the slider body.

    摘要翻译: 公开了一种用于硅滑块体的欧姆接触。 扫描的激光束局部加热滑块体上的金属膜以相互扩散金属和硅,同时最小化滑块体上的总热负荷。 这种局部加热避免了滑块上敏感磁头区域的热损伤。 通过溅射蚀刻去除滑块上的自然氧化物层,然后沉积扩散层。 然后沉积覆盖层以在随后的处理期间减少氧化。 然后通过在目标区域上扫描激光束来对金属层进行局部退火。 实现小于100欧姆的接触电阻,同时最小化滑块体上的热负载。

    Silicon slider for magnetic recording fabricated by an alkaline etch
    7.
    发明申请
    Silicon slider for magnetic recording fabricated by an alkaline etch 失效
    用于通过碱性蚀刻制造的磁记录用硅滑块

    公开(公告)号:US20060187585A1

    公开(公告)日:2006-08-24

    申请号:US11064659

    申请日:2005-02-22

    IPC分类号: G11B5/60

    摘要: A slider for use in a magnetic data recording system that is constructed from a Si wafer by a method that saves valuable wafer real estate by minimizing kerf related to the cutting of the wafer into slider rows. The sliders are produced from a (110) oriented Si wafer, and the sliders are parsed into rows by a process that involves forming a mask having a trench or opening between the rows of sliders at the location of the desired cut and parallel to a vertical (111) plane of the wafer. The wafer is then exposed to KOH which removes wafer material in the vertical direction through the wafer without removing wafer material in the horizontal direction. The vertical removal of wafer material is due to the extreme preferential removal of the (110) surface Si over that of the (111) surface Si. This results in a narrow straight trench being formed. The KOH etch removal can form a trench or cut having a width of only 30 to 50 um through a 1 mm thick wafer.

    摘要翻译: 一种用于磁数据记录系统的滑动器,其由Si晶片构成,该方法通过将晶片切割成滑块行来减少切割,从而节省了有价值的晶片的可靠性。 滑块由(110)定向的Si晶片制成,并且滑块通过涉及在期望的切口的位置处形成具有在滑动排之间的沟槽或开口的掩模并且平行于垂直线的方法被解析成行 (111)面。 然后将晶片暴露于KOH,其通过晶片在垂直方向上去除晶片材料,而不在水平方向上移除晶片材料。 晶片材料的垂直去除是由于(110)表面Si超过(111)表面Si的极端优先移除。 这导致形成窄的直槽。 KOH蚀刻去除可以通过1mm厚的晶片形成宽度仅为30-50微米的沟槽或切口。

    Fabrication process for preparing recording head sliders made from silicon substrates with SiO2 overcoats
    8.
    发明申请
    Fabrication process for preparing recording head sliders made from silicon substrates with SiO2 overcoats 有权
    制备由SiO 2外涂层由硅衬底制成的记录头滑块的制造工艺

    公开(公告)号:US20050070118A1

    公开(公告)日:2005-03-31

    申请号:US10675203

    申请日:2003-09-29

    CPC分类号: G11B5/3173 G11B5/102

    摘要: A method for fabricating recording head sliders made from silicon substrates, is described. A Silicon wafer with a SiO2 overcoat is provided, and a layer of material which is resistant to Deep Reactive Ion Etching (DRIE) is deposited on the SiO2 overcoat. A patterned layer of material which is resistant to Reactive Ion Etching (RIE) is deposited on the layer of DRIE-resistant material to form a primary mask. RIE is used through the primary mask to pattern the SiO2 overcoat layer and the layer of DRIE-resistant material. The primary mask is then removing to expose the layer of DRIE-resistant material which has now been patterned to form a secondary mask. DRIE is then used through the secondary mask to cut the Si wafer into pieces. Finally, the secondary mask is removed.

    摘要翻译: 描述了由硅衬底制造记录头滑块的方法。 提供具有SiO 2外涂层的硅晶片,并且将耐受深反应离子蚀刻(DRIE)的材料层沉积在SiO 2外涂层上。 耐反应离子蚀刻(RIE)的图案化材料层沉积在抗DRIE材料层上以形成初级掩模。 通过初级掩模使用RIE来图案化SiO2覆盖层和DRIE抗性材料层。 然后去除主要掩模以暴露现在被图案化以形成二次掩模的耐DRIE材料层。 然后通过二次掩模使用DRIE将Si晶片切成片。 最后,二次掩模被去除。