公开(公告)号：US20120038355A1

公开(公告)日：2012-02-16

申请号：US13175382

申请日：2011-07-01

申请人： Tomoyuki SASAKI ,  Tohru OIKAWA

发明人： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC分类号： G01R33/02

CPC分类号： G01R33/1284 ,  G11C11/16

摘要： A magnetic sensor is provided with a channel of a semiconductor, a first insulating film and a metal body arranged opposite to each other with the channel in between, a ferromagnet provided on the first insulating film, a first reference electrode connected to the metal body, a second reference electrode connected to the metal body, a magnetic shield covering a portion opposed to the ferromagnet in the channel, and a second insulating film provided between the channel and the magnetic shield. The magnetic shield has a through hole extending toward the portion opposed to the ferromagnet in the channel.

摘要翻译： 磁传感器设置有沟道，半导体通道，第一绝缘膜和金属体，第一绝缘膜和金属体之间具有通道相互布置，设置在第一绝缘膜上的铁磁体，连接到金属体的第一参考电极， 连接到金属体的第二参考电极，覆盖与通道中的铁磁体相对的部分的磁屏蔽，以及设置在通道和磁屏蔽之间的第二绝缘膜。 磁屏蔽件具有向通道中与铁磁体相对的部分延伸的通孔。

公开(公告)号：US20100314702A1

公开(公告)日：2010-12-16

申请号：US12796034

申请日：2010-06-08

申请人： Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

发明人： Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided.

摘要翻译： 提供自旋传输装置，其包括由半导体材料构成的通道，经由第一绝缘层布置在通道上的磁化固定层，经由第二绝缘层布置在通道上的无磁化层，以及第一和第二电极 布置在通道上，其中通道的第一区域的载流子密度包括与第一绝缘层的接触表面，通道的第二区域包括与第二绝缘层的接触表面，通道的第三区域包括相对的 并且包括与第二电极相反的表面的沟道的第四区域高于整个通道的平均载流子密度。 因此，可以提供能够在抑制旋转散射的同时实现良好的自旋运输和电阻特性的自旋输送装置。

公开(公告)号：US07471551B2

公开(公告)日：2008-12-30

申请号：US11802518

申请日：2007-05-23

申请人： Tohru Oikawa

发明人： Tohru Oikawa

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： The direction of magnetization of a reading ferromagnetic material 5R forming a spin filter when reading is the same as that of a pinned layer 1. In this case, a torque that works on the spin of a free layer 3 due to a spin polarized current becomes “zero.” When the element size is made small so as to improve the integration degree of the magnetic memory, according to the scaling law, the writing current can be made small. In the present invention, the resistance to the spin injection magnetization reversal due to a reading current is high, so that the magnitude of the writing current can be lowered.

摘要翻译： 当读取时形成自旋滤波器的读取铁磁材料5R的磁化方向与被钉扎层1相同。在这种情况下，由自旋极化电流引起的自由层3的旋转的转矩变为 “零。” 当使元件尺寸变小以提高磁存储器的积分度时，根据比例定律，可以使写入电流较小。 在本发明中，由于读取电流而导致的自旋注入磁化反转的阻力高，从而能够降低写入电流的大小。

公开(公告)号：US20080006890A1

公开(公告)日：2008-01-10

申请号：US11810835

申请日：2007-06-06

申请人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

发明人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

IPC分类号： H01L29/82

CPC分类号： H01L27/226 ,  G11C11/16 ,  H01L43/08

摘要： In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t

摘要翻译： 在磁存储装置中，写入周期期间的磁化特性被均匀化，并且有效地执行写入周期。 在磁存储装置中，软磁体被形成为完全或部分地覆盖线，并且在该软磁体的外表面上形成反铁磁层。 此外，磁阻元件设置在线的附近。 假设在软磁体与反铁磁体层之间的界面处的交换耦合能为J（erg / cm 2）的情况下，软磁体的饱和磁化强度为Ms（emu / cc），软磁体的矫顽力为Hc（Oe）。 然后，软磁体的厚度t（cm）被选择为使得t

公开(公告)号：US08492809B2

公开(公告)日：2013-07-23

申请号：US13216965

申请日：2011-08-24

申请人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Kiyoshi Noguchi ,  Toshio Suzuki

发明人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Kiyoshi Noguchi ,  Toshio Suzuki

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  G11C11/161 ,  G11C11/1675 ,  H01L29/82

摘要： The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed on a first part of the silicon channel layer 12, and a first ferromagnetic layer 14A disposed on the first magnesium oxide film 13A. The first magnesium oxide film 13A partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.

摘要翻译： 本发明提供一种自旋注入电极结构，自旋传输元件和自旋传输器件，其能够在室温下在硅沟道层中有效地自旋注入。 自旋注入电极结构IE包括硅沟道层12，设置在硅沟道层12的第一部分上的第一氧化镁膜13A和设置在第一氧化镁膜13A上的第一铁磁层14A。 第一氧化镁膜13A部分地包括与硅沟道层12和第一铁磁层14A两者晶格匹配的第一晶格匹配部分P.

公开(公告)号：US20120211848A1

公开(公告)日：2012-08-23

申请号：US13396062

申请日：2012-02-14

申请人： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

发明人： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

IPC分类号： H01L43/02

CPC分类号： H01L43/10 ,  H01L43/08 ,  H01L43/12

摘要： The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.

摘要翻译： 磁传感器包括具有磁屏蔽层的基底基板; 通过绝缘膜附着在基底基板的磁屏蔽层上的单畴半导体晶体层; 经由第一隧道势垒层在所述半导体晶体层的与所述绝缘膜相对的所述半导体晶体层的顶部上形成的第一铁磁层; 以及第二铁磁层，其经由第二隧道势垒层与半导体晶体层的与绝缘膜相隔一定距离的第一铁磁层一定距离形成。

公开(公告)号：US20120074510A1

公开(公告)日：2012-03-29

申请号：US13227135

申请日：2011-09-07

申请人： Tomoyuki SASAKI ,  Tohru OIKAWA

发明人： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  G01R33/093 ,  G11B5/332 ,  H01L43/08

摘要： A magnetic sensor 1 comprises a main channel layer 7a having first, second, and third regions 71, 72, 73 and extending in a first direction; a first ferromagnetic layer 12A mounted on the first region 71; a second ferromagnetic layer 12B mounted on the second region 72; a projection channel layer 7b projecting in a direction perpendicular to a thickness direction of the main channel layer 7a from a side face of the third region 73 between the first and second regions 71, 72 in the main channel layer 7a; and a magnetic shield S covering both sides in the thickness direction of the projection channel layer 7b and both sides in the first direction of the projection channel layer 7b and exposing an end face 7c in the projecting direction of the projection channel layer 7b.

摘要翻译： 磁传感器1包括具有第一，第二和第三区域71,72,73并沿第一方向延伸的主通道层7a; 安装在第一区域71上的第一铁磁层12A; 安装在第二区域72上的第二铁磁层12B; 在主沟道层7a中的第一和第二区域71,72之间从第三区域73的侧面垂直于主沟道层7a的厚度方向的方向突出的投影通道层7b; 以及覆盖投影通道层7b的厚度方向的两侧和投影通道层7b的第一方向上的两侧的磁屏蔽S，并且在投影通道层7b的突出方向上露出端面7c。

公开(公告)号：US20100327333A1

公开(公告)日：2010-12-30

申请号：US12821466

申请日：2010-06-23

申请人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

发明人： Tomoyuki Sasaki ,  Tohru Oikawa ,  Katsumichi Tagami

IPC分类号： H01L29/82

CPC分类号： H01L27/22 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254

摘要： A spin transport device which comprises a channel, first and second insulating layers, a magnetization fixed layer, a magnetization free layer, first and second wirings, and satisfies at least one of following conditions A and B, Condition A: The first wiring includes a vertical portion which extends in a thickness direction of the magnetization fixed layer on the magnetization fixed layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization fixed layer side in a direction crossing the thickness direction of the magnetization fixed layer, and Condition B: The second wiring includes a vertical portion which extends in a thickness direction of the magnetization free layer on the magnetization free layer, and a horizontal portion which extends from the vertical portion that is apart from the magnetization free layer side in a direction crossing the thickness direction of the magnetization free layer.

摘要翻译： 一种自旋传输装置，包括通道，第一和第二绝缘层，磁化固定层，磁化自由层，第一和第二布线，并且满足以下条件A和B中的至少一个条件A：第一布线包括 在磁化固定层的磁化固定层的厚度方向上延伸的垂直部分和从与磁化固定层侧分离的垂直部分在与磁化固定层的厚度方向交叉的方向上延伸的水平部分 和条件B：第二布线包括在磁化自由层上的磁化自由层的厚度方向上延伸的垂直部分和从远离磁化自由层侧的垂直部分延伸的水平部分 方向与磁化自由层的厚度方向交叉。

公开(公告)号：US07826254B2

公开(公告)日：2010-11-02

申请号：US11810835

申请日：2007-06-06

申请人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

发明人： Susumu Haratani ,  Tohru Oikawa ,  Takashi Asatani

IPC分类号： G11C11/00

CPC分类号： H01L27/226 ,  G11C11/16 ,  H01L43/08

摘要： In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t

摘要翻译： 在磁存储装置中，写入周期期间的磁化特性被均匀化，并且有效地执行写入周期。 在磁存储装置中，软磁体被形成为完全或部分地覆盖线，并且在该软磁体的外表面上形成反铁磁层。 此外，磁阻元件设置在线的附近。 假设在软磁体与反铁磁层之间的界面处的交换耦合能为J（erg / cm2）的情况下，软磁体的饱和磁化强度为Ms（emu / cc），矫顽力为 的软磁体是Hc（Oe）。 然后，软磁体的厚度t（cm）被选择为使得t

公开(公告)号：US07649766B2

公开(公告)日：2010-01-19

申请号：US12002253

申请日：2007-12-14

申请人： Keiji Koga ,  Katsumichi Tagami ,  Tohru Oikawa

发明人： Keiji Koga ,  Katsumichi Tagami ,  Tohru Oikawa

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic storage device with a significant reduction in power consumption. The magnetic storage device includes: a yoke which is arranged to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged in contact with the yoke, thereby forming a closed magnetic circuit. The magneto-resistive element is capable of writing information with a field emanating from the yoke. The magnetic storage device satisfies Iw≦a·R, where R is the magnetoresistance of the yoke, Iw is the write current necessary for the line, and a (mA·H)=6E−11.

摘要翻译： 具有显着降低功耗的磁存储装置。 磁存储装置包括：轭，被布置成覆盖沿任意方向延伸的线的一部分; 和与磁轭接触的磁阻元件，从而形成闭合磁路。 磁阻元件能够用从磁轭发出的磁场来写入信息。 磁存储器件满足Iw <= a.R，其中R是磁轭的磁阻，Iw是线所需的写入电流，a（mA.H）= 6E-11。