公开(公告)号：US5879569A

公开(公告)日：1999-03-09

申请号：US677960

申请日：1996-07-10

申请人： Hiroshi Matsumoto ,  Hiroshi Yashiki ,  Yoichi Inomata ,  Tatsuya Yoneda ,  Kazuhiko Tsutsumi ,  Noriyuki Shige ,  Tokuho Takagaki

发明人： Hiroshi Matsumoto ,  Hiroshi Yashiki ,  Yoichi Inomata ,  Tatsuya Yoneda ,  Kazuhiko Tsutsumi ,  Noriyuki Shige ,  Tokuho Takagaki

IPC分类号： G11B5/82 ,  G11B5/84 ,  B44C1/22

CPC分类号： G11B5/8408 ,  G11B5/82

摘要： To provide a magnetic disk excellent in floating and sliding characteristics in a low floating area. A magnetic disk having a feature that variations in the height of the projections on each surface of protective films in floating ensured areas on both sides of the magnetic disk are .+-.15%, and a magnetic disk device on which the magnetic disk is mounted. A surface processing apparatus for a magnetic disk, including: a first electrode for fixing the magnetic disk, the first electrode having an inside diameter larger than the inside diameter of the non-magnetic substrate; an electrically grounded shield for shielding the first electrode; a second electrode, disposed in parallel to the surface of the magnetic disk, for generating plasma against the surface of the magnetic disk; and a plasma control member, disposed at a position separated from the outer edge of the magnetic disk by a specified distance, for controlling plasma generated against the surface of the magnetic disk; wherein a power is applied between the first and second electrodes for plasma-etching the surface of the magnetic disk.

摘要翻译： 提供在低浮动区域中浮动和滑动特性优异的磁盘。 具有这样的特征的磁盘，其特征在于，在磁盘两侧的浮动确保区域中的保护膜的每个表面上的突起的高度变化为+/- 15％，以及安装有磁盘的磁盘装置 。 一种用于磁盘的表面处理装置，包括：用于固定磁盘的第一电极，第一电极的内径大于非磁性基板的内径; 用于屏蔽第一电极的电接地屏蔽; 第二电极，平行于磁盘的表面设置，用于产生等离子体抵靠磁盘的表面; 以及等离子体控制构件，设置在与磁盘的外边缘分开一定距离的位置，用于控制对磁盘表面产生的等离子体; 其中在所述第一和第二电极之间施加电力以等离子体刻蚀所述磁盘的表面。

公开(公告)号：US5736235A

公开(公告)日：1998-04-07

申请号：US740708

申请日：1991-08-06

申请人： Yoshibumi Matsuda ,  Masaaki Futamoto ,  Yoshinori Miyamura ,  Tokuho Takagaki ,  Hisashi Takano ,  Fumio Kugiya ,  Takeshi Nakao ,  Kyo Akagi ,  Mikio Suzuki ,  Hirotsugu Fukuoka ,  Takayuki Munemoto

发明人： Yoshibumi Matsuda ,  Masaaki Futamoto ,  Yoshinori Miyamura ,  Tokuho Takagaki ,  Hisashi Takano ,  Fumio Kugiya ,  Takeshi Nakao ,  Kyo Akagi ,  Mikio Suzuki ,  Hirotsugu Fukuoka ,  Takayuki Munemoto

IPC分类号： G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/73 ,  G11B5/738 ,  G11B5/85 ,  G11B5/851

CPC分类号： G11B5/66 ,  G11B5/64 ,  Y10S428/90 ,  Y10T428/24942 ,  Y10T428/2495

摘要： A magnetic recording medium, its fabrication method, and a magnetic recording apparatus in which both saturation induction and coercive force of a magnetic film is made high as they are near a surface of the recording medium. A high density information recording can be made higher than 50 kFCI in linear recording density even for spacing around 0.2 .mu.m.

摘要翻译： 一种磁记录介质，其制造方法和磁记录装置，其中磁记录介质的表面附近磁饱和感应和磁性膜的矫顽力均较高。 即使对于0.2μm左右的间隔，高密度信息记录也可以使线性记录密度高于50kFCI。

公开(公告)号：US20060152862A1

公开(公告)日：2006-07-13

申请号：US11371244

申请日：2006-03-09

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 从而电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US07054120B2

公开(公告)日：2006-05-30

申请号：US10700500

申请日：2003-11-05

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06278593B1

公开(公告)日：2001-08-21

申请号：US09468309

申请日：1999-12-21

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5587235A

公开(公告)日：1996-12-24

申请号：US193376

申请日：1994-02-08

申请人： Hiroyuki Suzuki ,  Naoki Kodama ,  Takao Yonekawa ,  Tokuho Takagaki ,  Naoto Endo ,  Katsuo Abe ,  Tsuneo Suganuma

发明人： Hiroyuki Suzuki ,  Naoki Kodama ,  Takao Yonekawa ,  Tokuho Takagaki ,  Naoto Endo ,  Katsuo Abe ,  Tsuneo Suganuma

IPC分类号： G11B5/66 ,  B32B5/16

CPC分类号： G11B5/66 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/26 ,  Y10T428/265

摘要： A magnetic recording medium and magnetic recording apparatus which can provide a high output level and a low noise level are disclosed. A magnetic recording medium includes a multilayer structure of magnetic alloy thin films containing Co, and at least one paramagnetic intermediate region or oxygen-rich region disposed between the magnetic layers. The intermediate region reduces the magnetic interaction between the magnetic layers without the degradation of crystallinity of the magnetic layers. As a result, a magnetic recording medium having such a structure shows low noise performance and a high recording density.

摘要翻译： 公开了一种能够提供高输出电平和低噪声电平的磁记录介质和磁记录装置。 磁记录介质包括含有Co的磁性合金薄膜的多层结构，以及设置在磁性层之间的至少一个顺磁中间区或富氧区。 中间区域减小磁性层之间的磁相互作用，而不会降低磁性层的结晶度。 结果，具有这种结构的磁记录介质显示出低噪声性能和高记录密度。

公开(公告)号：US5325244A

公开(公告)日：1994-06-28

申请号：US843265

申请日：1992-02-28

申请人： Hisashi Takano ,  Kyo Akagi ,  Mikio Suzuki ,  Yoshibumi Matsuda ,  Takeshi Nakao ,  Yoshinori Miyamura ,  Fumio Kugiya ,  Masaaki Futamoto ,  Hideki Sawaguchi ,  Nobuyuki Inaba ,  Takayuki Munemoto ,  Kenji Mori ,  Hirotsugu Fukuoka ,  Tokuho Takagaki

发明人： Hisashi Takano ,  Kyo Akagi ,  Mikio Suzuki ,  Yoshibumi Matsuda ,  Takeshi Nakao ,  Yoshinori Miyamura ,  Fumio Kugiya ,  Masaaki Futamoto ,  Hideki Sawaguchi ,  Nobuyuki Inaba ,  Takayuki Munemoto ,  Kenji Mori ,  Hirotsugu Fukuoka ,  Tokuho Takagaki

IPC分类号： G11B5/02 ,  G11B5/00 ,  G11B5/39 ,  G11B5/55 ,  G11B5/596 ,  G11B5/60 ,  G11B5/65 ,  G11B5/66 ,  G11B5/74 ,  G11B5/82 ,  G11B13/04 ,  G11B21/10 ,  G11B5/58

CPC分类号： G11B5/3967 ,  G11B5/00 ,  G11B5/5552 ,  G11B5/59677 ,  G11B5/6005 ,  G11B5/74

摘要： A magnetic recording data storage system includes a magnetic recording medium having pits formed therein, the pits defining recording tracks on the magnetic recording medium and being arranged in a staggered manner relative to respective center lines of the recording tracks, a magnetic head including an inductive element for recording data on the recording tracks and a magnetoresistive element for reproducing data from the recording tracks, one of (1) a unit for magnetically producing a signal from the pits, and (2) an optical unit for optically producing a signal from the pits, the optical unit including a laser for illuminating the pits, servo means for positioning the head on the recording tracks based on the signal produced from the pits, the servo means including a dual-stage actuator including a rough movement portion and a fine movement portion.

摘要翻译： 磁记录数据存储系统包括其中形成有凹坑的磁记录介质，凹坑在磁记录介质上定义记录轨道并相对于记录轨道的相应中心线以交错方式布置，磁头包括电感元件 用于在记录磁道上记录数据和用于从记录磁道再现数据的磁阻元件，（1）用于从凹坑中产生信号的单元，以及（2）用于光学地产生来自凹坑的信号的光学单元 所述光学单元包括用于照亮所述凹坑的激光器，用于基于由所述凹坑产生的信号将所述磁头定位在所述记录磁道上的伺服装置，所述伺服装置包括双级致动器，所述双级致动器包括粗略运动部分和精细运动部分 。

公开(公告)号：US4950548A

公开(公告)日：1990-08-21

申请号：US355351

申请日：1989-05-23

申请人： Kenji Furusawa ,  Katsuo Abe ,  Hiroyuki Kataoka ,  Tokuho Takagaki ,  Yoshihiro Shiroishi ,  Norikazu Tsumita

发明人： Kenji Furusawa ,  Katsuo Abe ,  Hiroyuki Kataoka ,  Tokuho Takagaki ,  Yoshihiro Shiroishi ,  Norikazu Tsumita

IPC分类号： G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B5/667 ,  G11B5/72 ,  G11B5/73 ,  G11B5/738 ,  G11B5/851

CPC分类号： G11B5/656 ,  G11B5/72 ,  G11B5/738 ,  G11B5/851 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12625 ,  Y10T428/12639 ,  Y10T428/12847 ,  Y10T428/12861 ,  Y10T428/12931

摘要： The present invention relates to a magnetic recording medium for a magnetic disk unit or the like and, more particularly, to a magnetic recording medium having its recording layer made of a magnetic alloy film with uniform magnetic characteristics. The present magnetic recording medium comprises a non-magnetic substrate, at least two sputtered layers of chromium thin film having a bow-like columnar structure which chromium thin film is laminated on the substrate, another sputtered layer of a magnetic alloy thin film laminated on the chromium thin film, and a protective layer laminated on the magnetic alloy thin film. The present invention is effective in reducing modulation of regenerative output relatively independent of a texture roughness of the substrate.

摘要翻译： 本发明涉及一种用于磁盘单元等的磁记录介质，更具体地说，涉及一种具有由具有均匀磁特性的磁性合金膜制成的记录层的磁记录介质。 本磁记录介质包括非磁性基板，至少两个具有弓形柱状结构的铬薄膜溅射层，该铬薄膜层叠在基板上，另一层叠在该基板上的磁性合金薄膜溅射层 铬薄膜和层叠在磁性合金薄膜上的保护层。 本发明可有效地减少再生输出的调制，而不依赖于衬底的纹理粗糙度。

公开(公告)号：US07159303B2

公开(公告)日：2007-01-09

申请号：US11371244

申请日：2006-03-09

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US06687099B2

公开(公告)日：2004-02-03

申请号：US10270120

申请日：2002-10-15

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G11B539

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。