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1.发明授权
公开(公告)号：US5326745A
公开(公告)日：1994-07-05
申请号：US853593
申请日：1992-03-17
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译： 超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。
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公开(公告)号：US4365155A
公开(公告)日：1982-12-21
申请号：US132132
申请日：1980-03-20
申请人： Tetsu Oi , Kazumasa Takagi , Tokuumi Fukazawa
发明人： Tetsu Oi , Kazumasa Takagi , Tokuumi Fukazawa
IPC分类号： C01G41/00 , C09K11/68 , C30B13/00 , C30B15/00 , C30B15/04 , C30B29/32 , G01T1/202 , G21K4/00 , C09K11/12
CPC分类号： G21K4/00 , C09K11/68 , C30B13/00 , C30B15/00 , C30B29/32 , G01T1/2023 , Y10T428/31
摘要： A scintillator formed of a ZnWO.sub.4 single crystal having an absorption coefficient less than or equal to 1.8 cm.sup.-1 for the light having a wavelength of 520 nm is disclosed which has a luminescence wavelength of 480 nm and therefore can be combined with a photodiode, and which is high in radiation detection sensitivity, short in decay time, and specifically suitable for use in computed tomography.
摘要翻译： 公开了一种具有波长为520nm的光的具有小于或等于1.8cm -1的吸收系数的ZnWO 4单晶的闪烁体，其具有480nm的发光波长，因此可以与光电二极管组合，并且 辐射检测灵敏度高，衰减时间短，特别适用于计算机断层摄影。
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公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译： 超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。 构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。 选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜 另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。
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4.发明授权
公开(公告)号：US5096882A
公开(公告)日：1992-03-17
申请号：US178905
申请日：1988-04-07
申请人： Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
发明人： Takahiko Kato , Katsuzo Aihara , Jiro Kuniya , Yutaka Misawa , Yoshihide Wadayama , Masahiro Ogihara , Toshikazu Nishino , Ushio Kawabe , Haruhiro Hasegawa , Kazumasa Takagi , Tokuumi Fukazawa , Katsuki Miyauchi
IPC分类号： C01G3/00 , C01B13/14 , C01G1/00 , C04B35/00 , C04B35/45 , C04B41/80 , H01B12/00 , H01B13/00 , H01F6/06 , H01F41/04 , H01L39/12 , H01L39/14 , H01L39/24
CPC分类号： H01L39/2464 , H01F41/048 , H01F6/06 , H01L39/143 , H01L39/249 , H01L39/2496 , Y10S505/725 , Y10S505/73
摘要： A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.
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5.发明授权Method of forming weak-link Josephson junction, and superconducting device employing the junction 失效形成弱连接JOSEPHSON JUNCTION的方法和使用连接的超级设备
公开(公告)号：US5077266A
公开(公告)日：1991-12-31
申请号：US405737
申请日：1989-09-11
申请人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
发明人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/729 , Y10T29/41
摘要： A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.
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公开(公告)号：US4691983A
公开(公告)日：1987-09-08
申请号：US660144
申请日：1984-10-12
CPC分类号： G02F1/0955 , H01S3/0064 , H01S5/026 , H01S5/0064
摘要： Optical waveguide and the method for making the same, in which a semiconductor laser diode and an optical isolator are formed on one substrate in a monolithic manner. At the moment, a semiconductor laser diode is made by a III-V compound semiconductor crystal, such as GaAs, InP, etc., and an optical isolator is made of iron garnet to fabricate these in monolithic, and this invention was established by developing the technology to monocrystallize at least a small part of the garnet film containing no iron which is deposited on the semiconductor substrate and to use this as the seed crystal for the said phase epitaxial growth of the iron garnet film which forms the iron garnet optical waveguide.
摘要翻译： 光波导及其制造方法，其中半导体激光二极管和光隔离器以单片方式形成在一个基板上。 此时，半导体激光二极管由GaAs，InP等III-V族化合物半导体晶体制成，光隔离器由铁石榴石制成，以单片制造，本发明是通过开发 将沉积在半导体衬底上的不含铁的石榴石薄膜的至少一部分单晶化并将其用作形成铁石榴石光波导的铁石榴石膜的所述相外延生长的晶种的技术。
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7.发明授权
公开(公告)号：US5316585A
公开(公告)日：1994-05-31
申请号：US560844
申请日：1990-07-24
申请人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
发明人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
CPC分类号： C23C14/0036 , C23C14/0031 , C23C14/087 , C23C14/32 , C23C16/408 , C23C16/517 , C23C4/11 , H01L39/2422 , H01L39/2445 , H01L39/2451 , Y10S505/73 , Y10S505/732 , Y10S505/786
摘要： Chemical reactions of superconducting raw materials with active oxygen atoms and their charged particles are accelerated by using at least oxygen plasma in the fabrication process of a superconductive body. Thereby an ionic crystal is grown in a short time, which provides stable superconducting materials of high quality such as high critical temperature and low resistivity. In another aspect, a substrate is irradiated simultaneously with streams of vapor of metal elements, of which a superconductive body is to be composed, and a stream of gas of ions generated in a plasma chamber and film growth is effected while keeping the substrate at a temperature higher than 400.degree. C. to produce a ceramic type superconductive thin film.
摘要翻译： 具有活性氧原子的超导原料及其带电粒子的化学反应通过在超导体的制造过程中至少使用氧等离子体来加速。 因此，离子晶体在短时间内生长，其提供高质量的稳定的超导材料，例如高临界温度和低电阻率。 在另一方面，一种衬底被同时照射要形成超导体的金属元素的蒸汽流，并且在将衬底保持在一个等离子体室的同时实现在等离子体室中产生的离子气流和膜生长 温度高于400℃，生成陶瓷型超导薄膜。
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8.发明授权Method for fabricating superconducting oxide thin films by activated reactive evaporation 失效通过活性反应蒸发制造超导氧化物薄膜的方法
公开(公告)号：US4950642A
公开(公告)日：1990-08-21
申请号：US228750
申请日：1988-08-05
申请人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
发明人： Yukio Okamoto , Toshiyuki Aida , Katsuki Miyauchi , Kazumasa Takagi , Tokuumi Fukazawa , Shinji Takayama
CPC分类号： C23C14/0036 , C23C14/0031 , C23C14/087 , C23C14/32 , C23C16/408 , C23C16/517 , C23C4/11 , H01L39/2422 , H01L39/2445 , H01L39/2451 , Y10S505/73 , Y10S505/732 , Y10S505/786
摘要： A process for fabricating a superconducting oxide thin film is disclosed which comprises the steps of separately evaporating metal elements, of which the superconducting oxide thin film with a desired stoichiometry is to be composed, to a substrate and simultaneously irradiating the substrate with oxygen plasma generated by RF wave or ECR microwave to form a crystalline oxide film without further annealing.
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公开(公告)号：US4921834A
公开(公告)日：1990-05-01
申请号：US149557
申请日：1988-01-28
申请人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
发明人： Haruhiro Hasegawa , Ushio Kawabe , Yoshinobu Tarutani , Tokuumi Fukazawa , Toshiyuki Aida , Kazumasa Takagi
CPC分类号： H01L39/2419 , C04B35/4504 , H01L39/126 , Y10S505/729
摘要： An oxide-superconductor improved so as to have a high critical temperature (T.sub.c) comprises an oxide having a K.sub.2 NiF.sub.4 crystalline structure similar to a perovskite crystalline structure and represented by the following formula:(Ba.sub.x Sr.sub.z La.sub.1-x-z).sub.2 Cu.sub.1-w Ag.sub.w O.sub.4(1-y)wherein 0.1
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公开(公告)号：US4647781A
公开(公告)日：1987-03-03
申请号：US787076
申请日：1985-10-15
申请人： Kazumasa Takagi , Tokuumi Fukazawa
发明人： Kazumasa Takagi , Tokuumi Fukazawa
CPC分类号： G01T1/2985 , G01T1/2002 , G01T1/202
摘要： A gamma ray detector suitable for use in a positron CT and others is disclosed which comprises a scintillator formed of a single crystal of cerium activated gadolinium silicate which is expressed by a general formula Gd.sub.2(1-x-y) Ln.sub.2x Ce.sub.2y SiO.sub.5 (where Ln indicates at least one element selected from a group consisting of yttrium and lanthanum, and x and y lie in ranges given by formulae 0.ltoreq.x.ltoreq.0.5 and 1.times.10.sup.-3 .ltoreq.y.ltoreq.0.1).
摘要翻译： 公开了适用于正电子CT等的γ射线检测器，其包括由通式Gd 2（1-xy）Ln 2 x C e 2 y SiO 5表示的铈活化钆硅酸盐单晶形成的闪烁体（其中Ln表示至少一个 选自钇和镧的元素，x和y位于由式0
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