公开(公告)号：US20130126907A1

公开(公告)日：2013-05-23

申请号：US13704963

申请日：2011-11-25

申请人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

发明人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

IPC分类号： H01L29/16 ,  H01L21/02

CPC分类号： H01L29/1608 ,  H01L21/02107 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长 掩模层40上的III族氮化物半导体层10。

公开(公告)号：US07947387B2

公开(公告)日：2011-05-24

申请号：US12793818

申请日：2010-06-04

申请人： Mitsunobu Saito ,  Morio Kayano ,  Tomohiko Maeda ,  Hiroshi Murakami ,  Kazushi Ota

发明人： Mitsunobu Saito ,  Morio Kayano ,  Tomohiko Maeda ,  Hiroshi Murakami ,  Kazushi Ota

IPC分类号： H01M10/50

CPC分类号： H01M10/482 ,  B60L1/003 ,  B60L3/0046 ,  B60L11/1874 ,  B60L2210/10 ,  B60L2240/525 ,  B60L2260/56 ,  H01M10/345 ,  H01M10/486 ,  H01M10/613 ,  H01M10/617 ,  H01M10/625 ,  H01M10/633 ,  H01M10/6563 ,  H01M10/667 ,  H02J7/0091 ,  Y02E60/124 ,  Y02T10/7005 ,  Y02T10/7216

摘要： In an ECU, a coolant fan performs cooling operation such that a control DUTY value is limited by a control DUTY value according to tolerable noise level of the cooling fan based on a vehicle speed in a case in which the temperature in the high-voltage battery is lower than a predetermined limitation for highest temperature. In a case in which the temperature in the high-voltage battery is higher than the predetermined limitation for highest temperature, the cooling fan performs the cooling operation by using an energy storage device cooling operation requirement value and an IPU cooling operation requirement value such that performance in the high-voltage battery is not affected. By doing this, a temperature controlling apparatus for batteries in which it is possible to cool the battery and solve temperature difference among a plurality of batteries can be provided.

摘要翻译： 在ECU中，冷却风扇进行制冷运转，使得在高压电池中的温度的情况下，根据车速，根据冷却风扇的容许噪声水平，控制DUTY值受到控制DUTY值的限制 低于最高温度的预定限制。 在高压电池的温度高于最高温度的预定限制的情况下，冷却风扇通过使用储能装置制冷运转要求值和IPU制冷运转要求值进行制冷运转，使得性能 在高压电池中不受影响。 通过这样做，可以提供一种其中可以冷却电池并解决多个电池之间的温度差的电池的温度控制装置。

公开(公告)号：US20080218349A1

公开(公告)日：2008-09-11

申请号：US12074057

申请日：2008-02-29

申请人： Tomohiko Maeda ,  Kazuo Sato ,  Yoshitaka Muraoka ,  Hidehiko Fuchida ,  Shuko Saito

发明人： Tomohiko Maeda ,  Kazuo Sato ,  Yoshitaka Muraoka ,  Hidehiko Fuchida ,  Shuko Saito

IPC分类号： G08B13/14 ,  H04Q5/22

CPC分类号： G05B19/4183 ,  G05B2219/31296 ,  G05B2219/31322 ,  Y02P90/10

摘要： In an RFID system comprising a detection unit for detecting an RFID tag and a control unit for exercising the control concerning the RFID tag, a determination unit determines whether to access a second area of an RFID tag comprising storage area, comprising of a first area for storing ID information and the second area for storing command information. An extraction unit extracts command information from the second area when it is determined to access the second area. An execution unit performs a process corresponding to the command information extracted by the extraction unit.

摘要翻译： 在包括用于检测RFID标签的检测单元和用于执行关于RFID标签的控制的控制单元的RFID系统中，确定单元确定是否访问包括存储区域的RFID标签的第二区域，所述RFID标签包括第一区域， 存储ID信息和用于存储命令信息的第二区域。 当确定访问第二区域时，提取单元从第二区域提取命令信息。 执行单元执行与由提取单元提取的命令信息相对应的处理。

公开(公告)号：US20050097012A1

公开(公告)日：2005-05-05

申请号：US10977939

申请日：2004-11-01

申请人： Tomohiko Maeda

发明人： Tomohiko Maeda

IPC分类号： G05B19/418 ,  G06Q50/00 ,  G06Q50/04 ,  G06F17/60

CPC分类号： G06Q10/087 ,  G06Q10/06 ,  Y02P90/20

摘要： A production planning apparatus in a production line which conducts production in each process includes an on-line push/pull type production planning device, an off-line system control device and memory connected to the push/pull type production planning device and the system control device, for storing a variety of information. The push/pull type production planning device determines the behavior of a target process based on the amount of requirements from a post-process, the predetermined amount of products in progress and the achieved amount of products in progress; and the system control device optimizes parameters.

摘要翻译： 在每个处理中进行生产的生产线中的生产计划装置包括在线推/拉式生产计划装置，离线系统控制装置和连接到推/拉式生产计划装置和系统控制的存储器 设备，用于存储各种信息。 推/拉式生产计划装置基于来自后处理的需求量，正在进行的预定量的产品和所实现的产品数量来确定目标过程的行为; 系统控制装置优化参数。

公开(公告)号：US06255826B1

公开(公告)日：2001-07-03

申请号：US09688383

申请日：2000-10-17

申请人： Naoki Ohsawa ,  Takafumi Tsurumi ,  Tomohiko Maeda

发明人： Naoki Ohsawa ,  Takafumi Tsurumi ,  Tomohiko Maeda

IPC分类号： G01N27416

CPC分类号： B60K6/28 ,  B60K6/48 ,  B60L11/1853 ,  B60L2240/547 ,  G01R31/026 ,  G01R31/3658 ,  H02J7/0021 ,  H02J7/0047 ,  H02J2007/005 ,  Y02T10/6221 ,  Y02T10/7005 ,  Y02T10/705 ,  Y02T10/7055 ,  Y10S903/903 ,  Y10S903/907

摘要： The present invention provides a battery voltage measuring device capable of immediately detecting a breakage in the voltage measuring line in a battery voltage measuring device that detects the battery voltage. In blocks formed by connecting a plurality of secondary batteries in series, voltage sensors that detect the voltage of each block are respectively provided. In addition, before these voltage sensors noise filters are provided, and in addition, a measuring line breakage detecting resistor for detecting a breakage in the voltage measuring line is connected in parallel to each block. In a battery voltage measuring device having this type of structure, in the case that the voltage measuring line Q is broken, the voltage values V1 and V2 detected by the voltage sensors 20-1 and 20-2 become voltage values that accompany the resistance ratio of the measuring line breakage detecting resistors 60-1 and 60-2. Thereby, the voltage sensor detects a voltage that is not normally detected, and as a result, it becomes possible to immediately detect the breakage in the voltage measuring line.

摘要翻译： 本发明提供一种电池电压测量装置，能够立即检测检测电池电压的电池电压测量装置中的电压测量线的断线。 在通过串联连接多个二次电池形成的块中，分别提供检测每个块的电压的电压传感器。 此外，在提供这些电压传感器噪声滤波器之前，此外，用于检测电压测量线中的断线的测量线断裂检测电阻器与每个块并联连接。 在具有这种结构的电池电压测量装置中，在电压测量线Q断开的情况下，由电压传感器20-1和20-2检测的电压值V1和V2成为伴随电阻比的电压值 的测量线断裂检测电阻器60-1和60-2。 由此，电压传感器检测出不正常检测的电压，结果，可以立即检测电压测量线路的断线。

公开(公告)号：US09142619B2

公开(公告)日：2015-09-22

申请号：US13704963

申请日：2011-11-25

申请人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

发明人： Tsukasa Kitano ,  Koichi Naniwae ,  Masayoshi Koike ,  Fumiharu Teramae ,  Toshiyuki Kondo ,  Atsushi Suzuki ,  Tomohiko Maeda ,  Midori Mori

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32

CPC分类号： H01L29/1608 ,  H01L21/02107 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced.[Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

摘要翻译： [问题]提供可以精确地减少半导体层中的位错密度的III族氮化物半导体器件及其制造方法。 [解决方案]在制造III族氮化物半导体器件1中，在衬底20上形成掩模层40，然后通过掩模层40的图案44选择性地生长由III族氮化物半导体制成的纳米柱50，以生长 掩模层40上的III族氮化物半导体层10。

公开(公告)号：US08597475B2

公开(公告)日：2013-12-03

申请号：US11101548

申请日：2005-04-08

申请人： Kazuaki Sasa ,  Kazunori Kawamura ,  Keiko Toyozawa ,  Tomohiko Maeda

发明人： Kazuaki Sasa ,  Kazunori Kawamura ,  Keiko Toyozawa ,  Tomohiko Maeda

IPC分类号： C23C14/00 ,  C23C14/32

CPC分类号： C23C14/086 ,  Y10S428/923 ,  Y10S428/926 ,  Y10T428/26 ,  Y10T428/265

摘要： A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm2/V·S, and a carrier density of from 2×1020/cm3 to 6×1020/cm3.

摘要翻译： 在包含有机聚合物成型体的基材上具有完全结晶的透明导电层的透明导电层压体及其制造方法。 透明导电层的透明性和湿热可靠性优异，并且电阻率不会过低。 透明导电性层叠体包括具有形成有完全结晶化的透明导电层的有机聚合物成型体的基材，该透明导电层包含相对于In原子总重量，Sn原子量为1〜6重量％的In.Sn复合氧化物 和Sn原子，膜厚度为15〜50nm，霍尔迁移率为30〜45cm2 / V·S，载流子密度为2×1020 / cm3〜6×1020 / cm3。

公开(公告)号：US06908666B2

公开(公告)日：2005-06-21

申请号：US10407421

申请日：2003-04-07

申请人： Kazuaki Sasa ,  Kazunori Kawamura ,  Keiko Toyozawa ,  Tomohiko Maeda

发明人： Kazuaki Sasa ,  Kazunori Kawamura ,  Keiko Toyozawa ,  Tomohiko Maeda

IPC分类号： B32B7/02 ,  B32B9/00 ,  C23C14/08 ,  H01B5/14 ,  H01B13/00 ,  B32B19/00 ,  B32B5/00

CPC分类号： C23C14/086 ,  Y10S428/923 ,  Y10S428/926 ,  Y10T428/26 ,  Y10T428/265

摘要： A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In—Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm2/V-S, and a carrier density of from 2×1020/cm3 to 6×1020/cm3.

摘要翻译： 在包含有机聚合物成型体的基材上具有完全结晶的透明导电层的透明导电层压体及其制造方法。 透明导电层的透明性和湿热可靠性优异，并且电阻率不会过低。 透明导电性层叠体包括具有形成有完全结晶的透明导电层的有机聚合物成型体的基板，该透明导电层包含Sn原子占In原子总重量的1〜6重量％的In-Sn复合氧化物 和Sn原子，并且具有15至50nm的膜厚度，30至45cm 2 / Vs的霍尔迁移率和2×10 20 / cm的载流子密度 3×3×6×10 20 / cm 3以上。

公开(公告)号：US08274367B2

公开(公告)日：2012-09-25

申请号：US12074057

申请日：2008-02-29

申请人： Tomohiko Maeda ,  Kazuo Sato ,  Yoshitaka Muraoka ,  Hidehiko Fuchida ,  Shuko Saito

发明人： Tomohiko Maeda ,  Kazuo Sato ,  Yoshitaka Muraoka ,  Hidehiko Fuchida ,  Shuko Saito

IPC分类号： H04Q5/22

CPC分类号： G05B19/4183 ,  G05B2219/31296 ,  G05B2219/31322 ,  Y02P90/10

摘要： In an RFID system comprising a detection unit for detecting an RFID tag and a control unit for exercising the control concerning the RFID tag, a determination unit determines whether to access a second area of an RFID tag comprising storage area, comprising of a first area for storing ID information and the second area for storing command information. An extraction unit extracts command information from the second area when it is determined to access the second area. An execution unit performs a process corresponding to the command information extracted by the extraction unit.

摘要翻译： 在包括用于检测RFID标签的检测单元和用于执行关于RFID标签的控制的控制单元的RFID系统中，确定单元确定是否访问包括存储区域的RFID标签的第二区域，所述RFID标签包括第一区域， 存储ID信息和用于存储命令信息的第二区域。 当确定访问第二区域时，提取单元从第二区域提取命令信息。 执行单元执行与由提取单元提取的命令信息相对应的处理。

公开(公告)号：US07661598B2

公开(公告)日：2010-02-16

申请号：US11864746

申请日：2007-09-28

申请人： Yoshitaka Muraoka ,  Tomohiko Maeda ,  Kazuo Sato ,  Hidehiko Fuchida ,  Shuko Saito

发明人： Yoshitaka Muraoka ,  Tomohiko Maeda ,  Kazuo Sato ,  Hidehiko Fuchida ,  Shuko Saito

IPC分类号： G06K7/00

CPC分类号： G09F3/08

摘要： In a mechanism for attaching to a cart an RFID tag used for transmitting and receiving data to and from an RFID reader/writer, a holding pocket retains the RFID tag. The orientation of the pocket is kept constant in such a manner that a surface of the RFID tag from which data can be read highly accurately faces an antenna for the RFID reader/writer while keeping the distance between the RFID tag and the antenna within a certain range regardless of the transfer direction of the cart.

摘要翻译： 在用于将RFID标签用于向RFID读取器/写入器发送和接收数据的RFID标签的附接机构中，保持口保持RFID标签。 袋的取向保持恒定，使得可以高精度地读取数据的RFID标签的表面高度面对用于RFID读取器/写入器的天线，同时将RFID标签和天线之间的距离保持在一定范围内 范围，而不考虑推车的传送方向。