Substrate processing apparatus and substrate processing method
    1.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US07767053B2

    公开(公告)日:2010-08-03

    申请号:US11984186

    申请日:2007-11-14

    IPC分类号: C23F1/00 H01L21/306

    摘要: To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted. A controller 130 determines the generation of a harmful micro arc, when coincidence of three detection signals outputted from the detector 122 is obtained, supplies an RF cut signal to a CPU 116, and temporarily stops or temporarily decreases a high frequency power from the high frequency power source 111.

    摘要翻译: 通过检测微弧的产生,有效地防止微弧对装置和基板造成损害。 基板处理装置被构成为通过经由匹配单元300从高频电源部件100向设置在处理室200中的电极210施加高频电力来产生等离子体P.定向耦合器121被提供 在高频电源111和匹配单元300之间,使得从电极210反射的反射波和向电极210前进的行波耦合到检测器122.检测器122输出检测信号,当电平 的反射波Pr及其差分电平超过每个设定值。 为了在检测周期内放置初始放电周期,也输出作为延迟行波的延迟行波。 当获得从检测器122输出的三个检测信号的一致时,控制器130确定有害的微弧的产生,向CPU 116提供RF切断信号,并从高频临时停止或暂时降低高频功率 电源111。

    Substrate processing apparatus and substrate processing method
    2.
    发明申请
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US20080075640A1

    公开(公告)日:2008-03-27

    申请号:US11984186

    申请日:2007-11-14

    IPC分类号: H05H1/46 B01J19/08

    摘要: To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted. A controller 130 determines the generation of a harmful micro arc, when coincidence of three detection signals outputted from the detector 122 is obtained, supplies an RF cut signal to a CPU 116, and temporarily stops or temporarily decreases a high frequency power from the high frequency power source 111.

    摘要翻译: 通过检测微弧的产生,有效地防止微弧对装置和基板造成损害。 基板处理装置被构成为通过经由匹配单元300从高频电源部件100向设置在处理室200中的电极210施加高频电力来产生等离子体P. 定向耦合器121设置在高频电源111和匹配单元300之间,使得从电极210反射的反射波和向电极210前进的行波耦合到检测器122。 当反射波Pr和其差分电平的电平超过每个设定值时,检测器122输出检测信号。 为了在检测周期内放置初始放电周期,也输出作为延迟行波的延迟行波。 当获得从检测器122输出的三个检测信号的一致时,控制器130确定有害的微弧的产生,向CPU 116提供RF切断信号,并从高频临时停止或暂时降低高频功率 电源111。

    Substrate processing apparatus and sustrate processing method
    3.
    发明申请
    Substrate processing apparatus and sustrate processing method 审中-公开
    基板加工设备及基材加工方法

    公开(公告)号:US20060252283A1

    公开(公告)日:2006-11-09

    申请号:US10549279

    申请日:2004-08-04

    IPC分类号: H01L21/00

    摘要: To effectively prevent a micro arc causing damage to an apparatus and a substrate, by detecting a generation of the micro arc. A substrate processing apparatus is constituted so as to generate a plasma P, by applying a high frequency power to an electrode 210 provided in a processing chamber 200 from a high frequency power supply part 100 through a matching unit 300. A directional coupler 121 is provided between a high frequency power source 111 and the matching unit 300, so that a reflected wave reflected from the electrode 210 and a traveling wave advancing toward the electrode 210 are coupled to a detector 122. The detector 122 outputs a detection signal, when a level of a reflected wave Pr and a differential level thereof exceed each set value. In order to place an initial period of discharge out of a detection period, a delay traveling wave, which is a delayed traveling wave, is also outputted. A controller 130 determines the generation of a harmful micro arc, when coincidence of three detection signals outputted from the detector 122 is obtained, supplies an RF cut signal to a CPU 116, and temporarily stops or temporarily decreases a high frequency power from the high frequency power source 111.

    摘要翻译: 通过检测微弧的产生,有效地防止微弧对装置和基板造成损害。 基板处理装置被构成为通过经由匹配单元300从高频电源部件100向设置在处理室200中的电极210施加高频电力来产生等离子体P.定向耦合器121被提供 在高频电源111和匹配单元300之间,使得从电极210反射的反射波和向电极210前进的行波耦合到检测器122.检测器122输出检测信号,当电平 的反射波Pr及其差分电平超过每个设定值。 为了在检测周期内放置初始放电周期,也输出作为延迟行波的延迟行波。 当获得从检测器122输出的三个检测信号的一致时,控制器130确定有害的微弧的产生,向CPU 116提供RF切断信号,并从高频临时停止或暂时降低高频功率 电源111。