Semiconductor double-channel-planar-buried-heterostructure laser diode
effective against leakage current
    4.
    发明授权
    Semiconductor double-channel-planar-buried-heterostructure laser diode effective against leakage current 失效
    半导体双通道平面埋置异质结激光二极管有效抵抗漏电流

    公开(公告)号:US5400355A

    公开(公告)日:1995-03-21

    申请号:US217174

    申请日:1994-03-24

    申请人: Tomoko Ishida

    发明人: Tomoko Ishida

    摘要: A semiconductor double-channel-planar-buried-heterostructure laser diode has a pair of double channel structures provided on both sides of a multiple quantum well structure for blocking leakage current, and the leakage current is decreased by a carrier density of a current blocking layer of each double channel structure ranging between 3.times.10.sup.17 cm.sup.-3 and 1.times.10.sup.18 cm.sup.-3 and equal to or less than a carrier density of a cladding layer on the multiple quantum well structure, a width of each double channel structure ranging between 3.0 microns and 5.0 microns or a width of the multiple quantum well structure ranging between 1.6 microns and 2.2 microns.

    摘要翻译: 半导体双通道平面埋置异质结激光二极管在多量子阱结构的两侧设置一对双通道结构,用于阻断漏电流,并且漏电流由电流阻挡层的载流子密度降低 每个双通道结构在3×10 17 cm -3和1×10 18 cm -3之间并且等于或小于多量子阱结构上的包层的载流子密度,每个双通道结构的宽度在3.0微米至5.0微米之间 或多量子阱结构的宽度在1.6微米和2.2微米之间。