摘要:
A linear heater is formed of an enamel wire composed of a heating wire and an enamel layer. The heating wire is made of a copper alloy containing silver, for example. The enamel layer is made of polyester imide (PEI), polyimide (PI) or polyamide imide (PAI), for example. The enamel layer is coated with an insulating coating layer. The insulating coating layer is made of fluororesin such as perfluoroalkoxy mixture (PFA), polyimide (PI), or polyamide imide (PAI). The linear heater is bonded to the lower surface of an upper toilet seat casing such that it is sandwiched between a metal foil and a metal foil made of aluminum, for example.
摘要:
A washing nozzle of a toilet device has a flat part in its tip, and a jet hole for jetting washing water is provided in the flat part. The flat part and a tubular main body are monolithically joined together by a continuous face. This washing nozzle is manufactured by deep-drawing a thin sheet metal material and providing the flat part in its tip. Besides, a flow adjusting member for adjusting a flow of the washing water is internally inserted. These nozzles are stable in their jet directions, further crud is difficult to adhere thereto, and they are easy to be cleaned.
摘要:
A linear heater is formed of an enamel wire composed of a heating wire and an enamel layer. The heating wire is made of a copper alloy containing silver, for example. The enamel layer is made of polyester imide (PEI), polyimide (PI) or polyamide imide (PAI), for example. The enamel layer is coated with an insulating coating layer. The insulating coating layer is made of fluororesin such as perfluoroalkoxy mixture (PFA), polyimide (PI), or polyamide imide (PAI). The linear heater is bonded to the lower surface of an upper toilet seat casing such that it is sandwiched between a metal foil and a metal foil made of aluminum, for example.
摘要:
A semiconductor double-channel-planar-buried-heterostructure laser diode has a pair of double channel structures provided on both sides of a multiple quantum well structure for blocking leakage current, and the leakage current is decreased by a carrier density of a current blocking layer of each double channel structure ranging between 3.times.10.sup.17 cm.sup.-3 and 1.times.10.sup.18 cm.sup.-3 and equal to or less than a carrier density of a cladding layer on the multiple quantum well structure, a width of each double channel structure ranging between 3.0 microns and 5.0 microns or a width of the multiple quantum well structure ranging between 1.6 microns and 2.2 microns.
摘要翻译:半导体双通道平面埋置异质结激光二极管在多量子阱结构的两侧设置一对双通道结构,用于阻断漏电流,并且漏电流由电流阻挡层的载流子密度降低 每个双通道结构在3×10 17 cm -3和1×10 18 cm -3之间并且等于或小于多量子阱结构上的包层的载流子密度,每个双通道结构的宽度在3.0微米至5.0微米之间 或多量子阱结构的宽度在1.6微米和2.2微米之间。