公开(公告)号：US08828853B2

公开(公告)日：2014-09-09

申请号：US13415232

申请日：2012-03-08

申请人： Tomonori Aoyama ,  Kiyotaka Miyano

发明人： Tomonori Aoyama ,  Kiyotaka Miyano

IPC分类号： H01L21/20

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/78696 ,  H01L29/7926

摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括在衬底上形成非晶半导体膜。 该方法还包括通过用微波照射衬底来从非晶半导体膜形成多晶半导体膜来退火非晶半导体膜。 该方法还包括形成其通道为多晶半导体膜的晶体管。

公开(公告)号：US08759205B2

公开(公告)日：2014-06-24

申请号：US12883463

申请日：2010-09-16

申请人： Tomonori Aoyama ,  Yusuke Oshiki ,  Kiyotaka Miyano

发明人： Tomonori Aoyama ,  Yusuke Oshiki ,  Kiyotaka Miyano

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： H01L21/20 ,  H01L29/66

摘要： According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.

摘要翻译： 根据一个实施例，一种制造半导体器件的方法，其中使用微波对包含微晶的非晶半导体膜进行退火，以使用微晶作为核使包含微晶的非晶半导体膜结晶。

公开(公告)号：US20130221449A1

公开(公告)日：2013-08-29

申请号：US13607704

申请日：2012-09-08

申请人： Tomonori AOYAMA

发明人： Tomonori AOYAMA

IPC分类号： H01L21/225 ,  H01L29/76

CPC分类号： H01L21/2254 ,  H01L21/2225 ,  H01L21/2236 ,  H01L21/26526 ,  H01L21/823807 ,  H01L29/66803 ,  H01L29/76

摘要： According to one embodiment, a manufacturing method of a semiconductor device includes forming a monolayer that includes organic compounds that contain conductive type dopants on a semiconductor layer, applying a bias voltage to the semiconductor layer, and injecting plasma inactive gas ions against the monolayer, so that conductive type dopants included in the monolayer are impacted by the ions to form the dopant layer injected with the conductive type dopants in a semiconductor layer. This manufacturing method controls the density of the conductive type dopants in the dopant layer by changing a size of functional group.

摘要翻译： 根据一个实施例，半导体器件的制造方法包括形成单层，其包括在半导体层上含有导电型掺杂剂的有机化合物，向半导体层施加偏置电压，并将等离子体惰性气体离子注入单层，因此 包含在单层中的导电型掺杂剂被离子冲击以在半导体层中形成注入了导电型掺杂剂的掺杂剂层。 该制造方法通过改变官能团的尺寸来控制掺杂剂层中的导电型掺杂剂的密度。

公开(公告)号：US20130189838A1

公开(公告)日：2013-07-25

申请号：US13597879

申请日：2012-08-29

申请人： Makoto HONDA ,  Tomonori AOYAMA

发明人： Makoto HONDA ,  Tomonori AOYAMA

IPC分类号： H01L21/44

CPC分类号： H01L21/324 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  C23C16/517 ,  H01L21/28052 ,  H01L21/67115 ,  H01L29/665 ,  H01L29/78

摘要： According to one embodiment, a semiconductor manufacturing apparatus has a chamber, a microwave generator for generating a microwave, a waveguide for introducing the microwave into the chamber, a stage for mounting a semiconductor substrate, and a cover for covering an outer circumference portion of the stage exposed from the semiconductor substrate. In the semiconductor manufacturing apparatus, the stage is made of a material to be heated by the microwave, and the cover is made of a material through which the microwave penetrates.

摘要翻译： 根据一个实施例，半导体制造装置具有腔室，用于产生微波的微波发生器，用于将微波引入腔室的波导，用于安装半导体衬底的台架以及用于覆盖半导体衬底的外周部分的盖子 从半导体衬底暴露的阶段。 在半导体制造装置中，该台由微波加热的材料制成，盖由微波穿过的材料制成。

公开(公告)号：US08198155B2

公开(公告)日：2012-06-12

申请号：US12693985

申请日：2010-01-26

申请人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

发明人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L29/51

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/82385 ,  H01L29/1054 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659

摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.

摘要翻译： 根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。 该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜， 形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜， 并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度 层形成在第一区域中。

公开(公告)号：US08143676B2

公开(公告)日：2012-03-27

申请号：US12261770

申请日：2008-10-30

申请人： Seiji Inumiya ,  Takuya Kobayashi ,  Tomonori Aoyama

发明人： Seiji Inumiya ,  Takuya Kobayashi ,  Tomonori Aoyama

IPC分类号： H01L21/02

CPC分类号： H01L21/823857 ,  H01L21/02148 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/31645

摘要： A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET.

摘要翻译： 半导体器件包括在其表面上具有第一和第二区域的衬底，在第一区域中形成的第一导电类型的第一MISFET和形成在第二区域中的第二导电类型的第二MISFET。 第一MISFET包括在基板的表面上形成的氧化硅膜或氮氧化硅膜，以及形成为与氧化硅膜或氮氧化硅膜接触形成的第一元件的第一绝缘膜，其具有形成电偶极子的第一元件， 降低第一MISFET的阈值电压，并且第二MISFET包括在衬底的表面上形成的氧化硅膜或氧氮化硅膜，以及形成为与氧化硅膜或氮氧化硅膜接触的第二绝缘膜 形成在基板的表面上，并且具有在与第一MISFET中的方向相反的方向上形成电偶极子的第二元件。

公开(公告)号：US20120045882A1

公开(公告)日：2012-02-23

申请号：US13282507

申请日：2011-10-27

申请人： Seiji Inumiya ,  Tomonori Aoyama

发明人： Seiji Inumiya ,  Tomonori Aoyama

IPC分类号： H01L21/762 ,  H01L21/28

CPC分类号： H01L21/28167 ,  H01L21/02057 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/7624 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device manufacturing method includes: removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the semiconductor substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the semiconductor substrate on the surface of the semiconductor substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into a insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the semiconductor substrate, and oxygen.

摘要翻译： 半导体器件制造方法包括：通过使用液体氧化剂蚀刻并随后氧化半导体衬底的表面而在半导体衬底上去除绝缘膜而不将该表面暴露在大气中，从而形成含有氧化物的第一绝缘膜 半导体衬底的表面上的构成元件; 在所述第一绝缘膜上形成含有氧化铝的第二绝缘膜; 在所述第二绝缘膜上形成含有稀土类氧化物的第三绝缘膜; 在第三绝缘膜上形成高k绝缘膜; 将氮引入高k绝缘膜，从而使其成为第四绝缘膜; 并且进行热处理以将第一至第三绝缘膜改变为由含有铝，稀土元素，半导体衬底的构成元素和氧的混合物制成的绝缘膜。

公开(公告)号：US20110111580A1

公开(公告)日：2011-05-12

申请号：US12878780

申请日：2010-09-09

申请人： Tomonori AOYAMA ,  Kiyotaka Miyano

发明人： Tomonori AOYAMA ,  Kiyotaka Miyano

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/84 ,  H01L29/045

摘要： According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming an amorphous layer on a portion of a first silicon substrate having a first plane orientation, and irradiating with micro wave on the amorphous layer to transform from the amorphous layer into a crystalline layer having the first plane orientation.

摘要翻译： 根据一个实施例，公开了制造半导体器件的方法。 该方法可以包括在具有第一平面取向的第一硅衬底的一部分上形成非晶层，并且在非晶层上照射微波以从非晶层转变为具有第一平面取向的晶体层。

公开(公告)号：US20100187612A1

公开(公告)日：2010-07-29

申请号：US12693985

申请日：2010-01-26

申请人： Daisuke IKENO ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

发明人： Daisuke IKENO ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/82385 ,  H01L29/1054 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659

摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.

摘要翻译： 根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。 该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜， 形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜， 并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度 层形成在第一区域中。

公开(公告)号：US20080096676A1

公开(公告)日：2008-04-24

申请号：US11795713

申请日：2006-01-19

申请人： Tsutomu Kawakatsu ,  Naoto Shibata ,  Masato Saika ,  Tomonori Aoyama

发明人： Tsutomu Kawakatsu ,  Naoto Shibata ,  Masato Saika ,  Tomonori Aoyama

IPC分类号： F16D3/205 ,  F16D3/16

CPC分类号： F16D3/2055 ,  F16D2003/2026 ,  Y10S464/905

摘要： A constant velocity joint, wherein the tilt angle of a first trunnion relative to a plane crossing perpendicularly to the axis of a second shaft is set to be different from the tilt angle of a second trunnion and the tilt angle of a third trunnion. The tilt angle of the second trunnion and the tilt angle of the third trunnion are set to be equal to each other, and three axes of the first to third trunnions are set to be included on a same plane

摘要翻译： 等速万向节，其中第一耳轴相对于垂直于第二轴的轴线交叉的平面的倾斜角被设定为不同于第二耳轴的倾斜角和第三耳轴的倾斜角。 第二耳轴的倾斜角度和第三耳轴的倾斜角度被设定为彼此相等，并且将第一至第三耳轴的三个轴线设置为包括在同一平面上