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29 条记录 (耗时 0.022 秒)

    Positive resist composition and patterning process
    1.
    发明授权
    Positive resist composition and patterning process 失效
    正抗蚀剂组成和图案化工艺

    公开(公告)号：US06911292B2

    公开(公告)日：2005-06-28

    申请号：US10737788

    申请日：2003-12-18

    申请人： Tomoyoshi Furihata ,  Hideto Kato

    发明人： Tomoyoshi Furihata ,  Hideto Kato

    IPC分类号： G03F7/022 ,  C08F222/02 ,  C08G8/28 ,  G03F7/023 ,  G03F7/033 ,  G03F7/40 ,  H01L21/027 ,  H05K3/18 ,  H05K3/24 ,  G03F7/30

    CPC分类号： G03F7/0233 ,  G03F7/023 ,  G03F7/40 ,  H05K3/184 ,  H05K3/243

    摘要： A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.

    摘要翻译： 正型抗蚀剂组合物含有酚醛清漆树脂，其中3〜27摩尔％的羟基氢被1,2-萘醌二叠氮磺酰酯基取代，甲基乙烯基醚 - 单烷基马来酸酯共聚物和任选的碱溶性纤维素，其葡萄糖环 取代基以特定速率被有机基团取代。 该组合物可用作经受电镀步骤的厚膜光致抗蚀剂，并且在电镀步骤期间和之后提供许多优点，包括高灵敏度，垂直几何形状，高分辨率和抗裂纹性。

    2,4-diamino-s-triazinyl group-containing polymer and negative radiation-sensitive resist composition containing the same
    2.
    发明授权
    2,4-diamino-s-triazinyl group-containing polymer and negative radiation-sensitive resist composition containing the same 失效
    包含2,4-二氨基-s-三嗪基的聚合物和含有它们的负辐射敏感抗蚀剂组合物

    公开(公告)号：US5618892A

    公开(公告)日：1997-04-08

    申请号：US561625

    申请日：1995-11-21

    申请人： Tomoyoshi Furihata ,  Motoyuki Yamada

    发明人： Tomoyoshi Furihata ,  Motoyuki Yamada

    IPC分类号： C08F8/30 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027 ,  C08F283/00 ,  C08G8/28

    CPC分类号： G03F7/038 ,  C08F8/30 ,  G03F7/0045

    摘要： A polyhydroxystyrene having a 2,4-diamino-s-triazinyl group substituted for 1-50 mol % of its hydroxyl group and a weight average molecular weight of 3,000-50,000 is provided. A negative radiation-sensitive resist composition comprising the polymer, preferably along with a photo-acid generator and a crosslinking agent has high resolution and developability, affords a resist pattern of rectangular profile, and is shelf stable. The composition is thus very useful as resist material for LSI manufacture.

    摘要翻译： 提供具有2,4-二氨基-s-三嗪基取代其羟基的1-50mol％，重均分子量为3,000〜5,000的聚羟基苯乙烯。 包含聚合物，优选与光酸发生剂和交联剂一起的负辐射敏感抗蚀剂组合物具有高分辨率和显影性，提供矩形轮廓的抗蚀剂图案，并且是稳定的。 因此，该组合物作为用于LSI制造的抗蚀材料是非常有用的。

    Method for manufacturing micro-structure
    3.
    发明授权
    Method for manufacturing micro-structure 有权
    微结构制造方法

    公开(公告)号：US08785114B2

    公开(公告)日：2014-07-22

    申请号：US13157460

    申请日：2011-06-10

    申请人： Hideto Kato ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    发明人： Hideto Kato ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    IPC分类号： G03F7/30 ,  G03F7/40 ,  G03F7/038 ,  G03F7/023 ,  G03F7/20

    CPC分类号： C09D163/04 ,  B81C1/00619 ,  B81C2201/0108 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/30 ,  G03F7/40 ,  G03F7/70466

    摘要： A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

    摘要翻译： 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间 。 图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光 牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

    Silicone rubber composition for optical sheet, and optical sheet
    4.
    发明授权
    Silicone rubber composition for optical sheet, and optical sheet 失效
    光学片用硅橡胶组合物和光学片

    公开(公告)号：US08628858B2

    公开(公告)日：2014-01-14

    申请号：US13338396

    申请日：2011-12-28

    申请人： Minoru Igarashi ,  Tsutomu Nakamura ,  Atsuo Ito ,  Tomoyoshi Furihata ,  Hyung-Bae Kim

    发明人： Minoru Igarashi ,  Tsutomu Nakamura ,  Atsuo Ito ,  Tomoyoshi Furihata ,  Hyung-Bae Kim

    IPC分类号： B32B9/04

    CPC分类号： C08K3/36 ,  C08K5/5419 ,  C08K9/06 ,  Y02E10/52 ,  Y10T428/31663 ,  C08L83/04

    摘要： Disclosed is a millable type silicone rubber composition including as an essential components: (A) 100 parts by weight of an organopolysiloxane represented by the following average compositional formula (I) and having a polymerization degree of at least 100; R1aSiO(4-a)/2  (I) wherein R1 are, identical or different, unsubstituted or substituted monovalent hydrocarbon groups, and a is a positive number of 1.95 to 2.05; (B) 70 to 150 parts by weight of fumed silica having a specific surface area of more than 200 m2/g; (C) 0.1 to 30 parts by weight of an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule; and (D) 0.1 to 10 parts by weight of a hydrosilylation reaction catalyst.

    摘要翻译： 公开了一种可粉碎型硅橡胶组合物，其包含作为必要成分的（A）100重量份由以下平均组成式（I）表示的聚合度为至少100的有机聚硅氧烷; R1aSiO（4-a）/ 2（I）其中R1是相同或不同的未取代或取代的一价烃基，a是1.95〜2.05的正数; （B）70〜150重量份比表面积大于200m 2 / g的热解法二氧化硅; （C）0.1〜30重量份在1分子中具有与硅原子键合的氢原子中的至少2个氢原子的有机氢聚硅氧烷; 和（D）0.1〜10重量份的氢化硅烷化反应催化剂。

    METHOD FOR MANUFACTURING MICRO-STRUCTURE
    5.
    发明申请
    METHOD FOR MANUFACTURING MICRO-STRUCTURE 有权
    制造微结构的方法

    公开(公告)号：US20110305990A1

    公开(公告)日：2011-12-15

    申请号：US13157460

    申请日：2011-06-10

    申请人： Hideto KATO ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    发明人： Hideto KATO ,  Hiroshi Kanbara ,  Tomoyoshi Furihata ,  Yoshinori Hirano

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： C09D163/04 ,  B81C1/00619 ,  B81C2201/0108 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/30 ,  G03F7/40 ,  G03F7/70466

    摘要： A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

    摘要翻译： 通过图案化牺牲膜来制造微结构，在图案上形成无机材料膜，为无机材料膜提供孔，并通过孔蚀刻掉牺牲膜图案，以限定具有图案轮廓的空间 。 图案化阶段包括以下步骤：（A）使用包含甲酚酚醛清漆树脂和交联剂的组合物形成牺牲膜，（B）将膜图案化为第一高能辐射，（C）显影，和（D）曝光 牺牲膜图案到第二高能量辐射和热处理，从而在甲酚酚醛清漆树脂内形成交联。

    Positive resist composition and patterning process
    8.
    发明授权
    Positive resist composition and patterning process 有权
    正抗蚀剂组成和图案化工艺

    公开(公告)号：US07175960B2

    公开(公告)日：2007-02-13

    申请号：US10936621

    申请日：2004-09-09

    申请人： Tomoyoshi Furihata ,  Hideto Kato

    发明人： Tomoyoshi Furihata ,  Hideto Kato

    IPC分类号： G03F7/023 ,  G03F7/30

    CPC分类号： G03F7/0236 ,  G03F7/022

    摘要： A positive resist composition comprising a mixture of an alkali-soluble novolak resin prepared using m-cresol, p-cresol and 2,5-xylenol as starting reactants and a phenolic compound, wherein the hydrogen atoms of all hydroxyl groups are substituted in a proportion of 0.03–0.05 mol per hydrogen atom with 1,2-naphthoquinonediazidosulfonyl ester groups, has uniformity, high sensitivity and high resolution, and is improved in heat resistance, film retention, substrate adhesion, and storage stability.

    摘要翻译： 一种正性抗蚀剂组合物，其包含使用间甲酚，对甲酚和2,5-二甲苯酚作为起始反应物制备的碱溶性酚醛清漆树脂和酚类化合物的混合物，其中所有羟基的氢原子以一定比例被取代 每个氢原子为0.03-0.05mol与1,2-萘醌二叠氮磺酰酯基团，具有均匀性，高灵敏度和高分辨率，并且耐热性，保留膜，基材粘合性和储存稳定性都得到改善。

    Positive photoresist composition
    9.
    发明授权
    Positive photoresist composition 有权

    公开(公告)号：US06773858B2

    公开(公告)日：2004-08-10

    申请号：US10635032

    申请日：2003-08-06

    申请人： Hideto Kato ,  Kyoko Soga ,  Tomoyoshi Furihata

    发明人： Hideto Kato ,  Kyoko Soga ,  Tomoyoshi Furihata

    IPC分类号： G03F7023

    CPC分类号： G03F7/0233 ,  G03F7/023

    摘要： A photoresist composition comprising a novolac resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl groups and an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate is used in microprocessing as a positive photoresist and offers many advantages including uniformity, high sensitivity, high resolution, good pattern shape, heat resistance, film retention, substrate adhesion, shelf stability, and high throughput.