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    Laser diode device including a top electrode with first and second sections
    2.
    发明授权
    Laser diode device including a top electrode with first and second sections 有权
    激光二极管器件包括具有第一和第二部分的顶部电极

    公开(公告)号：US09001860B2

    公开(公告)日：2015-04-07

    申请号：US13310260

    申请日：2011-12-02

    申请人： Tomoyuki Oki ,  Hideki Watanabe ,  Rintaro Koda ,  Masaru Kuramoto ,  Hiroyuki Yokoyama

    发明人： Tomoyuki Oki ,  Hideki Watanabe ,  Rintaro Koda ,  Masaru Kuramoto ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/323 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/10 ,  H01S5/14 ,  H01S5/22

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/06253 ,  H01S5/0658 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/141 ,  H01S5/22

    摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1

    摘要翻译： 激光二极管装置包括其中依次层叠有第一化合物半导体层，具有发光区域和可饱和吸收区域的第三化合物半导体层和第二化合物半导体层的层叠结构，第二电极和第一 电极。 层叠结构具有脊状结构。 将第二电极分离为第一部分，以通过通过发光区域向第一电极施加直流电流以及通过隔离沟槽向可饱和吸收区域加电场的第二部分来获得正向偏置状态。 当脊条纹结构的最小宽度为WMIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W2，1

    Vertical cavity surface emitting laser
    3.
    发明授权
    Vertical cavity surface emitting laser 有权
    垂直腔表面发射激光

    公开(公告)号：US08290009B2

    公开(公告)日：2012-10-16

    申请号：US12458962

    申请日：2009-07-28

    申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

    发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18336 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18358 ,  H01S2301/166

    摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.

    摘要翻译： 垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从 并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和 第二多层反射镜，或第二多层反射镜。 在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

    LASER DIODE ASSEMBLY
    4.
    发明申请
    LASER DIODE ASSEMBLY 有权
    激光二极管总成

    公开(公告)号：US20120099610A1

    公开(公告)日：2012-04-26

    申请号：US13267509

    申请日：2011-10-06

    申请人： Shunsuke Kono ,  Hiroyuki Yokoyama ,  Masaru Kuramoto ,  Tomoyuki Oki

    发明人： Shunsuke Kono ,  Hiroyuki Yokoyama ,  Masaru Kuramoto ,  Tomoyuki Oki

    IPC分类号： H01S3/098

    CPC分类号： H01S5/0657 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/141 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3216 ,  H01S5/34333

    摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.

    摘要翻译： 激光二极管组件包括：锁模激光二极管器件; 配置外部谐振器的衍射光栅将一次或更多次衍射光返回到锁模激光二极管器件，并将0级衍射光输出到外部; 以及设置在所述锁模激光二极管器件和所述衍射光栅之间的成像部分，并且对所述衍射光栅上的所述锁模激光二极管器件的光输出端面的图像进行成像。

    MODE-LOCKED SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF
    7.
    发明申请
    MODE-LOCKED SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF 有权
    模式锁定半导体激光器件及其驱动方法

    公开(公告)号：US20110216788A1

    公开(公告)日：2011-09-08

    申请号：US13035540

    申请日：2011-02-25

    申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    IPC分类号： H01S3/098

    摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

    摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

    Laser diode
    8.
    发明申请
    Laser diode 有权
    激光二极管

    公开(公告)号：US20110064109A1

    公开(公告)日：2011-03-17

    申请号：US12805876

    申请日：2010-08-23

    申请人： Yuji Masui ,  Rintaro Koda ,  Tomoyuki Oki ,  Takahiro Arakida ,  Naoki Jogan ,  Yoshinori Yamauchi

    发明人： Yuji Masui ,  Rintaro Koda ,  Tomoyuki Oki ,  Takahiro Arakida ,  Naoki Jogan ,  Yoshinori Yamauchi

    IPC分类号： H01S5/323 ,  H01S5/00 ,  H01S5/183

    CPC分类号： H01S5/18311 ,  H01S5/1833 ,  H01S5/18358 ,  H01S2301/173

    摘要： A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.

    摘要翻译： 提供了能够防止电流变窄层分离的激光二极管。 激光二极管包括依次具有第一多层膜反射器，有源层和第二多层膜反射器的台面，并且具有用于使注入有源层的电流变窄的电流变窄层和与该有源层相邻的缓冲层 目前缩窄层。 通过氧化含有Al的第一氧化层形成电流变窄层。 通过氧化选择材料和厚度的第二氧化层使得氧化速率高于第一多层膜反射器和第二多层膜反射器的氧化速率并且低于第一氧化层的氧化速率而形成缓冲层。 缓冲层的厚度为10nm以上。

    Laser diode
    9.
    发明授权
    Laser diode 失效
    激光二极管

    公开(公告)号：US07873092B2

    公开(公告)日：2011-01-18

    申请号：US11980459

    申请日：2007-10-31

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Rintaro Koda ,  Tomoyuki Oki

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Norihiko Yamaguchi ,  Rintaro Koda ,  Tomoyuki Oki

    IPC分类号： H01S5/00

    CPC分类号： H01S5/0264 ,  H01L31/101 ,  H01S5/0683 ,  H01S5/18311 ,  H01S2301/02

    摘要： The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.

    摘要翻译： 本发明提供一种实现改进的光检测精度的激光二极管。 激光二极管包括其中依次包括第一导电类型，有源层和第二导电类型的第二半导体层的第一半导体层的堆叠结构; 光电检测层; 以及设置在从有源层输出的光的驻波的波腹或节点的对应位置上的多个光吸收层。

    Method for manufacturing semiconductor light-emitting device
    10.
    发明授权
    Method for manufacturing semiconductor light-emitting device 有权
    半导体发光元件的制造方法

    公开(公告)号：US07871841B2

    公开(公告)日：2011-01-18

    申请号：US12285267

    申请日：2008-10-01

    申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki

    发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki

    IPC分类号： H01L21/00 ,  H01S5/22

    CPC分类号： H01S5/18311 ,  H01S5/18358 ,  H01S5/2086

    摘要： A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask.

    摘要翻译： 一种制造半导体发光器件的方法包括以下步骤：在半导体衬底上形成包括待氧化层的垂直腔结构，然后形成具有从上部至少穿透氧化层的深度的圆形槽 从而形成其侧面被槽包围的柱状台面，从台面的侧面氧化待氧化层，形成电流限制层，形成掩模层至少覆盖 台面的上表面的中心区域，并将台面的上表面和侧面的至少边缘暴露于外部，然后至少蚀刻台面的上表面和侧面的边缘 使用掩模层作为掩模。