公开(公告)号：US09437419B2

公开(公告)日：2016-09-06

申请号：US14173381

申请日：2014-02-05

申请人： Younsoo Kim ,  Sangyeol Kang ,  Hiroki Sato ,  Tsubasa Shiratori ,  Naoki Yamada ,  Chayoung Yoo ,  Younjoung Cho ,  Chin Moo Cho ,  Jaehyoung Choi

发明人： Younsoo Kim ,  Sangyeol Kang ,  Hiroki Sato ,  Tsubasa Shiratori ,  Naoki Yamada ,  Chayoung Yoo ,  Younjoung Cho ,  Chin Moo Cho ,  Jaehyoung Choi

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  H01L49/02

CPC分类号： H01L21/0217 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L28/40

摘要： A trialkylsilane-based silicon precursor compound may be expressed by Si(Ri)X, i=1-3, where each of “R1”, “R2”, and “R3” is a hydrogen or an alkyl having 1-5 carbon(s), all of “R1”, “R2”, and “R3” are not hydrogen, “X” is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3, and “R*” is a hydrogen or an alkyl group having 1˜5 carbon(s).

摘要翻译： 三烷基硅烷类硅前体化合物可以由Si（R 1）X，i = 1-3表示，其中“R1”，“R2”和“R3”各自为氢或具有1-5个碳原子的烷基 s），“R1”，“R2”和“R3”全部不为氢，“X”为氢，羟基，酰胺基，醇盐基，卤化物基或Si（R * ）3，“R *”为氢或碳原子数为1〜5的烷基。

公开(公告)号：US20140273512A1

公开(公告)日：2014-09-18

申请号：US14173381

申请日：2014-02-05

申请人： Younsoo KIM ,  Sangyeol KANG ,  Hiroki SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA ,  Chayoung YOO ,  Younjoung CHO ,  Chin Moo CHO ,  Jaehyoung CHOI

发明人： Younsoo KIM ,  Sangyeol KANG ,  Hiroki SATO ,  Tsubasa SHIRATORI ,  Naoki YAMADA ,  Chayoung YOO ,  Younjoung CHO ,  Chin Moo CHO ,  Jaehyoung CHOI

IPC分类号： H01L21/02

CPC分类号： H01L21/0217 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L28/40

摘要： A trialkylsilane-based silicon precursor compound may be expressed by the following chemical formula 1. In the chemical formula 1, each of “R1”, “R2”, and “R3” is a hydrogen or an alkyl having 1˜5 carbon(s), all of “R1”, “R2”, and “R3” are not hydrogen, “X” is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3, and “R*” is a hydrogen or an alkyl group having 1˜5 carbon(s).

摘要翻译： 三烷基硅烷系硅前体化合物可以由以下化学式1表示。在化学式1中，“R1”，“R2”和“R3”各自为氢或碳原子数为1〜5的烷基 ），“R1”，“R2”和“R3”全部不是氢，“X”是氢，羟基，酰胺基，醇盐基，卤化物基或Si（R *）中的一个， 3，“R *”为氢或碳原子数为1〜5的烷基。

公开(公告)号：US20110268887A1

公开(公告)日：2011-11-03

申请号：US13143298

申请日：2010-02-15

申请人： Tsubasa Shiratori ,  Tsuyoshi Watanabe ,  Yoshiji Enomoto

发明人： Tsubasa Shiratori ,  Tsuyoshi Watanabe ,  Yoshiji Enomoto

IPC分类号： B05D3/04 ,  B01D12/00

CPC分类号： H01L21/28562 ,  C23C16/4402 ,  C23C16/4482 ,  C23C16/45534 ,  H01L21/28194 ,  H01L28/55

摘要： The present process for removing residual water molecules is suitably used in a metallic thin film production method of forming a metallic thin film on a substrate. The residual-water-molecule removal process involves removing residual water molecules using a gas generated by vaporizing a purge solvent. Preferably, the purge solvent is an organic solvent or an organic solvent composition having a water content at the azeotropic composition of at least 20% by mass. With the present residual-water-molecule removal process, water molecules remaining in the system can be removed efficiently in the production of metallic thin films by the ALD method or the like, and thus, the film-formation time can be shortened and metallic thin films can be produced efficiently.

摘要翻译： 本发明的除去残留水分子的方法适用于在基材上形成金属薄膜的金属薄膜制造方法。 残余水分子去除方法包括使用通过蒸发清除溶剂产生的气体来除去残留的水分子。 优选地，清洗溶剂是共沸组合物的水含量为至少20质量％的有机溶剂或有机溶剂组合物。 通过本发明的残留水分子去除方法，可以通过ALD法等在金属薄膜的制造中有效地除去系统中残存的水分子，从而可以缩短成膜时间，金属薄膜 可以有效地制作薄膜。