公开(公告)号：US08888081B2

公开(公告)日：2014-11-18

申请号：US13516632

申请日：2010-12-15

申请人： Tsuyoshi Inoue

发明人： Tsuyoshi Inoue

IPC分类号： B60G15/06 ,  F16F9/54 ,  F16F1/38 ,  B60G13/00

CPC分类号： F16F9/54 ,  B60G13/003 ,  B60G15/067 ,  B60G2204/128 ,  B60G2204/418 ,  B60G2206/013 ,  B60G2206/41 ,  B60G2206/82 ,  B60G2206/91 ,  F16F1/38

摘要： Disclosed is a strut mount wherein an inclination of an outer circumferential surface of an outer cylinder (2) with respect to the central axis of the outer cylinder (2) is greater than that of an inner circumferential surface of a tapered sidewall (12) of a vehicle body panel (10) which is shaped like an inverted dish. When the strut mount is positioned to be fitted to the vehicle body panel (10), the elastic member (4) is brought into contact with the inner surface of the vehicle body panel (10) only at a portion (4a) of the elastic member (4) that covers the outer circumferential surface of the outer cylinder (2).

摘要翻译： 公开了一种支柱安装件，其中外筒（2）的外圆周表面相对于外筒（2）的中心轴线的倾斜度大于锥形侧壁（12）的内圆周表面的倾斜度 车身板（10），其形状类似于倒盘。 当支柱安装件被定位成装配到车体面板（10）时，弹性构件（4）仅在弹性构件（4）的部分（4a）处与车身面板（10）的内表面接触 构件（4），其覆盖外筒（2）的外周面。

公开(公告)号：US08823002B2

公开(公告)日：2014-09-02

申请号：US13510315

申请日：2010-08-23

申请人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

发明人： Michiko Takei ,  Tohru Okabe ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

IPC分类号： H01L31/036 ,  H01L21/268 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L21/268 ,  H01L27/1229 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678

摘要： An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer (34) with energy, thereby obtaining a microcrystalline silicon layer; and forming a doped semiconductor layer (35) on the amorphous silicon layer (34). In the step of irradiating, the amorphous silicon layer (34) is irradiated with energy that has a first quantity, thereby forming a first microcrystalline silicon layer (34A) including a channel layer for a first TFT (30A), and is also irradiated with energy that has a second quantity, which is larger than the first quantity, thereby forming a second microcrystalline silicon layer (34B) including a channel layer for a second TFT (30B).

摘要翻译： 本发明的目的是提供一种半导体器件，其中具有高迁移率的TFT被布置在显示器和外围电路区域中。 根据本发明的半导体器件制造方法包括以下步骤：用能量照射非晶硅层（34），从而获得微晶硅层; 以及在所述非晶硅层（34）上形成掺杂半导体层（35）。 在照射步骤中，用具有第一量的能量照射非晶硅层（34），由此形成包括用于第一TFT（30A）的沟道层的第一微晶硅层（34A），并且还用 具有大于第一量的第二量的能量，由此形成包括用于第二TFT（30B）的沟道层的第二微晶硅层（34B）。

公开(公告)号：US20130184445A1

公开(公告)日：2013-07-18

申请号：US13825280

申请日：2011-09-20

申请人： Norihiko Nishizawa ,  Hiroyoshi Matsumura ,  Yuusuke Mori ,  Shutaro Ishida ,  Kazuyoshi Itoh ,  Shigeru Sugiyama ,  Hiroaki Adachi ,  Tsuyoshi Inoue ,  Kazufumi Takano ,  Murakami Satoshi

发明人： Norihiko Nishizawa ,  Hiroyoshi Matsumura ,  Yuusuke Mori ,  Shutaro Ishida ,  Kazuyoshi Itoh ,  Shigeru Sugiyama ,  Hiroaki Adachi ,  Tsuyoshi Inoue ,  Kazufumi Takano ,  Murakami Satoshi

IPC分类号： G01B9/02 ,  C07K1/30

CPC分类号： G01B9/02091 ,  C07K1/306 ,  G01N21/4795 ,  G01N2021/1787

摘要： Provided are a method for observing protein crystal, wherein the growth process of the protein crystals is nondestructively and three-dimensionally monitored on a real-time basis and the growth of the crystals is controlled at a high accuracy to thereby enable the formation of single crystals having good qualities, which comprises observing the protein crystals, said protein crystals having been produced by a crystallization method using a gel, by an OCT measurement using light emitted from an ultrawideband light source;a method for observing protein crystals wherein the ultrawideband light source is an ultrawideband supercontinuum light source; a method for observing protein crystals wherein the center wavelength of the light emitted from the ultrawideband supercontinuum light source is a 0.8 μm band; and a method for observing protein crystals wherein the monitoring of the protein crystals is a monitoring by an in situ measurement.

摘要翻译： 提供了一种用于观察蛋白质晶体的方法，其中蛋白质晶体的生长过程以实时的方式非破坏性和三维地监测，并且以高精度控制晶体的生长，从而能够形成单晶 具有良好的质量，其包括通过使用从超宽带光源发射的光的OCT测量观察蛋白质晶体，所述蛋白质晶体是通过使用凝胶的结晶方法产生的; 一种观察蛋白质晶体的方法，其中超宽带光源是超宽带超连续光源; 观察蛋白质晶体的方法，其中从超宽带超连续光源发射的光的中心波长为0.8μm波段; 以及观察蛋白质晶体的方法，其中蛋白质晶体的监测是通过原位测量的监测。

公开(公告)号：US08480843B2

公开(公告)日：2013-07-09

申请号：US11750607

申请日：2007-05-18

申请人： Tsuyoshi Inoue ,  Kazuhito Okumura ,  Hiroshi Yada

发明人： Tsuyoshi Inoue ,  Kazuhito Okumura ,  Hiroshi Yada

IPC分类号： C04B37/00 ,  B32B7/12 ,  B32B15/04

CPC分类号： H01J17/04 ,  C09J7/38 ,  C09J7/385 ,  H01J2211/446 ,  H05K9/0096 ,  Y10T428/12465 ,  Y10T428/28 ,  Y10T428/2804 ,  Y10T428/2843 ,  Y10T428/2848 ,  Y10T428/2857

摘要： A process for protecting a surface of a metal layer or a metal oxide layer including providing a protective film containing a base material and a pressure-sensitive adhesive layer formed thereon, wherein the surface of the pressure-sensitive adhesive layer has a contact angle with methylene iodide as measured just after contact, θ1, of 70° or smaller and a change in contact angle with methylene iodide through 30-second standing, Δθ, of 8% or less.

摘要翻译： 一种用于保护金属层或金属氧化物层的表面的方法，包括提供含有形成在其上的基材和压敏粘合剂层的保护膜，其中压敏粘合剂层的表面与亚甲基具有接触角 接触后测量的碘化物，θ1为70°或更小，与二氯甲烷的接触角随着30秒的静置，Deltatheta的变化，为8％或更低。

公开(公告)号：US20130134411A1

公开(公告)日：2013-05-30

申请号：US13640868

申请日：2011-04-05

申请人： Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Yoshinobu Miyamoto ,  Hinae Mizuno

发明人： Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yuuji Mizuno ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Yoshinobu Miyamoto

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66742

摘要： A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).

摘要翻译： 根据本发明的半导体器件（100A）包括氧化物半导体层（31a），第一和第二源电极（52a1和52a2）以及第一和第二漏电极（53a1和53a2）。 第二源电极（52a2）形成为与第一源电极的顶表面接触并且在第一源电极（52a1）内部。 第二漏电极（53a2）形成为与第一漏电极（53a1）的顶表面接触并且在第一漏极电极（53a1）的内部。 氧化物半导体层（31a）形成为与第一源电极（52a1）的顶表面和第一漏电极（53a1）的顶表面接触。

公开(公告)号：US08441016B2

公开(公告)日：2013-05-14

申请号：US13383077

申请日：2010-07-08

申请人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

发明人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

IPC分类号： H01L33/08

CPC分类号： H01L29/78627 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78624

摘要： Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer (34) that contains a channel region (34C) having a microcrystalline semiconductor; source and drain contact layers (35S and 35D) that contains impurities; a first source metal layer (36S) and a first drain metal layer (36D), and a second source metal layer (37S) and a second drain metal layer (37D). The end portion of the second metal source layer (37S) is located at a position receded from the end portion of the first metal source layer (36S) and the end portion of the second drain metal layer (37D) is located at a position receded from the end portion of the first drain metal layer (36D). The semiconductor layer (34) contains low concentration impurity diffusion regions formed near the end portions of the aforementioned source contact layer (35S) and drain contact layer (35D).

摘要翻译： 公开了一种其中泄漏电流最小化的高品质，高效制造的薄膜晶体管。 薄膜晶体管设置有包含具有微晶半导体的沟道区（34C）的半导体层（34） 源极和漏极接触层（35S和35D），其含有杂质; 第一源极金属层（36S）和第一漏极金属层（36D）以及第二源极金属层（37S）和第二漏极金属层（37D）。 第二金属源层（37S）的端部位于从第一金属源层（36S）的端部退出的位置，第二漏极金属层（37D）的端部位于退出的位置 从第一漏极金属层（36D）的端部开始。 半导体层（34）包含在上述源极接触层（35S）和漏极接触层（35D）的端部附近形成的低浓度杂质扩散区域。

公开(公告)号：US20130026462A1

公开(公告)日：2013-01-31

申请号：US13581094

申请日：2011-02-14

申请人： Michiko Takei ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yoshiyuki Harumoto ,  Hinae Mizuno

发明人： Michiko Takei ,  Yuuji Mizuno ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yoshiyuki Harumoto

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A method for manufacturing a thin film transistor includes the step of forming a gate electrode (11aa) on an insulating substrate, the step of forming a gate insulating layer (12) to cover the gate electrode (11aa), and thereafter, forming an oxide semiconductor layer (13a) on the gate insulating layer (12), the step of forming a source electrode (16aa) and a drain electrode (16b) on the oxide semiconductor layer (13a) by dry etching, with a channel region (C) of the oxide semiconductor layer being exposed, and the step of supplying oxygen radicals to a channel region of the oxide semiconductor layer.

摘要翻译： 制造薄膜晶体管的方法包括在绝缘基板上形成栅电极（11aa）的步骤，形成栅极绝缘层（12）以覆盖栅极（11aa）的步骤，然后形成氧化物 在栅绝缘层（12）上的半导体层（13a），通过干蚀刻在氧化物半导体层（13a）上形成源电极（16aa）和漏电极（16b）的步骤，具有沟道区（C） 的氧化物半导体层露出的步骤，以及向氧化物半导体层的沟道区域供给氧自由基的步骤。

公开(公告)号：US20130019647A1

公开(公告)日：2013-01-24

申请号：US13639198

申请日：2011-04-06

申请人： Tsuyoshi Inoue ,  Yasuyuki Muramatsu

发明人： Tsuyoshi Inoue ,  Yasuyuki Muramatsu

IPC分类号： B21B45/02

CPC分类号： B05B12/084 ,  B21B27/10 ,  B21B37/32 ,  B21B2267/10 ,  F16N7/34

摘要： Equipment for supplying lubricant for a rolling mill 20 of a rolling mill of a flat shaped metal material M comprises a plurality of spray nozzles 1a and 1b which spray a lubricant toward a rolling roll together with a gas in a particulate or atomized state, a lubricant feed device 2, 3, and 4 which feeds the spray nozzles a lubricant, and a gas feed device 5 and 6 which feeds the spray nozzles a gas. In the present invention, the amount of lubricant supplied from the side spray nozzles among the spray nozzles are made larger than the lubricant feed rate from the center spray nozzle. Further, the amount of lubricant supplied from the spray nozzles between these side spray nozzles and center spray nozzle are made not more than the amount of lubricant supplied from the side spray nozzles and not less than the lubricant feed rate from the center spray nozzle. Due to this, uneven wear and roughness is kept from occurring at the rolling roll in the axial direction of the rolling roll.

摘要翻译： 用于为平板状金属材料M的轧机的轧机20供给润滑剂的设备包括多个喷雾嘴1a和1b，其将喷射润滑剂与颗粒状或雾化状态的气体一起滚动到轧辊上，润滑剂 供给装置2,3和4，其将喷嘴喷入润滑剂;以及气体供给装置5和6，其向喷嘴喷射气体。 在本发明中，从喷雾喷嘴的侧喷嘴供给的润滑剂的量比从中心喷嘴的润滑剂供给量大。 此外，从这些侧喷嘴和中心喷嘴之间的喷嘴供应的润滑剂的量不大于从侧喷嘴供应的润滑剂的量，并且不小于来自中心喷嘴的润滑剂进料速率。 由此，轧制辊在轧制辊的轴向上不发生不均匀的磨损和粗糙度。

公开(公告)号：US20120280441A1

公开(公告)日：2012-11-08

申请号：US13516632

申请日：2010-12-15

申请人： Tsuyoshi Inoue

发明人： Tsuyoshi Inoue

IPC分类号： B60G11/42

CPC分类号： F16F9/54 ,  B60G13/003 ,  B60G15/067 ,  B60G2204/128 ,  B60G2204/418 ,  B60G2206/013 ,  B60G2206/41 ,  B60G2206/82 ,  B60G2206/91 ,  F16F1/38

摘要： Disclosed is a strut mount wherein an inclination of an outer circumferential surface of an outer cylinder (2) with respect to the central axis of the outer cylinder (2) is greater than that of an inner circumferential surface of a tapered sidewall (12) of a vehicle body panel (10) which is shaped like an inverted dish. When the strut mount is positioned to be fitted to the vehicle body panel (10), the elastic member (4) is brought into contact with the inner surface of the vehicle body panel (10) only at a portion (4a) of the elastic member (4) that covers the outer circumferential surface of the outer cylinder (2).

摘要翻译： 公开了一种支柱安装件，其中外筒（2）的外圆周表面相对于外筒（2）的中心轴线的倾斜度大于锥形侧壁（12）的内圆周表面的倾斜度 车身板（10），其形状类似于倒盘。 当支柱安装件被定位成装配到车体面板（10）时，弹性构件（4）仅在弹性构件（4）的部分（4a）处与车身面板（10）的内表面接触 构件（4），其覆盖外筒（2）的外周面。

公开(公告)号：US08091212B2

公开(公告)日：2012-01-10

申请号：US12147013

申请日：2008-06-26

申请人： Hidetake Kikuchi ,  Toshihiko Terashita ,  Tsuyoshi Inoue ,  Takashi Kawamura

发明人： Hidetake Kikuchi ,  Toshihiko Terashita ,  Tsuyoshi Inoue ,  Takashi Kawamura

IPC分类号： H01H11/00 ,  H01H65/00

CPC分类号： H01H13/48 ,  H01H13/88 ,  H01H2205/026 ,  H01H2215/036 ,  H01H2229/02 ,  H01H2229/034 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T156/108

摘要： A method of manufacturing a panel switch is provided. The panel switch includes insulating films and a base layer having a stationary contact. Each insulating film includes an adhesive layer, and an apex portion of a moving contact adhered to the adhesive layer. The insulating films are aligned and adhered on top of each other and the adhered insulating films are aligned and adhered to the base layer such that the locations of the moving contacts of the respective insulating films align with the stationary contact of the base layer. The method includes applying an adhesive layer to an insulating film; adhering a moving contact onto the adhesive layer; aligning the moving contact with a stationary contact of a base member and adhering the insulating film to the base member; and cutting and removing an excess portion from the insulating film with a laser.

摘要翻译： 提供一种制造面板开关的方法。 面板开关包括绝缘膜和具有固定触点的基底层。 每个绝缘膜包括粘合剂层和粘附到粘合剂层的可移动接触的顶点部分。 绝缘膜对准并粘附在彼此之上，并且粘附的绝缘膜对准并粘附到基底层，使得各个绝缘膜的可移动触点的位置与基底层的固定触点对准。 该方法包括将粘合剂层施加到绝缘膜上; 将移动的接触粘附到粘合剂层上; 将可移动接触件与基座部件的固定接触件对准，并将绝缘膜粘合到基部部件上; 并用激光从绝缘膜切割并除去多余的部分。