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    PLETHYSMOGRAM SENSOR
    1.
    发明申请
    PLETHYSMOGRAM SENSOR 审中-公开
    PLETHYSMOGRAM传感器

    公开(公告)号：US20120016245A1

    公开(公告)日：2012-01-19

    申请号：US13181950

    申请日：2011-07-13

    申请人： Daisuke Niwa ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Tsuyoshi Satomi

    发明人： Daisuke Niwa ,  Koji Terumoto ,  Kazuhiro Oguchi ,  Tsuyoshi Satomi

    IPC分类号： A61B6/00

    CPC分类号： A61B5/6826 ,  A61B5/02007 ,  A61B5/02427 ,  A61B5/14552

    摘要： The plethysmogram sensor disclosed in this specification includes a light emitting portion whose output is variable, a light receiving portion to detect a light emitted from the light emitting portion and penetrates a living body of a measured person, and a processing unit to acquire information about the plethysmogram of the measured person based on a measured value provided from the light receiving portion.

    摘要翻译： 本说明书中公开的体积描记传感器包括输出可变的发光部，检测从发光部射出的光并穿透被测人的生物的光接收部，以及处理部， 基于从光接收部提供的测量值来测量的人的体积描记图。

    METHOD FOR FORMING A BORON-CONTAINING THIN FILM AND MULTILAYER STRUCTURE
    3.
    发明申请
    METHOD FOR FORMING A BORON-CONTAINING THIN FILM AND MULTILAYER STRUCTURE 审中-公开
    形成含硼薄膜和多层结构的方法

    公开(公告)号：US20110287270A1

    公开(公告)日：2011-11-24

    申请号：US13125767

    申请日：2009-10-22

    申请人： Naoaki Tsurumi ,  Yasuhiko Ito ,  Manabu Tokushige ,  Tsuyoshi Satomi ,  Tokujiro Nishikiori ,  Hiroyuki Tsujimura

    发明人： Naoaki Tsurumi ,  Yasuhiko Ito ,  Manabu Tokushige ,  Tsuyoshi Satomi ,  Tokujiro Nishikiori ,  Hiroyuki Tsujimura

    IPC分类号： B32B15/04 ,  H01G4/30 ,  C25D3/66 ,  H01L27/12

    CPC分类号： H01G4/12 ,  C25D3/66 ,  C25D5/18 ,  C25D9/04 ,  Y10T428/31678

    摘要： To provide a method for forming a boron-containing thin film, by which a uniform boron thin film with good adhesion can be formed on the surface of a processing object, and also to provide a multilayer structure. An electrolysis apparatus includes an anode 1, a processing object 2 serving as a cathode, an electrolytic vessel 4, and a molten salt electrolytic bath 5. A variable power supply 6 is connected between the anode 1 and the processing object 2. The variable power supply 6 is configured to be capable of changing a voltage or current waveform during the electrolysis process. Current of an appropriate pulse waveform is applied in the molten salt for electrolysis to form a uniform boron thin film 3 within the processing object 2 having a complicated shape.

    摘要翻译： 提供一种形成含硼薄膜的方法，通过该方法可以在加工对象的表面上形成具有良好粘合性的均匀的硼薄膜，并且还提供多层结构。 电解装置包括阳极1，用作阴极的处理对象2，电解容器4和熔盐电解槽5.可变电源6连接在阳极1和处理对象2之间。可变功率 电源6被配置为能够在电解过程期间改变电压或电流波形。 在用于电解的熔融盐中施加适当脉冲波形的电流，以在具有复杂形状的处理对象2内形成均匀的硼薄膜3。