公开(公告)号：US20130008605A1

公开(公告)日：2013-01-10

申请号：US13620654

申请日：2012-09-14

申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC分类号： H01L21/3065

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

公开(公告)号：US08336488B2

公开(公告)日：2012-12-25

申请号：US11961718

申请日：2007-12-20

申请人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

发明人： Aihua Chen ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

IPC分类号： C23C16/505

CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

公开(公告)号：US20090139453A1

公开(公告)日：2009-06-04

申请号：US11961718

申请日：2007-12-20

申请人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

发明人： AIHUA CHEN ,  Yijun Liu ,  Jinyuan Chen ,  Lee Luo ,  Tuqiang Ni ,  Gerald Yin ,  Henry Ho

IPC分类号： C23C16/505

CPC分类号： C23C16/54 ,  C23C16/36 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

摘要： A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.

摘要翻译： 等离子体室被构造成具有在其中限定多个处理站的室主体。 多个旋转基板保持器各自位于一个处理站中，并且多个原位等离子体产生区域分别设置在一个基板保持器的上方。 多个准远程等离子体产生区域分别设置在相应的原位等离子体产生区域的上方并与相应的原位等离子体产生区域气态连通。 RF能量源耦合到准远程等离子体产生区域中的每一个。

公开(公告)号：US20080251207A1

公开(公告)日：2008-10-16

申请号：US11739785

申请日：2007-04-25

申请人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

发明人： Jinyuan Chen ,  Gerald Yin ,  Xueyu Qian ,  Tuqiang Ni ,  Hiroshi Iizuka

IPC分类号： H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32174 ,  H03H7/46 ,  H03H11/34

摘要： An RF power supplier is provided, that enables multiple-frequency RF power. The system uses N RF signal generators, combines the RF signals, amplify the combined signals, and then separates the amplified signal. The output of the system is then a multiple-frequency RF power. Optionally, the frequencies are switchable, so that one may select which frequencies the system outputs.

摘要翻译： 提供了RF电源，可实现多频RF功率。 该系统使用N个RF信号发生器，组合RF信号，放大组合信号，然后分离放大的信号。 然后系统的输出是多频RF功率。 可选地，频率是可切换的，使得可以选择系统输出的频率。

公开(公告)号：US20070044915A1

公开(公告)日：2007-03-01

申请号：US11467449

申请日：2006-08-25

申请人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

发明人： Tuqiang Ni ,  Wenli Collison ,  David Hemker ,  Lumin Li

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23F4/00 ,  G03F7/427

摘要： A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

摘要翻译： 真空等离子体处理器包括屋顶结构，该屋顶结构包括介电窗口，所述介电窗口承载（1）具有高导电性的半导体板，因此其用作电极，（2）空心线圈和（3）至少一个电屏蔽。 屏蔽线圈和半导体板被定位成防止实质的线圈产生的电场分量入射在半导体板上。 在第一间隔期间，线圈产生RF电磁场，其产生从半导体晶片剥离光致抗蚀剂的等离子体。 在第二间隔期间，半导体板和另一个电极产生RF电磁场，其产生等离子体，其从晶片蚀刻电层，底层和光致抗蚀剂层。

公开(公告)号：US06503766B1

公开(公告)日：2003-01-07

申请号：US09605562

申请日：2000-06-27

申请人： Tuqiang Ni

发明人： Tuqiang Ni

IPC分类号： G01R3126

CPC分类号： B24B37/013 ,  B24B21/04 ,  B24B37/042 ,  B24B49/12 ,  G01N17/00

摘要： The preferred embodiments described below include a method and system for detecting an exposure of a material on a semiconductor wafer during chemical-mechanical polishing. The semiconductor wafer comprises a first surface and a second surface. A first material is exposed at the first surface and underlies a second material. In one preferred embodiment, a light source transmits light at the second surface of the semiconductor wafer during the polishing of the first surface of the semiconductor wafer. The second material at least partially allows the transmitted light to reach the first material, and the first material at least partially reflects the transmitted light. The amount of light reflected from the semiconductor wafer is monitored by a detector, and the change in the amount of reflected light indicates an exposure of the second material at the first surface of the semiconductor wafer. Instead of being opposite the second surface of the wafer, the light source and detector can be positioned opposite the first surface of the wafer. Alternatively, the wafer can be positioned between the light source and the detector. Other alternatives are described herein.

摘要翻译： 下面描述的优选实施例包括用于在化学机械抛光期间检测半导体晶片上的材料的曝光的方法和系统。 半导体晶片包括第一表面和第二表面。 第一材料在第一表面暴露并且在第二材料的下面。 在一个优选实施例中，在半导体晶片的第一表面的抛光期间，光源在半导体晶片的第二表面透光。 第二材料至少部分地允许透射光到达第一材料，并且第一材料至少部分地反射透射光。 由检测器监测从半导体晶片反射的光的量，反射光量的变化表示第二材料在半导体晶片的第一表面的曝光。 代替与晶片的第二表面相对，光源和检测器可以定位成与晶片的第一表面相对。 或者，晶片可以位于光源和检测器之间。 本文描述了其它替代方案。

公开(公告)号：US06465159B1

公开(公告)日：2002-10-15

申请号：US09340743

申请日：1999-06-28

申请人： Tuqiang Ni ,  Nancy Tran

发明人： Tuqiang Ni ,  Nancy Tran

IPC分类号： G03F736

CPC分类号： H01L21/31138 ,  H01L21/76802 ,  H01L21/76831

摘要： A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.

摘要翻译： 如本文所公开的，用于蚀刻半导体器件上的有机低k绝缘层的可靠方法包括将具有有机绝缘层的衬底和具有孔径的覆盖掩模层引入到处理室中。 然后在室内从氧化气体和钝化气体中形成等离子体。 钝化气体优选为含硅气体或含硼气体，或二者均为。 氧化气体与钝化气体的比率优选为10:1以上。 此外，可以提供惰性载气。 然后使用等离子体通过掩模层蚀刻有机绝缘层，从而在有机低k绝缘层中形成具有基本上垂直的侧壁的通孔。

公开(公告)号：US06257168B1

公开(公告)日：2001-07-10

申请号：US09346564

申请日：1999-06-30

申请人： Tuqiang Ni ,  Wenli Collison

发明人： Tuqiang Ni ,  Wenli Collison

IPC分类号： C23C1600

CPC分类号： H01J37/32623 ,  H01J37/32642 ,  Y10S156/915

摘要： A plasma processing reactor for processing a semiconductor substrate is disclosed. The apparatus includes a chamber. Additionally, the chamber includes a bottom electrode that is configured for holding the substrate. The apparatus further includes a stationary uniformity ring that is configured to surround the periphery of the substrate. Furthermore, the stationary uniformity ring is coupled to a portion of the chamber and disposed above the bottom electrode in a spaced apart relationship to form a vertical space above the bottom electrode. Further, the vertical space is configured to provide room for ingress and egress of the substrate. Also, the stationary uniformity ring has a thickness that substantially reduces diffusion of a first species from outside the stationary uniformity ring toward an edge of the substrate.

摘要翻译： 公开了一种用于处理半导体衬底的等离子体处理反应器。 该装置包括一个室。 此外，腔室包括被配置为保持衬底的底部电极。 该装置还包括固定均匀环，其被配置为围绕基底的周边。 此外，静止均匀环耦合到室的一部分并以间隔开的关系设置在底部电极上方，以在底部电极上方形成垂直空间。 此外，垂直空间被配置为提供衬底的进入和流出的空间。 此外，固定均匀性环具有基本上减少第一种类从固定均匀环外部朝向衬底边缘的扩散的厚度。

公开(公告)号：US09095038B2

公开(公告)日：2015-07-28

申请号：US13337248

申请日：2011-12-26

申请人： Shi Gang ,  Songlin Xu ,  TuQiang Ni

发明人： Shi Gang ,  Songlin Xu ,  TuQiang Ni

IPC分类号： C23F1/00 ,  H05H1/30 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H05H1/30 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/3065

摘要： An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

摘要翻译： ICP等离子体反应器，其具有外壳，其中天花板的至少一部分形成电介质窗。 衬底支撑件位于电介质窗口下方的外壳内。 RF功率施加器位于电介质窗口上方，以通过介电窗口辐射RF功率并进入外壳。 多个气体喷射器均匀地分布在基板支撑件上方，以将处理气体供应到外壳中。 圆形挡板位于外壳内部，并且位于衬底支撑件的上方，但位于多个气体喷射器下方，以便改变处理气体的流动。

公开(公告)号：US08366829B2

公开(公告)日：2013-02-05

申请号：US11772726

申请日：2007-07-02

申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.