公开(公告)号：US07459404B2

公开(公告)日：2008-12-02

申请号：US11405852

申请日：2006-04-18

申请人： Lihua Li ,  Tzu-Fang Huang ,  Jerry Sugiarto, legal representative ,  Li-Qun Xia ,  Peter Wai-Man Lee ,  Hichem M'Saad ,  Zhenjiang Cui ,  Sohyun Park

发明人： Dian Sugiarto

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31633 ,  C23C16/02 ,  C23C16/325 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

摘要翻译： 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供一种处理基板的方法，包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室，产生氧化气体的等离子体和有机硅化合物，形成 在至少包含硅和碳的阻挡层上的起始层，以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中，以及沉积与第 电介质起始层。

公开(公告)号：US07115508B2

公开(公告)日：2006-10-03

申请号：US10816606

申请日：2004-04-02

申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US20060171653A1

公开(公告)日：2006-08-03

申请号：US11047785

申请日：2005-02-01

申请人： Alexandros Demos ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Wen Zhu

发明人： Alexandros Demos ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Wen Zhu

IPC分类号： G02B6/00

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02271 ,  H01L21/02351 ,  H01L21/31633 ,  H01L21/76825

摘要： According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.

公开(公告)号：US20050260864A1

公开(公告)日：2005-11-24

申请号：US10765361

申请日：2004-01-27

申请人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David Cheung ,  Ralf Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad Moghadam ,  Yeming Ma

发明人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David Cheung ,  Ralf Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad Moghadam ,  Yeming Ma

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

摘要： A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

摘要翻译： 氧化硅层通过有机硅化合物的等离子体增强分解产生，以沉积碳原子量至少为1％的膜。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US20050042885A1

公开(公告)日：2005-02-24

申请号：US10645675

申请日：2003-08-20

申请人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

发明人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/5096 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

公开(公告)号：US06593247B1

公开(公告)日：2003-07-15

申请号：US09553461

申请日：2000-04-19

申请人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

发明人： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

IPC分类号： H01L2131

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm2 and about 3.2 W/cm2. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH3)3SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

摘要翻译： 氧化硅层通过有机硅化合物的等离子体增强氧化制备，以沉积碳原子量至少为1％的膜。 通过以小于或等于有机硅化合物的流速的流量将氧引入处理室，并且以0.9W / cm 2的功率密度产生等离子体来沉积具有低水分含量和耐开裂性的膜 和约3.2W / cm 2。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 有机硅化合物优选与每个硅原子键合2或3个碳原子，例如三甲基硅烷，（CH 3）3 SiH。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US20180052487A1

公开(公告)日：2018-02-22

申请号：US15641305

申请日：2017-07-04

申请人： Chia-Chi Lin ,  Wei-Hao Lan ,  Tsai-Yu Lin ,  Jyh-Chyang Tzou ,  Hsin Yeh ,  Tzu-Fang Huang

发明人： Chia-Chi Lin ,  Wei-Hao Lan ,  Tsai-Yu Lin ,  Jyh-Chyang Tzou ,  Hsin Yeh ,  Tzu-Fang Huang

IPC分类号： G06F1/16

CPC分类号： G06F1/1615 ,  G06F1/1624 ,  G06F1/1626 ,  G06F1/1656 ,  G06F1/166

摘要： An electronic device includes a body, a stand and a sliding member. The stand is rotatably connected to the body. The sliding member is slidably disposed on the body and has at least one stopping portion and at least one pushing portion. When the sliding member is located at a first position, the stopping portion interferes with the stand to stop the stand from expanding from the body. When the sliding member slides relative to the body to be away from the first position, the stopping portion releases the stand and the pushing portion pushes the stand to drive the stand to rotate and expand from the body.

公开(公告)号：US07700486B2

公开(公告)日：2010-04-20

申请号：US11424723

申请日：2006-06-16

申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44 ,  G01F7/00

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US07588803B2

公开(公告)日：2009-09-15

申请号：US11047785

申请日：2005-02-01

申请人： Alexandros T. Demos ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Wen H. Zhu

发明人： Alexandros T. Demos ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Wen H. Zhu

IPC分类号： B05D3/06 ,  C08J7/18 ,  C23C14/30 ,  G21G1/10 ,  H01L21/00

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02271 ,  H01L21/02351 ,  H01L21/31633 ,  H01L21/76825

摘要： According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.

摘要翻译： 根据本发明的一个实施例，一种修改电介质层的机械，物理和/或电学性能的方法包括：以第一能级将介电层暴露于第一剂量的电子束辐射; 之后，在不同于第一能级的第二能级处将电介质层暴露于第二剂量的电子束辐射。

公开(公告)号：US20080145998A1

公开(公告)日：2008-06-19

申请号：US11531493

申请日：2006-09-13

申请人： GERARDO A. DELGADINO ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

发明人： GERARDO A. DELGADINO ,  Yan Ye ,  Neungho Shin ,  Yunsang Kim ,  Li-Qun Xia ,  Tzu-Fang Huang ,  Lihua Li Huang ,  Joey Chiu ,  Xiaoye Zhao ,  Fang Tian ,  Wen Zhu ,  Ellie Yieh

IPC分类号： H01L21/76

CPC分类号： H01L21/76826 ,  H01L21/76811 ,  H01L21/76813

摘要： A method of fabricating an interconnect structure comprising etching a via into an upper low K dielectric layer and into a hardened portion of a lower low K dielectric layer. The via is defined by a pattern formed in a photoresist layer. The photoresist layer is then stripped, and a trench that circumscribes the via as defined by a hard mask is etched into the upper low K dielectric layer and, simultaneously, the via that was etched into the hardened portion of the lower low K dielectric layer is further etched into the lower low K dielectric layer. The result is a low K dielectric dual damascene structure.

摘要翻译： 一种制造互连结构的方法，包括将通孔蚀刻到上部低K电介质层中并进入下部低K电介质层的硬化部分。 通孔由形成在光致抗蚀剂层中的图案限定。 然后剥离光致抗蚀剂层，并且将由硬掩模限定的通孔的沟槽蚀刻到上部低K电介质层中，并且同时蚀刻到下部低K电介质层的硬化部分中的通孔是 进一步蚀刻到下部低K介电层中。 结果是低K电介质双镶嵌结构。