PARALLEL SENSING AND DEMODULATION SYSTEMS FOR ACOUSTIC WAVES BASED ON DUAL OPTICAL FREQUENCY COMBS

    公开(公告)号:US20250027808A1

    公开(公告)日:2025-01-23

    申请号:US18774967

    申请日:2024-07-17

    Abstract: Embodiments of the present disclosure relate to the field of acoustic sensing demodulation with high signal-to-noise ratio, real-time demodulation, and high sensitivity, and in particular, to a parallel sensing and demodulation system for acoustic waves based on dual optical frequency combs. The present disclosure introduces dual optical frequency combs as multi-path parallel input light sources, leveraging features of the dual optical frequency combs including narrow linewidth, stable power, high sensitivity, and the capability of precisely converting signals from the optical domain to the radio frequency domain, so the dual optical frequency combs can be used as multi-channel parallel input light sources for acoustic array detection. Besides, some embodiments of the present disclosure employ three-wavelength adaptive demodulation technology to ensure that the detection of acoustic wave signals at every moment has a high signal-to-noise ratio and improved sensitivity for detecting weak signals.

    Lateral power semiconductor device

    公开(公告)号:US12027577B2

    公开(公告)日:2024-07-02

    申请号:US17351267

    申请日:2021-06-18

    CPC classification number: H01L29/063 H01L29/0878 H01L29/66681 H01L29/7816

    Abstract: A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.

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