Methods and apparatus for inspection of articles, EUV lithography reticles, lithography apparatus and method of manufacturing devices
    2.
    发明授权
    Methods and apparatus for inspection of articles, EUV lithography reticles, lithography apparatus and method of manufacturing devices 有权
    用于检查制品的方法和装置,EUV光刻掩模版,光刻装置和制造装置的方法

    公开(公告)号:US09488922B2

    公开(公告)日:2016-11-08

    申请号:US13883083

    申请日:2011-10-06

    摘要: An EUV lithography reticle is inspected to detect contaminant particles. The inspection apparatus comprises illumination optics with primary radiation. An imaging optical system with plural branches is arranged to form and detect a plurality of images, each branch having an image sensor and forming its image with a different portion of radiation received from the illuminated article. A processor combines information from the detected images to report on the presence and location of contaminant particles. In one or more branches the primary radiation is filtered out, so that the detected image is formed using only secondary radiation emitted by contaminant material in response to the primary radiation. In a dark field imaging branch using the scattered primary radiation, a spatial filter blocks spatial frequency components associated with periodic features of the article under inspection, to allow detection of particles which cannot be detected by secondary radiation.

    摘要翻译: 检查EUV光刻掩模版以检测污染物颗粒。 检查装置包括具有初级辐射的照明光学器件。 布置具有多个分支的成像光学系统以形成和检测多个图像,每个分支具有图像传感器并且形成具有从照明物品接收的辐射的不同部分的图像。 处理器结合来自检测图像的信息,报告污染物颗粒的存在和位置。 在一个或多个分支中,主辐射被滤出,使得仅使用由污染物材料响应于初级辐射发射的二次辐射形成检测到的图像。 在使用散射的初级辐射的暗场成像分支中,空间滤波器阻挡与被检查物品的周期特征相关联的空间频率分量,以允许检测不能被二次辐射检测的颗粒。