公开(公告)号：US09378930B2

公开(公告)日：2016-06-28

申请号：US12717916

申请日：2010-03-04

申请人： Michael N. Grimbergen ,  Alan Hiroshi Ouye ,  Valentin N. Todorow

发明人： Michael N. Grimbergen ,  Alan Hiroshi Ouye ,  Valentin N. Todorow

IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01L21/67069

摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

公开(公告)号：US08773020B2

公开(公告)日：2014-07-08

申请号：US13097800

申请日：2011-04-29

申请人： Gary Leray ,  Shahid Rauf ,  Valentin N. Todorow

发明人： Gary Leray ,  Shahid Rauf ,  Valentin N. Todorow

IPC分类号： G21K1/093 ,  H01J37/32 ,  H05H1/04

CPC分类号： H01J37/321 ,  H01J37/32669

摘要： Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils.

摘要翻译： 本文提供了形成磁场的装置及其使用方法。 在一些实施例中，具有基本相似的尺寸的多个线圈以围绕处理室的中心轴线为中心的对称图案围绕处理室布置，其中多个线圈被配置为产生具有多个磁场线的磁场 其基本上是平面的并且基本上平行。 在一些实施例中，多个线圈包括围绕处理室布置的八个线圈，其中八个线圈中的每一个与八个线圈的相应相邻线圈相距大约45度的角度偏移。

公开(公告)号：US08075728B2

公开(公告)日：2011-12-13

申请号：US12038887

申请日：2008-02-28

申请人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

发明人： Ajit Balakrishna ,  Shahid Rauf ,  Andrew Nguyen ,  Michael D. Willwerth ,  Valentin N. Todorow

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.

摘要翻译： 提供流量均衡器板用于衬底处理室。 流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。 内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。 在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

公开(公告)号：US20110068082A1

公开(公告)日：2011-03-24

申请号：US12954087

申请日：2010-11-24

申请人： Dan Katz ,  David Palagashvili ,  Michael D. Willwerth ,  Valentin N. Todorow ,  Alexander M. Paterson

发明人： Dan Katz ,  David Palagashvili ,  Michael D. Willwerth ,  Valentin N. Todorow ,  Alexander M. Paterson

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/3065

摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.

摘要翻译： 本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

公开(公告)号：US20090275206A1

公开(公告)日：2009-11-05

申请号：US12143146

申请日：2008-06-20

申请人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

发明人： Dan Katz ,  David Palagashvili ,  Brian K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449

摘要： A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge.

摘要翻译： 钝化物质前体气体以第一流速被提供到内部区域，同时以蚀刻剂物质前体气体以第二流速流动环形中间区域。 蚀刻速率的径向分布由第一和第二流速的比率控制。 蚀刻临界尺寸偏置在晶片上的径向分布由通向晶片边缘的钝化气体的流速来控制。

公开(公告)号：US20090272492A1

公开(公告)日：2009-11-05

申请号：US12143092

申请日：2008-06-20

申请人： Dan Katz ,  David Palagashvili ,  Brain K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

发明人： Dan Katz ,  David Palagashvili ,  Brain K. Hatcher ,  Theodoros Panagopoulos ,  Valentin N. Todorow ,  Edward P. Hammond, IV ,  Alexander M. Paterson ,  Rodolfo P. Belen

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.

摘要翻译： 用于等离子体反应器的天花板的气体分配组件包括中心供给的轮毂和位于中心供给轮毂下方的相等路径长度的分配气体歧管。

公开(公告)号：US20090156011A1

公开(公告)日：2009-06-18

申请号：US12001986

申请日：2007-12-12

申请人： Rodolfo P. Belen ,  Edward P. Hammond, IV ,  Dan Katz ,  Valentin N. Todorow ,  Brian K. Hatcher ,  Alexander M. Paterson

发明人： Rodolfo P. Belen ,  Edward P. Hammond, IV ,  Dan Katz ,  Valentin N. Todorow ,  Brian K. Hatcher ,  Alexander M. Paterson

IPC分类号： H01L21/3065

CPC分类号： H01L21/32137 ,  H01L22/20

摘要： In a plasma etch process, critical dimension (CD), CD bias and CD bias microloading are controlled independently of plasma process conditions or parameters, such as RF power levels, pressure and gas flow rate, by depressing or elevating the workpiece support pedestal to vary the gap between the workpiece and the chamber ceiling facing the workpiece, using an axially adjustable workpiece support.

摘要翻译： 在等离子体蚀刻工艺中，临时尺寸（CD），CD偏压和CD偏压微载荷独立于等离子体工艺条件或参数（例如RF功率水平，压力和气体流量）被控制，通过按压或升高工件支撑座以改变 使用可轴向调节的工件支撑件，工件与室顶面之间的工件间隙。

公开(公告)号：US20090061544A1

公开(公告)日：2009-03-05

申请号：US11948030

申请日：2007-11-30

申请人： JOHN P. HOLLAND ,  John M. Yamartino ,  Thorsen B. Lill ,  Meihua Shen ,  Alexander Paterson ,  Valentin N. Todorow

发明人： JOHN P. HOLLAND ,  John M. Yamartino ,  Thorsen B. Lill ,  Meihua Shen ,  Alexander Paterson ,  Valentin N. Todorow

IPC分类号： H01L21/66 ,  H01L21/306

CPC分类号： H01L21/32137 ,  H01J37/32935 ,  H01J37/3299 ,  H01L22/26

摘要： A method of controlling a plasma processing according to trajectories connecting start and stop values of parameters controlling the plasma processing, for example, gas flow and power supplied to generate the plasma. The trajectories maybe based on equations including at least time as a variable. At set times within the processing, the values of the parameters are updated according to the predetermined trajectories. Sensors associated with the chamber may also adjust the trajectories, provide variables to the equations, and/or define the trajectories.

摘要翻译： 根据控制等离子体处理的参数的启动和停止值的轨迹控制等离子体处理的方法，例如供应的气体流量和功率以产生等离子体。 轨迹可以基于包括至少时间作为变量的方程式。 在处理期间的设定时间，根据预定的轨迹更新参数的值。 与室相关联的传感器还可以调整轨迹，向等式提供变量，和/或定义轨迹。

公开(公告)号：US06893533B2

公开(公告)日：2005-05-17

申请号：US10697893

申请日：2003-10-29

申请人： John Holland ,  Valentin N. Todorow ,  Michael Barnes

发明人： John Holland ,  Valentin N. Todorow ,  Michael Barnes

IPC分类号： H01J37/32 ,  H05H1/00 ,  C23C16/00 ,  H01J21/00

CPC分类号： H01J37/321

摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.

摘要翻译： 在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。 反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线 并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离 对称轴。 RF等离子体源电源连接在多个导体中的每一个上。

公开(公告)号：US20130118687A1

公开(公告)日：2013-05-16

申请号：US13734532

申请日：2013-01-04

申请人： VALENTIN N. TODOROW ,  John P. Holland ,  Michael D. Willwerth

发明人： VALENTIN N. TODOROW ,  John P. Holland ,  Michael D. Willwerth

IPC分类号： C23F1/08

CPC分类号： C23F4/00 ,  C23F1/08 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/67069

摘要： A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

摘要翻译： 本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。 在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。 将基板放置在基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。