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    Method of preparing an electrically insulating film and application for the metallization of vias
    2.
    发明授权
    Method of preparing an electrically insulating film and application for the metallization of vias 有权
    制备电绝缘膜的方法和金属化通孔的应用

    公开(公告)号：US08119542B2

    公开(公告)日：2012-02-21

    申请号：US12495137

    申请日：2009-06-30

    申请人： Vincent Mevellec ,  José Gonzalez ,  Dominique Suhr

    发明人： Vincent Mevellec ,  José Gonzalez ,  Dominique Suhr

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02118 ,  C25D7/123 ,  C25D13/18 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/312 ,  H01L21/76843 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate.According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometers, and preferably between 80 and 500 nanometers. Application: Metallization of through-vias, especially of 3D integrated circuits.

    摘要翻译： 本发明基本上涉及在诸如硅衬底的电导体或半导体衬底的表面上制备电绝缘膜的方法。 根据本发明，该方法包括：a）使所述表面与包含质子溶剂的液体溶液接触; 至少一种重氮盐; 至少一种可聚合并可溶于所述质子溶剂的单体; 至少一种足够量的酸以通过将所述溶液的pH调节至小于7，优选小于2.5的值来稳定所述重氮盐; b）根据电位或电流脉冲模式的所述表面的极化持续足够长的时间以形成厚度为至少60纳米，优选为80至500纳米的膜。 应用：通孔的金属化，特别是3D集成电路的金属化。

    METHOD FOR PREPARING AN ORGANIC FILM AT THE SURFACE OF A SOLID SUPPORT UNDER NON-ELECTROCHEMICAL CONDITIONS, SOLID SUPPORT THUS OBTAINED AND PREPARATION KIT
    3.
    发明申请
    METHOD FOR PREPARING AN ORGANIC FILM AT THE SURFACE OF A SOLID SUPPORT UNDER NON-ELECTROCHEMICAL CONDITIONS, SOLID SUPPORT THUS OBTAINED AND PREPARATION KIT 有权
    在非电化学条件下在固体支持表面制备有机膜的方法，获得和制备试剂盒的固体支持

    公开(公告)号：US20090117391A1

    公开(公告)日：2009-05-07

    申请号：US11686076

    申请日：2007-03-14

    申请人： Vincent Mevellec ,  Sebastien Roussel

    发明人： Vincent Mevellec ,  Sebastien Roussel

    IPC分类号： B32B17/10 ,  C08L31/00 ,  B32B15/09

    CPC分类号： C09D4/00 ,  C08J7/04 ,  H01L51/0006 ,  Y10T428/31616 ,  Y10T428/31681

    摘要： This invention relates to a method for preparing an organic film at the surface of a solid support, with a step of contacting said surface with a liquid solution including (i) at least one protic solvent, (ii) at least one adhesion primer, and (iii) at least one monomer different from the adhesion primer and radically polymerisable, under non-electrochemical conditions, and allowing the formation of radical entities based on the adhesion primer. This invention also relates to a non-electrically-conductive solid support on which an organic film according to said method is grafted, and a kit for preparing an essentially polymeric organic film at the surface of a solid support.

    摘要翻译： 本发明涉及一种在固体支持物表面制备有机膜的方法，其中使所述表面与液体溶液接触的步骤包括：（i）至少一种质子溶剂，（ii）至少一种粘合底漆和 （iii）至少一种不同于粘合引物的单体，并且在非电化学条件下可自由基聚合，并且允许基于粘合引物形成基团实体。 本发明还涉及一种非导电固体载体，其上接枝有根据所述方法的有机膜，以及用于在固体载体表面制备基本上聚合的有机膜的试剂盒。

    METHOD OF DEPOSITING METALLIC LAYERS BASED ON NICKEL OR COBALT ON A SEMICONDUCTING SOLID SUBSTRATE; KIT FOR APPLICATION OF SAID METHOD
    5.
    发明申请
    METHOD OF DEPOSITING METALLIC LAYERS BASED ON NICKEL OR COBALT ON A SEMICONDUCTING SOLID SUBSTRATE; KIT FOR APPLICATION OF SAID METHOD 有权
    在半导体固体基底上沉积基于镍或钴的金属层的方法; 套用方法

    公开(公告)号：US20140087560A1

    公开(公告)日：2014-03-27

    申请号：US14009485

    申请日：2012-04-18

    申请人： Vincent Mevellec ,  Dominique Suhr

    发明人： Vincent Mevellec ,  Dominique Suhr

    IPC分类号： H01L21/288

    CPC分类号： H01L21/288 ,  C23C18/32 ,  H01L21/76843 ,  H01L21/76898

    摘要： The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions.The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or cobalt; at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.

    摘要翻译： 本发明涉及一种用于在半导体衬底的腔中沉积镍或钴的试剂盒，旨在形成用于在三维集成电路中形成互连的通硅通孔（TSV）。 本发明还涉及这种衬底的绝缘表面的金属化方法，其包括使表面与含有至少一种镍或钴的金属盐的液体水溶液接触; 至少一种还原剂; 至少一种带有聚合物的胺起作用，以及至少一种稳定金属离子的试剂。 获得的镍或钴层的阶梯覆盖率可以大于80％，这有利于随后通过电沉积用铜填充通孔。

    METHOD OF PREPARING AN ELECTRICALLY INSULATING FILM AND APPLICATION FOR THE METALLIZATION OF VIAS
    6.
    发明申请
    METHOD OF PREPARING AN ELECTRICALLY INSULATING FILM AND APPLICATION FOR THE METALLIZATION OF VIAS 有权
    制备电绝缘膜的方法和VIAS金属化的应用

    公开(公告)号：US20100003808A1

    公开(公告)日：2010-01-07

    申请号：US12495137

    申请日：2009-06-30

    申请人： Vincent MEVELLEC ,  José GONZALES ,  Dominique SUHR

    发明人： Vincent MEVELLEC ,  José GONZALES ,  Dominique SUHR

    IPC分类号： H01L21/768 ,  B05D5/12 ,  H01L23/48 ,  H05K1/09

    CPC分类号： H01L21/02118 ,  C25D7/123 ,  C25D13/18 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/312 ,  H01L21/76843 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate.According to the invention, this method comprises: a) bringing said surface into contact with a liquid solution comprising: a protic solvent; at least one diazonium salt; at least one monomer that is chain-polymerizable and soluble in said protic solvent; at least one acid in a sufficient quantity to stabilize said diazonium salt by adjusting the pH of said solution to a value less than 7, preferably less than 2.5; b) the polarization of said surface according to a potentio- or galvano-pulsed mode for a duration sufficient to form a film having a thickness of at least 60 nanometres, and preferably between 80 and 500 nanometres. Application: Metallization of through-vias, especially of 3D integrated circuits.

    摘要翻译： 本发明基本上涉及在诸如硅衬底的电导体或半导体衬底的表面上制备电绝缘膜的方法。 根据本发明，该方法包括：a）使所述表面与包含质子溶剂的液体溶液接触; 至少一种重氮盐; 至少一种可聚合并可溶于所述质子溶剂的单体; 至少一种足够量的酸以通过将所述溶液的pH调节至小于7，优选小于2.5的值来稳定所述重氮盐; b）根据电位或电流脉冲模式的所述表面的极化持续足够长的时间以形成厚度为至少60纳米，优选为80至500纳米的膜。 应用：通孔的金属化，特别是3D集成电路的金属化。

    METHOD FOR REPAIRING COPPER DIFFUSION BARRIER LAYERS ON A SEMICONDUCTOR SOLID SUBSTRATE AND REPAIR KIT FOR IMPLEMENTING THIS METHOD
    8.
    发明申请
    METHOD FOR REPAIRING COPPER DIFFUSION BARRIER LAYERS ON A SEMICONDUCTOR SOLID SUBSTRATE AND REPAIR KIT FOR IMPLEMENTING THIS METHOD 失效
    在半导体固体基板上修复铜扩散阻挡层的方法和用于实施该方法的维修工具

    公开(公告)号：US20110294231A1

    公开(公告)日：2011-12-01

    申请号：US13003451

    申请日：2009-09-07

    申请人： Vincent Mevellec

    发明人： Vincent Mevellec

    IPC分类号： H01L21/02 ,  C09D1/00 ,  B82Y30/00

    CPC分类号： C23C18/1893 ,  C23C18/31 ,  C23C18/34 ,  H01L21/288 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76898

    摘要： Method for repairing copper diffusion barrier layers on a semiconductor solid substrate and repair kit for implementing this method.One subject of the present invention is a method for repairing a surface of a substrate coated with a discontinuous copper diffusion barrier layer of a titanium-based material.According to the invention, this method comprises: a) the contacting of the surface with a suspension containing copper or copper alloy nanoparticles for a time of between 1 s and 15 min; and b) the contacting of the thus treated surface with a liquid solution having a pH of between 8.5 and 12 and containing: at least one metal salt, at least one reducing agent, at least one stabilizer at a temperature of between 50° C. and 90° C., preferably between 60° C. and 80° C., for a time of between 30 s and 10 min, preferably between 1 min and 5 min, in order to thus form a metallic film having a thickness of at least 50 nanometers re-establishing the continuity of the copper diffusion barrier layer.

    摘要翻译： 在半导体固体基板上修复铜扩散阻挡层的方法以及用于实施该方法的修理工具。 本发明的一个主题是用于修复涂覆有钛基材料的不连续铜扩散阻挡层的基板的表面的方法。 根据本发明，该方法包括：a）使表面与含有铜或铜合金纳米颗粒的悬浮液接触1至15分钟; 和b）如此处理的表面与pH为8.5至12的液体溶液的接触，并且在50℃的温度下含有至少一种金属盐，至少一种还原剂，至少一种稳定剂。 90℃，优选60℃至80℃，时间为30秒至10分钟，优选1分钟至5分钟，以便形成厚度为 至少50纳米重新建立铜扩散阻挡层的连续性。

    METHOD FOR PREPARING AN ORGANIC FILM AT THE SURFACE OF A SOLID SUPPORT UNDER NON-ELECTROCHEMICAL CONDITIONS, SOLID SUPPORT THUS OBTAINED AND PREPARATION KIT
    9.
    发明申请
    METHOD FOR PREPARING AN ORGANIC FILM AT THE SURFACE OF A SOLID SUPPORT UNDER NON-ELECTROCHEMICAL CONDITIONS, SOLID SUPPORT THUS OBTAINED AND PREPARATION KIT 有权
    在非电化学条件下在固体支持表面制备有机膜的方法，获得和制备试剂盒的固体支持

    公开(公告)号：US20080152949A1

    公开(公告)日：2008-06-26

    申请号：US11753394

    申请日：2007-05-24

    申请人： Vincent MEVELLEC ,  Sebastien Roussel ,  Serge Palacin

    发明人： Vincent MEVELLEC ,  Sebastien Roussel ,  Serge Palacin

    IPC分类号： B05D3/02 ,  B32B9/00

    CPC分类号： C09D4/00 ,  C08J7/04 ,  H01L51/0006 ,  H01L51/0075

    摘要： This invention relates to a method for preparing an organic film at the surface of a solid support, with a step of contacting said surface with a liquid solution including (i) at least one protic solvent, (ii) at least one adhesion primer, and (iii) at least one monomer different from the adhesion primer and radically polymerisable, under non-electrochemical conditions, and allowing the formation of radical entities based on the adhesion primer. This invention also relates to a non-electrically-conductive solid support on which an organic film according to said method is grafted, and a kit for preparing an essentially polymeric organic film at the surface of a solid support.

    摘要翻译： 本发明涉及一种在固体支持物表面制备有机膜的方法，其中使所述表面与液体溶液接触的步骤包括：（i）至少一种质子溶剂，（ii）至少一种粘合底漆和 （iii）至少一种不同于粘合引物的单体，并且在非电化学条件下可自由基聚合，并且允许基于粘合引物形成基团实体。 本发明还涉及一种非导电固体载体，其上接枝有根据所述方法的有机膜，以及用于在固体载体表面制备基本上聚合的有机膜的试剂盒。

    Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method
    10.
    发明授权
    Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method 有权
    在半导体固体基材上沉积基于镍或钴的金属层的方法; 适用于所述方法的试剂盒

    公开(公告)号：US09190283B2

    公开(公告)日：2015-11-17

    申请号：US14009485

    申请日：2012-04-18

    申请人： Vincent Mevellec ,  Dominique Suhr

    发明人： Vincent Mevellec ,  Dominique Suhr

    IPC分类号： H01L21/288 ,  C23C18/32

    CPC分类号： H01L21/288 ,  C23C18/32 ,  H01L21/76843 ,  H01L21/76898

    摘要： The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions.The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or cobalt; at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.

    摘要翻译： 本发明涉及一种用于在半导体衬底的空腔中沉积镍或钴的试剂盒，旨在形成用于在三维集成电路中形成互连的通硅通孔（TSV）。 本发明还涉及这种衬底的绝缘表面的金属化方法，其包括使表面与含有至少一种镍或钴的金属盐的液体水溶液接触; 至少一种还原剂; 至少一种带有聚合物的胺起作用，以及至少一种稳定金属离子的试剂。 获得的镍或钴层的阶梯覆盖率可以大于80％，这有利于随后通过电沉积用铜填充通孔。