公开(公告)号：US6103601A

公开(公告)日：2000-08-15

申请号：US330247

申请日：1999-06-10

Applicant: Peter W. Lee ,  Stuardo Robles ,  Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma

Inventor： Peter W. Lee ,  Stuardo Robles ,  Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma

IPC: H01L21/768 ,  C23C16/40 ,  C23C16/56 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L23/522 ,  H01L21/425 ,  H01L21/469

CPC classification number: H01L21/02131 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31629

Abstract: A fluorine-doped silicate glass (FSG) layer having a low dielectric constant and a method of forming such an insulating layer is described. The FSG layer is treated with a post-treatment step to make the layer resistant to moisture absorption and outgassing of fluorine atoms. In one embodiment, the post-treatment step includes forming a thin, undoped silicate glass layer on top of the FSG layer, and in another embodiment, the stability of the FSG film is increased by a post-treatment plasma step.

Abstract translation: 描述了具有低介电常数的氟掺杂硅酸盐玻璃（FSG）层和形成这种绝缘层的方法。 FSG层通过后处理步骤进行处理，以使该层对氟原子的吸湿和除气有抵抗作用。 在一个实施方案中，后处理步骤包括在FSG层的顶部上形成薄的未掺杂的硅酸盐玻璃层，在另一个实施方案中，通过后处理等离子体步骤来增加FSG膜的稳定性。

公开(公告)号：US5292554A

公开(公告)日：1994-03-08

申请号：US975251

申请日：1992-11-12

Applicant: Ashok K. Sinha ,  Steve G. Ghanayem ,  Virendra V. S. Rana

Inventor： Ashok K. Sinha ,  Steve G. Ghanayem ,  Virendra V. S. Rana

IPC: C30B25/12 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  C30B25/14 ,  H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  H01L21/687 ,  C23C16/00

CPC classification number: C23C16/45519 ,  C23C16/4401 ,  C23C16/45591 ,  C23C16/54 ,  H01L21/68721

Abstract: In a deposition apparatus, a barrier is used to separate a process gas section from the section of the chamber below the substrate on which a metal layer is deposited. The substrate is supported on a support. During an unloading stage, purge gas is introduced into the chamber below the substrate. To prevent the substrate from being moved on the support by the purge gas, the barrier is perforated so that the process gas can flow through the barrier and into a vacuum manifold system.

Abstract translation: 在沉积设备中，使用阻挡层将工艺气体部分与沉积有金属层的衬底下面的腔室部分分开。 基板支撑在支撑件上。 在卸载阶段，吹扫气体被引入基板下面的室中。 为了防止衬底通过吹扫气体在支撑体上移动，屏障被穿孔，使得工艺气体可以流过阻挡层并进入真空歧管系统。

公开(公告)号：US5227335A

公开(公告)日：1993-07-13

申请号：US517973

申请日：1990-04-30

Applicant: Lowell H. Holschwandner ,  Virendra V. S. Rana

Inventor： Lowell H. Holschwandner ,  Virendra V. S. Rana

IPC: H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/76886 ,  H01L21/32051

Abstract: The adhesion of tungsten to an underlying dielectric layer is improved by the use of a thin glue layer of either TiN or Al.

Abstract translation: 通过使用TiN或Al的薄胶层来改善钨对下面的介电层的附着力。

公开(公告)号：US5141897A

公开(公告)日：1992-08-25

申请号：US701569

申请日：1991-05-14

Applicant: Ajit S. Manocha ,  Virendra V. S. Rana

Inventor： Ajit S. Manocha ,  Virendra V. S. Rana

IPC: H01L21/3213 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76849 ,  H01L21/32133 ,  H01L21/76841 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10S438/97

Abstract: An integrated circuit and method of fabrication are disclosed. The invention provides an etch-stop layer between a plug formed in a via and an overlying runner. The etch stop layer serves a variety of functions, including protecting the plug during the etching process which defines the runner.

Abstract translation: 公开了一种集成电路和制造方法。 本发明提供了形成在通孔中的塞子和上覆流道之间的蚀刻停止层。 蚀刻停止层用于各种功能，包括在限定流道的蚀刻过程中保护塞子。

公开(公告)号：US4146379A

公开(公告)日：1979-03-27

申请号：US827279

申请日：1977-08-24

Applicant: Stephen M. Copley ,  Virendra V. S. Rana ,  James M. Whelan

Inventor： Stephen M. Copley ,  Virendra V. S. Rana ,  James M. Whelan

IPC: C04B35/053 ,  C04B35/515 ,  C04B35/64 ,  C04B38/00 ,  C03B23/20 ,  C03C3/22 ,  C03C15/00

CPC classification number: C04B35/515 ,  C04B35/053 ,  C04B35/64 ,  C04B38/00 ,  Y10S501/904

Abstract: A polycrystalline article is densified to provide either a nonporous body or a body with controlled interconnected porosity. A mixture of fine powders of the polycrystalline material and a sintering aid is compacted and outgassed under reduced pressure. The outgassed compact is then subjected to a permeation anneal step in which it is heated in a closed chamber to a temperature sufficient to form a liquid of the sintering aid, but under pressure conditions which inhibit evaporation of the sintering aid. The sintering aid can then be leached out to provide a densified article having interconnected porosity. Alternatively, the sintering aid can be leached out at elevated temperature, further densifying the compact to form a substantially nonporous body. Alternatively, the sintering aid can be removed by subjecting the densified article to an evaporation anneal step in which the article is heated to evaporate the sintering aid, further densifying the compact to form a substantially nonporous article. Apparatus is provided containing interconnected sections to accomplish the foregoing process. When applied to magnesium fluoride, a transparent polycrystalline body is obtained as a new article of manufacture which is substantially uniformly transparent to infrared radiation throughout the entire range of 0.7-8 microns.

Abstract translation: 多晶制品被致密化以提供具有受控的互连孔隙的无孔体或主体。 将多晶材料和烧结助剂的细粉末的混合物在减压下压实和脱气。 然后将脱气的压块进行渗透退火步骤，其中将其在密闭室中加热到足以形成烧结助剂的液体的温度，但在抑制烧结助剂蒸发的压力条件下进行。 然后可以将烧结助剂浸出以提供具有互连多孔性的致密制品。 或者，可以在升高的温度下将烧结助剂浸出，进一步致密化以形成基本上无孔的体。 或者，可以通过使致密制品经受蒸发退火步骤来除去烧结助剂，其中加热制品以蒸发烧结助剂，进一步致密化以形成基本上无孔的制品。 提供了包含互连部分以实现上述过程的装置。 当应用于氟化镁时，获得透明多晶体作为新的制品，其在0.7-8微米的整个范围内对红外辐射基本均匀透明。

公开(公告)号：US06191026B1

公开(公告)日：2001-02-20

申请号：US08584042

申请日：1996-01-09

Applicant: Virendra V. S. Rana ,  Andrew Conners ,  Anand Gupta ,  Xin Guo ,  Soonil Hong

Inventor： Virendra V. S. Rana ,  Andrew Conners ,  Anand Gupta ,  Xin Guo ,  Soonil Hong

IPC: H01L214763

CPC classification number: H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31116 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76837

Abstract: A semiconductor manufacturing process with improved gap fill capabilities is provided by a three step process of FSG deposition/etchback/FSG deposition. A first layer of FSG is partially deposited over a metal layer. An argon sputter etchback step is then carried out to etch out excess deposition material. Finally, a second layer of FSG is deposited to complete the gap fill process.

Abstract translation: 通过FSG沉积/回蚀/ FSG沉积的三步工艺提供具有改进的间隙填充能力的半导体制造工艺。 FSG的第一层部分沉积在金属层上。 然后进行氩溅射回蚀步骤以蚀刻掉多余的沉积材料。 最后，存放第二层FSG以完成间隙填充过程。

公开(公告)号：US06121163A

公开(公告)日：2000-09-19

申请号：US599270

申请日：1996-02-09

Applicant: Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

Inventor： Anand Gupta ,  Virendra V. S. Rana ,  Amrita Verma ,  Mohan K. Bhan ,  Sudhakar Subrahmanyam

IPC: C30B29/18 ,  C23C16/40 ,  C23C16/50 ,  H01L21/205 ,  H01L21/316 ,  H05H1/24

CPC classification number: H01J37/32082 ,  C23C16/401 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/31629

Abstract: A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

Abstract translation: 一种用于在界面处沉积具有改进的膜质量的层的方法和装置。 该方法包括以下步骤：将惰性气体引入处理室并通过以选定的增加的速率向腔室施加RF功率从惰性气体形成等离子体。 在RF功率达到全功率之后，引入包括反应气体的处理气体以沉积该层。 在优选的实施方案中，反应气体是四乙氧基硅烷。 在另一优选实施方案中，工艺气体还包括氟。

公开(公告)号：US5084415A

公开(公告)日：1992-01-28

申请号：US425642

申请日：1989-10-23

Applicant: Ajit S. Manocha ,  Virendra V. S. Rana

Inventor： Ajit S. Manocha ,  Virendra V. S. Rana

IPC: H01L21/3205 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01L21/32051

Abstract: When forming a metallization layer in integrated-circuit semiconductor device fabrication, metal such as tungsten, for example, adheres poorly to dielectrics such as, e.g., silicon oxide, and tends to flake off from wafer areas not covered by a glue layer- such areas typically including the backside and the edge of the wafer, and clip marks on the face of the wafer. The invention prevents flaking by processing including: forming an adhesive or glue layer on the dielectric, forming a metal layer, forming a protective layer on metal on the glue layer, and etching to remove metal not covered by the protective layer.

公开(公告)号：US4544438A

公开(公告)日：1985-10-01

申请号：US615836

申请日：1984-05-31

Applicant: Lars C. Luther ,  Virendra V. S. Rana

Inventor： Lars C. Luther ,  Virendra V. S. Rana

IPC: G11C11/14 ,  C30B19/02 ,  H01F41/28 ,  C30B19/04

CPC classification number: C30B19/02 ,  C30B29/28

Abstract: Epitaxial layers of bismuth containing magnetic garnet materials are grown from a melt which comprises flux components lead oxide, bismuth oxide, and one or several additional oxides selected from vanadium oxide, tungsten oxide, and molybdenum oxide. The presence of such additional flux component results in increased magnetic anisotropy per degree of supercooling and thus enhances device properties and facilitates epitaxial layer deposition.

Abstract translation: 包含磁性石榴石材料的含铋的外延层由熔融物生长，该熔体包含助焊剂组分氧化铅，氧化铋和选自氧化钒，氧化钨和氧化钼的一种或多种另外的氧化物。 这种额外的通量组分的存在导致每个过冷却度的磁各向异性增加，从而增强器件特性并促进外延层沉积。

公开(公告)号：US08569650B2

公开(公告)日：2013-10-29

申请号：US13565455

申请日：2012-08-02

Applicant: Zhenhua Zhang ,  Virendra V. S. Rana ,  Vinay K. Shah ,  Chris Eberspacher

Inventor： Zhenhua Zhang ,  Virendra V. S. Rana ,  Vinay K. Shah ,  Chris Eberspacher

IPC: H01L21/44 ,  B23K26/03

CPC classification number: B23K26/03 ,  B23K26/06 ,  B23K26/0624 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/18 ,  Y02E10/547

Abstract: Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.

Abstract translation: 本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。 在一个实施例中，提供了根据期望的图案去除沉积在太阳能电池基板上的电介质层的部分的装置。 在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。 在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。 在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。 在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。