公开(公告)号：US5679153A

公开(公告)日：1997-10-21

申请号：US346618

申请日：1994-11-30

申请人： Vladimir A. Dmitriev ,  Svetlana V. Rendakova ,  Vladimir A. Ivantsov ,  Calvin H. Carter, Jr.

发明人： Vladimir A. Dmitriev ,  Svetlana V. Rendakova ,  Vladimir A. Ivantsov ,  Calvin H. Carter, Jr.

IPC分类号： C30B19/02 ,  C30B19/04 ,  C30B29/36 ,  H01L21/205 ,  H01L21/208

CPC分类号： C30B19/04 ,  C30B29/36 ,  Y10S438/931

摘要： A method is disclosed for producing epitaxial layers of silicon carbide that are substantially free of micropipe defects. The method comprises growing an epitaxial layer of silicon carbide on a silicon carbide substrate by liquid phase epitaxy from a melt of silicon carbide in silicon and an element that enhances the solubility of silicon carbide in the melt. The atomic percentage of that element predominates over the atomic percentage of silicon in the melt. Micropipe defects propagated by the substrate into the epitaxial layer are closed by continuing to grow the epitaxial layer under the proper conditions until the epitaxial layer has a thickness at which micropipe defects present in the substrate are substantially no longer reproduced in the epitaxial layer, and the number of micropipe defects in the epitaxial layer is substantially reduced.

摘要翻译： 公开了一种用于生产基本上没有微孔缺陷的碳化硅外延层的方法。 该方法包括通过从硅中的碳化硅熔体液相外延生长碳化硅衬底上的外延层，以及提高碳化硅在熔体中的溶解度的元素。 该元素的原子百分比优于熔体中硅的原子百分比。 通过在适当的条件下继续生长外延层直到外延层具有在外延层中基本上不再再现衬底中的微管缺陷的厚度，使由衬底传播到外延层中的微管缺陷闭合，并且 外延层中的微管缺陷的数量显着减少。