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1.
公开(公告)号:US20100074293A1
公开(公告)日:2010-03-25
申请号:US12095680
申请日:2006-11-20
申请人: Anatol Lochmann , Robert Seguin , Dieter Bimberg , Sven Rodt , Vladimir Gaysler
发明人: Anatol Lochmann , Robert Seguin , Dieter Bimberg , Sven Rodt , Vladimir Gaysler
CPC分类号: H01S5/34 , B82Y20/00 , H01S5/1042 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/3412
摘要: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.
摘要翻译: 在用于产生具有给定操作性能的单个光子源的方法中,单个光子源的给定操作性能可以通过用于至少一个量子点的激子能级的精细结构间隙的有向设置而被固定。 产生至少一个量子点,其量子点尺寸对应于用于设定的精细结构间隙。
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公开(公告)号:US20120248403A1
公开(公告)日:2012-10-04
申请号:US13076166
申请日:2011-03-30
申请人: André STRITTMATTER , Andrei Schliwa , Tim David Germann , Udo W. Pohl , Vladimir Gaysler , Jan-Hindrik Schulze
发明人: André STRITTMATTER , Andrei Schliwa , Tim David Germann , Udo W. Pohl , Vladimir Gaysler , Jan-Hindrik Schulze
CPC分类号: H01L33/04 , B82Y20/00 , B82Y99/00 , H01L29/02 , H01S5/1067 , H01S5/2215 , H01S5/3201 , H01S5/3403 , H01S5/3412 , Y10S977/762 , Y10S977/773
摘要: The invention inter alia relates to a method of fabricating a layer assembly comprising the steps of: arranging a first layer on top of a carrier; arranging a second layer on top of the first layer; locally modifying the material of the buried first layer and providing at least one modified section in the first layer, wherein the modified material changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section; after locally modifying the material of the buried first layer, depositing a third material on top of the second layer, at least one characteristic of the third material being sensitive to the local mechanical strain in the second layer.
摘要翻译: 本发明尤其涉及一种制造层组件的方法,包括以下步骤:在载体的顶部上布置第一层; 在第一层的顶部布置第二层; 在第一层中局部改性所述材料并提供至少一个改性部分,其中所述改性材料在所述第二层的布置在所述至少一个改性部分上方的部分中改变或引起机械应变; 在局部改变所埋入的第一层的材料之后,在第二层的顶部上沉积第三材料,第三材料的至少一个特性对第二层中的局部机械应变敏感。
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公开(公告)号:US08349712B2
公开(公告)日:2013-01-08
申请号:US13076166
申请日:2011-03-30
申请人: André Strittmatter , Andrei Schliwa , Tim David Germann , Udo W. Pohl , Vladimir Gaysler , Jan-Hindrik Schulze
发明人: André Strittmatter , Andrei Schliwa , Tim David Germann , Udo W. Pohl , Vladimir Gaysler , Jan-Hindrik Schulze
CPC分类号: H01L33/04 , B82Y20/00 , B82Y99/00 , H01L29/02 , H01S5/1067 , H01S5/2215 , H01S5/3201 , H01S5/3403 , H01S5/3412 , Y10S977/762 , Y10S977/773
摘要: The invention inter alia relates to a method of fabricating a layer assembly comprising the steps of: arranging a first layer on top of a carrier; arranging a second layer on top of the first layer; locally modifying the material of the buried first layer and providing at least one modified section in the first layer, wherein the modified material changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section; after locally modifying the material of the buried first layer, depositing a third material on top of the second layer, at least one characteristic of the third material being sensitive to the local mechanical strain in the second layer.
摘要翻译: 本发明尤其涉及一种制造层组件的方法,包括以下步骤:在载体的顶部上布置第一层; 在第一层的顶部布置第二层; 在第一层中局部改性所述材料并提供至少一个改性部分,其中所述改性材料在所述第二层的布置在所述至少一个改性部分上方的部分中改变或引起机械应变; 在局部改变所埋入的第一层的材料之后,在第二层的顶部上沉积第三材料,第三材料的至少一个特性对第二层中的局部机械应变敏感。
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4.
公开(公告)号:US08404506B2
公开(公告)日:2013-03-26
申请号:US12095680
申请日:2006-11-20
申请人: Anatol Lochmann , Robert Seguin , Dieter Bimberg , Sven Rodt , Vladimir Gaysler
发明人: Anatol Lochmann , Robert Seguin , Dieter Bimberg , Sven Rodt , Vladimir Gaysler
IPC分类号: H01L21/00
CPC分类号: H01S5/34 , B82Y20/00 , H01S5/1042 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/3412
摘要: In a method for the production of a single photon source with a given operational performance, the given operational performance for the individual photon source may be fixed by a directed setting of the fine structure gap of the excitonic energy level for at least one quantum dot. The at least one quantum dot is produced with a quantum dot size corresponding to the fine structure gap for setting.
摘要翻译: 在用于产生具有给定操作性能的单个光子源的方法中,单个光子源的给定操作性能可以通过用于至少一个量子点的激子能级的精细结构间隙的有向设置而被固定。 产生至少一个量子点,其量子点尺寸对应于用于设定的精细结构间隙。
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