公开(公告)号：US20050104215A1

公开(公告)日：2005-05-19

申请号：US10710042

申请日：2004-06-15

Applicant: Cheng-Heng Kao ,  Wan-Chun Chang

Inventor： Cheng-Heng Kao ,  Wan-Chun Chang

IPC: H01L23/48 ,  H01L23/485

CPC classification number: H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A contact structure is suitable for contacting with a soldering bump. The contact structure mainly comprises a bonding pad and an under bump metallurgy including a platinum barrier layer. The platinum barrier layer is disposed between the bonding pad and the soldering bump. The platinum barrier layer with the lower consumption rate and oxidation resistance capability can be used instead of the conventional nickel barrier layer.

Abstract translation: 接触结构适于与焊接凸块接触。 接触结构主要包括焊接区和包括铂阻挡层的凸起下金属冶金。 铂阻挡层设置在焊盘和焊接凸块之间。 可以使用具有较低的消耗速率和抗氧化能力的铂阻挡层来代替常规的镍阻挡层。

公开(公告)号：US08350090B1

公开(公告)日：2013-01-08

申请号：US13216321

申请日：2011-08-24

Applicant: Shih-Yi Wei ,  Wan-Chun Chang ,  Yu-Chih Yeh

Inventor： Shih-Yi Wei ,  Wan-Chun Chang ,  Yu-Chih Yeh

IPC: C07C45/00 ,  C07C49/00

CPC classification number: C12P7/26 ,  C07C45/59 ,  C12P7/22 ,  C12P41/004 ,  Y02P20/55 ,  C07C49/753

Abstract: The present invention provides novel processes of preparing racemic and optically active cyclopentenones of Formula I: The invention also provides novel cyclopentenones of formula I in racemic or optically active form.

Abstract translation: 本发明提供制备式I的外消旋和光学活性环戊烯酮的新方法：本发明还提供外消旋或光学活性形式的新颖的式I的环戊烯酮。