公开(公告)号：US11306768B2

公开(公告)日：2022-04-19

申请号：US16731694

申请日：2019-12-31

申请人： Wei Shang ,  Craig Daye ,  Jiacheng Shang

发明人： Wei Shang ,  Craig Daye ,  Jiacheng Shang

IPC分类号： F16C11/04 ,  E21B43/12

摘要： A two-piece coupling walking beam is foldable and separable for sucker rod pumping system shipment, storage, installation, or servicing. It provides a two-piece coupling walking beam using connection plates—a pin plate, a fastening plate, and/or strengthening plate(s) for sucker rod pumping systems. A foldable walking beam with a two-piece coupling beam has a connection joint by which the portion with a horsehead located in the front end of the beam for sucker rod pumping systems wherein the walking beam can be folded either transversely (horizontally or sideways) or longitudinally (vertically) to the other portion of the beam without a horsehead to provide working space for system maintenance, installation/reinstallation, or servicing.

公开(公告)号：US20200347876A1

公开(公告)日：2020-11-05

申请号：US16731694

申请日：2019-12-31

申请人： Wei Shang ,  Craig Daye ,  Jiacheng Shang

发明人： Wei Shang ,  Craig Daye ,  Jiacheng Shang

IPC分类号： F16C11/04 ,  E21B43/12

摘要： A two-piece coupling walking beam is foldable and separable for sucker rod pumping system shipment, storage, installation, or servicing. It provides a two-piece coupling walking beam using connection plates—a pin plate, a fastening plate, and/or strengthening plate(s) for sucker rod pumping systems. A foldable walking beam with a two-piece coupling beam has a connection joint by which the portion with a horsehead located in the front end of the beam for sucker rod pumping systems wherein the walking beam can be folded either transversely (horizontally or sideways) or longitudinally (vertically) to the other portion of the beam without a horsehead to provide working space for system maintenance, installation/reinstallation, or servicing.

公开(公告)号：USD628504S1

公开(公告)日：2010-12-07

申请号：US29240196

申请日：2005-10-11

申请人： Adel O. Sayegh ,  Shaoshan Li ,  Wei Shang

设计人： Adel O. Sayegh ,  Shaoshan Li ,  Wei Shang

公开(公告)号：US06261926B1

公开(公告)日：2001-07-17

申请号：US09569246

申请日：2000-05-11

申请人： Wei-Shang King

发明人： Wei-Shang King

IPC分类号： H01L2176

CPC分类号： H01L21/76221

摘要： The present invention provides a method for fabricating a field oxide on a semiconductor substrate. A first pad layer and a first mask layer is formed successively on the semiconductor substrate. An opening is formed in the first mask layer to define a region for forming the field oxide. A first field oxide is formed in the opening, which is then removed to form a concave portion. The first pad layer exposed by the concave portion is removed to form a cavity. A second pad layer having a smaller thickness than the first pad layer is formed on the semiconductor substrate. A mask portion is formed in the sidewall of the patterned first mask layer and the cavity. The mask portion in the sidewall of the patterned first mask layer has a thickness less than 300 Å. Finally, thermal oxidation is carried out to form a second field oxide in the concave portion. By means of the local pad film thinning technique, and forming a nitride liner and a concave portion to grow the field oxide layer, the bird's beak encroachment and the thinning effect of the field oxide layer can be both inhibited. In addition, defects in the silicon substrate due to the formation of the field oxide can also be inhibited.

摘要翻译： 本发明提供一种在半导体衬底上制造场氧化物的方法。 在半导体基板上依次形成第一焊盘层和第一掩模层。 在第一掩模层中形成开口以限定用于形成场氧化物的区域。 在开口中形成第一场氧化物，然后将其除去以形成凹部。 由凹部露出的第一衬垫层被去除以形成空腔。 在半导体衬底上形成厚度小于第一焊盘层的第二衬垫层。 在图案化的第一掩模层和空腔的侧壁中形成掩模部分。 图案化的第一掩模层的侧壁中的掩模部分具有小于300的厚度。 最后，进行热氧化以在凹部中形成第二场氧化物。 通过局部焊盘薄膜化技术，形成氮化物衬垫和凹部来生长场氧化物层，可以抑制鸟的喙侵蚀和场氧化物层的变薄效应。 此外，还可以抑制由于形成场氧化物而导致的硅衬底中的缺陷。

公开(公告)号：US06242357B1

公开(公告)日：2001-06-05

申请号：US09306378

申请日：1999-05-06

申请人： Houng-Chi Wei ,  Wei-Shang King

发明人： Houng-Chi Wei ,  Wei-Shang King

IPC分类号： H01L21311

CPC分类号： H01L27/1087 ,  H01L21/30604 ,  H01L21/31111 ,  H01L29/66181

摘要： A method of forming a DRAM cell with a trench capacitor over a semiconductor substrate comprises the following steps. First, an etching step is performed to form a trench structure in the substrate, wherein the trench structure has a bottom and sidewalls, and the sidewalls are adjacent to the bottom. Then, the trench structure is doped to form a doping region on the bottom and a portion of the sidewalls. A selective etching step is performed to remove a portion of the doping region, wherein a selectivity of the doping region is higher than that of undoped sidewalls. A dielectric layer is formed on a top surface of the trench structure. A conducting layer is then formed in the trench structure. Next, a gate structure is formed on the substrate. A doping step is used to form the drain/source structures adjacent to the gate. A strap region is formed to couple the conducting layer and the drain/source structures.

摘要翻译： 在半导体衬底上形成具有沟槽电容器的DRAM单元的方法包括以下步骤。 首先，执行蚀刻步骤以在衬底中形成沟槽结构，其中沟槽结构具有底部和侧壁，并且侧壁与底部相邻。 然后，沟槽结构被掺杂以在底部和侧壁的一部分上形成掺杂区域。 执行选择性蚀刻步骤以去除掺杂区域的一部分，其中掺杂区域的选择性高于未掺杂侧壁的选择性。 介电层形成在沟槽结构的顶表面上。 然后在沟槽结构中形成导电层。 接下来，在基板上形成栅极结构。 掺杂步骤用于形成与栅极相邻的漏极/源极结构。 形成带区域以连接导电层和漏极/源极结构。

公开(公告)号：US06235604B1

公开(公告)日：2001-05-22

申请号：US09118336

申请日：1998-07-16

申请人： Wei-Shang King

发明人： Wei-Shang King

IPC分类号： H01L2120

CPC分类号： H01L28/87 ,  H01L27/10852 ,  H01L28/91

摘要： A method for manufacturing a capacitor includes the steps of a) forming a sacrificial layer over the etching stop layer, b) partially removing the sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a first conducting layer over the sacrificial layer and in the contact window, d) partially removing the first conducting layer and the sacrificial layer to expose a portion of the sacrificial layer and retain a portion of the first conducting layer, e) forming a second conducting layer over top surfaces and sidewalls of the portion of the first conducting layer and the portion of the sacrificial layer, and f) partially removing the second conducting layer while retaining a portion of the second conducting layer alongside the portion of the first conducting layer and the portion of the sacrificial layer, and removing the portion of the sacrificial layer to expose the etching stop layer and construct a capacitor plate with a generally cross-sectionally modified T-shaped structure. This structure not only effectively increases the surface area of the capacitor but only has a smooth top surface which is conducive to the subsequent planarization process.

摘要翻译： 一种制造电容器的方法包括以下步骤：a）在蚀刻停止层上形成牺牲层，b）部分去除牺牲层，蚀刻停止层和电介质层以形成接触窗，c）形成第一 在所述牺牲层和所述接触窗口中的导电层，d）部分地去除所述第一导电层和所述牺牲层以暴露所述牺牲层的一部分并且保持所述第一导电层的一部分，e）形成第二导电层 所述第一导电层的所述部分的顶表面和侧壁以及所述牺牲层的所述部分，以及f）部分地去除所述第二导电层，同时将所述第二导电层的一部分保持在所述第一导电层的所述部分的旁边， 牺牲层，并且去除牺牲层的部分以暴露蚀刻停止层并构建具有大体交叉的电容器板 截面改性T型结构。 该结构不仅有效地增加了电容器的表面积，而且仅具有平滑的顶表面，这有利于随后的平坦化处理。

公开(公告)号：US6153462A

公开(公告)日：2000-11-28

申请号：US132557

申请日：1998-08-11

申请人： Wei-Shang King

发明人： Wei-Shang King

IPC分类号： H01L21/02 ,  H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/84

摘要： A method is provided for manufacturing a capacitor having a generally crosssectionally modified T-shaped structure with a rough surface to serve as a lower capacitor plate, and having another dielectric layer and another conducting layer to construct an upper capacitor plate. Such a structure not only significantly increases the surface area of the capacitor but is conducive to the subsequent planarization process.

摘要翻译： 提供一种用于制造具有粗糙表面的大致横截面改性的T形结构以用作下电容器板的电容器的方法，并且具有另一个电介质层和另一导电层以构成上电容器板。 这种结构不仅显着地增加了电容器的表面积，而且有利于随后的平坦化处理。

公开(公告)号：US20210217485A1

公开(公告)日：2021-07-15

申请号：US17220105

申请日：2021-04-01

申请人： Jang-Jih Lu ,  Chun-Hsien Chen ,  Hsin-Yao Wang ,  Yi-Hsin Chan ,  Wei-Shang Shih

发明人： Jang-Jih Lu ,  Chun-Hsien Chen ,  Hsin-Yao Wang ,  Yi-Hsin Chan ,  Wei-Shang Shih

IPC分类号： G16B5/20 ,  G16B40/00 ,  G16C20/30 ,  G16C20/70 ,  G16H50/50 ,  G16H50/20

摘要： A method of establishing a coronary artery disease (CAD) prediction model for CAD screening includes establishing a data set in a computer equipment; entering the data set and corresponding future CAD condition of asymptomatic individuals into a machine learning component; selecting a plurality of robust variables from the clinical data and the cardiovascular markers of the cardiovascular markers panel by using feature selection methods; establishing the CAD prediction model by using machine learning methods; uploading new clinical data and new results of the cardiovascular markers to the cloud-based platform when any asymptomatic individuals undergo the health examination, and performing calculation and analysis by the CAD prediction model; and notifying the asymptomatic individuals of having a high risk of encountering a CAD event or not in a certain period of follow-up time.

公开(公告)号：USD648302S1

公开(公告)日：2011-11-08

申请号：US29386048

申请日：2011-02-24

申请人： Cheol Woo Park ,  Shane Lee ,  Wei Shang

设计人： Cheol Woo Park ,  Shane Lee ,  Wei Shang

公开(公告)号：US20080284601A1

公开(公告)日：2008-11-20

申请号：US12163855

申请日：2008-06-27

申请人： Adel O. Sayegh ,  Shaoshan Li ,  Wei Shang

发明人： Adel O. Sayegh ,  Shaoshan Li ,  Wei Shang

IPC分类号： G08B13/14

CPC分类号： E05B73/0017 ,  E05B73/0041 ,  G08B13/2434

摘要： An article surveillance tag that has a shock absorbing mechanism that prevents unauthorized removal of the tag by the application of a strike force to the tag by a blunt object. In one embodiment, the article surveillance tag is adapted to engage articles that cannot be penetrated by pins.

摘要翻译： 一种具有减震机构的物品监视标签，其​​通过钝器对标签施加冲击力来防止未经授权地移除标签。 在一个实施例中，物品监视标签适于接合不能被销钉穿透的物品。