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    METHOD AND APPARATUS FOR SUBSTRATE PRECLEAN WITH HYDROGEN CONTAINING HIGH FREQUENCY RF PLASMA
    1.
    发明申请
    METHOD AND APPARATUS FOR SUBSTRATE PRECLEAN WITH HYDROGEN CONTAINING HIGH FREQUENCY RF PLASMA 审中-公开
    含氢高压RF等离子体的基板预处理方法及装置

    公开(公告)号：US20130330920A1

    公开(公告)日：2013-12-12

    申请号：US13490059

    申请日：2012-06-06

    申请人： Guojun Liu ,  Xianmin Tang ,  Anantha Subramani ,  Wei W. Wang

    发明人： Guojun Liu ,  Xianmin Tang ,  Anantha Subramani ,  Wei W. Wang

    IPC分类号： H01L21/283

    CPC分类号： H01L21/76814 ,  H01L21/02063

    摘要： A high-frequency, hydrogen-based radio-frequency (RF) plasma is used to reduce a metal oxide and other contaminant disposed in an aperture that is formed in an ultra-low k dielectric material. Because the frequency of the plasma is at least about 40 MHz and the primary gas in the plasma is hydrogen, metal oxide can be advantageously removed without damaging the dielectric material.

    摘要翻译： 使用高频，氢基射频（RF）等离子体来减少设置在形成于超低k电介质材料的孔中的金属氧化物和其它污染物。 由于等离子体的频率为至少约40MHz，等离子体中的初级气体为氢，所以可以有利地除去金属氧化物而不损坏电介质材料。

    Apparatus and a method for cleaning a dielectric film
    5.
    发明授权
    Apparatus and a method for cleaning a dielectric film 有权
    用于清洁电介质膜的装置和方法

    公开(公告)号：US07658802B2

    公开(公告)日：2010-02-09

    申请号：US11284775

    申请日：2005-11-22

    申请人： Xinyu Fu ,  John Forster ,  Wei W. Wang

    发明人： Xinyu Fu ,  John Forster ,  Wei W. Wang

    IPC分类号： B08B6/00

    CPC分类号： H01L21/02063 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3266

    摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.

    摘要翻译： 在本发明中提供了一种清洁电介质膜的装置和方法。 在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到 室主体，以及邻近通道设置的至少一个磁体。 在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团 通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

    Substrate support with radio frequency (RF) return path
    8.
    发明授权
    Substrate support with radio frequency (RF) return path 有权
    基板支持射频（RF）返回路径

    公开(公告)号：US09340866B2

    公开(公告)日：2016-05-17

    申请号：US13435766

    申请日：2012-03-30

    申请人： Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

    发明人： Alan Ritchie ,  Donny Young ,  Wei W. Wang ,  Ananthkrishna Jupudi ,  Thanh X. Nguyen ,  Kirankumar Savandaiah

    IPC分类号： C23C14/50 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34

    CPC分类号： C23C14/34 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32651 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/3405 ,  H01J37/3411

    摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.

    摘要翻译： 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的装置包括衬底支撑件，其可以包括具有用于在其上支撑衬底的表面的电介质构件; 一个或多个第一导电构件，其布置在所述电介质构件下方并且具有邻近所述电介质构件的电介质构件面向表面; 以及设置在所述一个或多个第一导电构件周围并且接触所述一个或多个第一导电构件的第二导电构件，使得通过RF源提供给所述衬底的RF能量通过沿着所述衬底支撑件的所述电介质构件面向表面径向向外径向向外移动 或更多的第一导电构件，并且沿第一导电构件的第一表面布置成大致平行于一个或多个第一导电构件的沿着电介质层面向表面行进的周边边缘表面。