公开(公告)号：US20080105004A1

公开(公告)日：2008-05-08

申请号：US11907149

申请日：2007-10-10

申请人： Wei Kai Wang

发明人： Wei Kai Wang

IPC分类号： E05B67/06 ,  E05B65/48

CPC分类号： E05B67/36 ,  Y10T70/30 ,  Y10T70/40 ,  Y10T70/413 ,  Y10T70/443 ,  Y10T70/446 ,  Y10T70/7661

摘要： A hidden shackle style lock is disclosed. The lock has a substantially cylindrical housing having a top surface, a bottom surface, and a curved side surface. The lock also has a first cavity on the bottom surface of the housing which extends part way along a thickness of the housing, and a second cavity on the side surface intersecting with the first cavity. The lock further includes has a hollow sleeve slidably attached within the second cavity. The sleeve has a first end face, a second end face, and a third cavity. The third cavity extends from the first end face to the second face and is substantially coaxial with the second cavity. A shackle is coupled to the first end face of the sleeve. A core member with a locking mechanism is disposed within the third cavity and coupled to the shackle. A driver member is located between the core member and the shackle and couples the core member to the shackle.

摘要翻译： 公开了一种隐藏的扣环式锁。 锁具有具有顶表面，底表面和弯曲侧表面的大致圆柱形壳体。 所述锁还具有位于所述壳体的底表面上的第一空腔，所述第一空腔沿着所述壳体的厚度部分地延伸，并且在与所述第一腔相交的侧表面上具有第二腔。 锁具还包括具有可滑动地附接在第二腔内的中空套管。 套筒具有第一端面，第二端面和第三腔。 第三腔从第一端面延伸到第二面，并且与第二腔基本上同轴。 钩环联接到套筒的第一端面。 具有锁定机构的芯构件设置在第三腔内并且联接到钩环。 驱动器构件位于芯构件和钩环之间，并将芯构件连接到钩环。

公开(公告)号：US20080006829A1

公开(公告)日：2008-01-10

申请号：US11646319

申请日：2006-12-28

申请人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Kai Wang ,  Kuo-Sheng Wen

发明人： Dong-Sing Wuu ,  Ray-Hua Horng ,  Wei-Kai Wang ,  Kuo-Sheng Wen

IPC分类号： H01L29/15 ,  H01L31/0256

CPC分类号： H01L21/02647 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02642 ,  H01L33/007

摘要： A semiconductor structure includes: a base layer formed with an array of recesses; a first epitaxial layer stacked on the base layer and extending into the recesses in the base layer; a patterned mask layer stacked on the first epitaxial layer; and a second epitaxial layer having a first portion that corresponds to the recesses in the base layer and that extends through the mask layer to contact the first epitaxial layer, and a second portion that is stacked on the mask layer.

摘要翻译： 半导体结构包括：形成有凹槽阵列的基底层; 第一外延层，堆叠在基底层上并延伸到基底层的凹部中; 层叠在所述第一外延层上的图案化掩模层; 以及第二外延层，其具有对应于所述基底层中的所述凹部的第一部分，并且延伸穿过所述掩模层以接触所述第一外延层，以及层叠在所述掩模层上的第二部分。

公开(公告)号：US08529575B2

公开(公告)日：2013-09-10

申请号：US13206573

申请日：2011-08-10

申请人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

发明人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

IPC分类号： A61B17/17

CPC分类号： A61B17/3403 ,  A61B17/2804 ,  A61B17/2812 ,  A61B17/8866 ,  A61B2017/2808

摘要： A surgical clamp includes first and second supports respectively having first and second engagement sections. The first and second supports are pivotably connected at a connection by a pivotal portion such that the first and second supports are pivotable about a pivot axis extending through the connection. An opening is defined between the first and second engagement sections for receiving a bone of a patient. A connecting tube includes a first end fixed to the connection. A guiding tube includes an end connected to a second end of the connecting tube and is located in a central plane of the opening between the first and second engagement sections. The central plane includes the pivot axis and has equal spacing to the first and second engagement sections. A sliding rod is fixed to the connecting tube and includes a sliding groove slideably receiving a pole located on the pivotal portion.

摘要翻译： 手术夹具包括分别具有第一和第二接合部分的第一和第二支撑件。 第一和第二支撑件通过枢转部分在连接处可枢转地连接，使得第一和第二支撑件可围绕延伸穿过连接件的枢转轴线枢转。 在第一和第二接合部分之间限定开口，用于接收患者的骨骼。 连接管包括固定到连接件的第一端。 引导管包括连接到连接管的第二端并且位于第一和第二接合部之间的开口的中心平面中的端部。 中心平面包括枢转轴线并且具有与第一和第二接合部分相等的间隔。 滑动杆固定在连接管上，并包括可滑动地容纳位于枢转部分上的杆的滑动槽。

公开(公告)号：US07956373B2

公开(公告)日：2011-06-07

申请号：US12081595

申请日：2008-04-17

申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22

摘要： The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The first pattern is different from the second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light extraction area of the sidewall, and consequently enhances the light extraction efficiency of the semiconductor light-emitting device.

摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，多层结构，最顶层和至少一个电极。 多层结构形成在基板上并且包括发光区域。 最顶层形成在多层结构上，最顶层的侧壁的下部表现出相对于第一图案的第一表面形态。 此外，最顶层的侧壁的上部相对于第二图案显示出第二表面形态。 第一种模式与第二种模式不同。 至少一个电极形成在最上层。 因此，根据本发明的半导体发光器件的侧壁呈现表面形态，这增加了侧壁的光提取面积，从而提高了半导体发光器件的光提取效率。

公开(公告)号：US07768027B2

公开(公告)日：2010-08-03

申请号：US12184933

申请日：2008-08-01

申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

公开(公告)号：US20100025704A1

公开(公告)日：2010-02-04

申请号：US12181916

申请日：2008-07-29

申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/46 ,  H01L33/405

摘要： A method for fabricating a high efficiency lighting device and the structure thereof are disclosed. The method includes the following steps: providing a light emitting diode structure; attaching a distributed-Bragg reflecting layer (DBR) to the light emitting diode structure by vapor deposition; and connecting the light emitting diode structure to a eutectic layer through the distributed-Bragg reflecting layer to form the high efficiency lighting device.

摘要翻译： 公开了一种制造高效照明装置的方法及其结构。 该方法包括以下步骤：提供发光二极管结构; 通过气相沉积将分布布拉格反射层（DBR）附着到发光二极管结构; 并且通过分布式布拉格反射层将发光二极管结构连接到共晶层，以形成高效照明装置。

公开(公告)号：US20120197291A1

公开(公告)日：2012-08-02

申请号：US13206573

申请日：2011-08-10

申请人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

发明人： Yung-Fang Tsai ,  Wei-Kai Wang ,  Yung-Fu Liao ,  Din-Hsiang Tseng

IPC分类号： A61B17/28

CPC分类号： A61B17/3403 ,  A61B17/2804 ,  A61B17/2812 ,  A61B17/8866 ,  A61B2017/2808

摘要： A surgical clamp includes first and second supports respectively having first and second engagement sections. The first and second supports are pivotably connected at a connection by a pivotal portion such that the first and second supports are pivotable about a pivot axis extending through the connection. An opening is defined between the first and second engagement sections for receiving a bone of a patient. A connecting tube includes a first end fixed to the connection. A guiding tube includes an end connected to a second end of the connecting tube and is located in a central plane of the opening between the first and second engagement sections. The central plane includes the pivot axis and has equal spacing to the first and second engagement sections. A sliding rod is fixed to the connecting tube and includes a sliding groove slideably receiving a pole located on the pivotal portion.

摘要翻译： 手术夹具包括分别具有第一和第二接合部分的第一和第二支撑件。 第一和第二支撑件通过枢转部分在连接处可枢转地连接，使得第一和第二支撑件可围绕延伸穿过连接件的枢转轴线枢转。 在第一和第二接合部分之间限定开口，用于接收患者的骨骼。 连接管包括固定到连接件的第一端。 引导管包括连接到连接管的第二端并且位于第一和第二接合部之间的开口的中心平面中的端部。 中心平面包括枢转轴线并且具有与第一和第二接合部分相等的间隔。 滑动杆固定在连接管上，并包括可滑动地容纳位于枢转部分上的杆的滑动槽。

公开(公告)号：US07923744B2

公开(公告)日：2011-04-12

申请号：US12755019

申请日：2010-04-06

申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

公开(公告)号：US20100230706A1

公开(公告)日：2010-09-16

申请号：US12755019

申请日：2010-04-06

申请人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/02

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

公开(公告)号：US20090212312A1

公开(公告)日：2009-08-27

申请号：US12269499

申请日：2008-11-12

申请人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。