摘要:
An acoustic wave component includes a layer system having a piezoelectric layer and a first metal layer arranged on the piezoelectric layer, a first resonator having a first electrode in the first metal layer, where the first metal layer includes electrode structures periodically arranged in a direction of propagation of a wave through the acoustic wave component, and a second resonator coupled to the first resonator and electrically isolated from the first resonator. The layer system includes a waveguide for guiding a guided bulk acoustic wave in a lateral direction of the acoustic wave component.
摘要:
Guided bulk acoustic wave devices and method for manufacturing guided bulk acoustic wave devices are provided. A guided bulk acoustic wave device includes a resonator structure with a piezoelectric layer, an electrode layer for exciting guided bulk acoustic waves and a wave guide layer. The thickness of the piezoelectric layer is less than or equal to 50 μm.
摘要:
A method for producing an electric component including a dielectric layer on a substrate, includes the method steps of applying a metallic layer to the substrate and oxidizing the metallic layer to form a dielectric layer, wherein at least one partial region of the metallic layer is fully oxidized through the entire thickness of the layer.
摘要:
A component working with guided bulk acoustic waves is disclosed with at least one substrate and a layer system that is connected to this substrate and suitable for wave propagation. The layer system includes a metallization layer, a first dielectric layer, and a second dielectric layer. The velocity of the acoustic wave is greater in the second dielectric layer than in the first dielectric layer. At least one of the dielectric layers contains TeO2.
摘要:
A MEMS component includes a chip that has a rear side having a low roughness of less than one tenth of the wavelength at the center frequency of an acoustic wave propagating in the component. Metallic structures for scattering bulk acoustic waves are provided on the rear side of the chip and a material of the metallic structures is acoustically matched to a material of the chip.
摘要:
A circuit for use with bulk acoustic waves includes a first electroacoustic system in a first branch and a second electroacoustic system in a second branch. The first electroacoustic system includes a first resonator and a second resonator that are in series in the first branch, and that are galvanically separated, and acoustically coupled, by a first coupling system. The second electroacoustic system includes a first resonator and a second resonator that are connected in series in the second branch, and that are galvanically separated, and acoustically coupled, by a second coupling system. The first and second electroacoustic systems are acoustically coupled via the first and second coupling systems and/or electrically coupled.
摘要:
An electroacoustic component including a layer system disposed between two substrates and electroacoustic structures for exciting a guided bulk acoustic wave, the electroacoustic structures being devoid of cavities. The layer system includes a piezo-electric layer, at least one metal layer, and a planarizing layer, which includes a planar interface provided with a substrate disposed directly thereabove. Such a component can be produced at a low cost by direct wafer bonding of two wafers. The electroacoustic component structures are electrically connected to the external contacts through perpendicular electrical connections.
摘要:
The invention relates to an electroacoustic transducer for a component operating with surface waves, comprising two electrodes having alternately arranged fingers and stub fingers, each connected to a bus bar, the opposing fingers and stub fingers being separated from one another by gaps. In this case, the position of the gaps in the transverse direction preferably has a periodic variation. The pattern of the variation in the gap positions, which, in particular, influences the excitation intensity of the acoustic wave in the edge region of the transducer, is selected so that the excitation profile of the acoustic wave is adjusted to the predetermined energy density profile. As a result of such an adjustment, it is possible to significantly reduce signal losses at the resonant frequency.
摘要:
An electroacoustic component including a layer system disposed between two substrates and electroacoustic structures for exciting a guided bulk acoustic wave, the electroacoustic structures being devoid of cavities. The layer system includes a piezo-electric layer, at least one metal layer, and a planarizing layer, which includes a planar interface provided with a substrate disposed directly thereabove. Such a component can be produced at a low cost by direct wafer bonding of two wafers. The electroacoustic component structures are electrically connected to the external contacts through perpendicular electrical connections.
摘要:
Radio-interrogated surface-wave technology sensor, in which the sensitive element (12) is an impedance which is electrically connected as termination to a surface-wave structure (26) of the sensor.