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公开(公告)号：US08133797B2
公开(公告)日：2012-03-13
申请号：US12122614
申请日：2008-05-16
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , C23C16/045 , C23C16/401 , H01L21/76801
摘要： In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective layer is deposited to protect underlying features in regions of the substrate having lower feature density so that unwanted material may be removed from regions of the substrate having higher feature density. This protective layer may deposits thicker on a low density feature than on a high density feature and may be deposited using a PECVD process or low sputter/deposition ratio HDP CVD process. This protective layer may also be a metallic oxide layer that is resistant to fluorine etching, such as zirconium oxide (ZrO2) or aluminum oxide (Al2O3).
摘要翻译： 可以填充高纵横比（通常至少6:1，例如7:1或更高），窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙的原位半导体工艺，而不损坏底层特征和少量 或者不提供空隙或弱点的发生。 沉积保护层以保护具有较低特征密度的衬底区域中的底层特征，使得可以从具有较高特征密度的衬底的区域去除不需要的材料。 该保护层可以在低密度特征上比在高密度特征上沉积更厚，并且可以使用PECVD工艺或低溅射/沉积比HDP CVD工艺沉积。 该保护层也可以是耐氟蚀刻的金属氧化物层，例如氧化锆（ZrO 2）或氧化铝（Al 2 O 3）。
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公开(公告)号：US20090286381A1
公开(公告)日：2009-11-19
申请号：US12122614
申请日：2008-05-16
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , C23C16/045 , C23C16/401 , H01L21/76801
摘要： In-situ semiconductor process that can fill high aspect ratio (typically at least 6:1, for example 7:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps without damaging underlying features and little or no incidence of voids or weak spots is provided. A protective layer is deposited to protect underlying features in regions of the substrate having lower feature density so that unwanted material may be removed from regions of the substrate having higher feature density. This protective layer may deposits thicker on a low density feature than on a high density feature and may be deposited using a PECVD process or low sputter/deposition ratio HDP CVD process. This protective layer may also be a metallic oxide layer that is resistant to fluorine etching, such as zirconium oxide (ZrO2) or aluminum oxide (Al2O3).
摘要翻译： 可以填充高纵横比（通常至少6:1，例如7:1或更高），窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙的原位半导体工艺，而不损坏底层特征和少量 或者不提供空隙或弱点的发生。 沉积保护层以保护具有较低特征密度的衬底区域中的底层特征，使得可以从具有较高特征密度的衬底的区域去除不需要的材料。 该保护层可以在低密度特征上比在高密度特征上沉积更厚，并且可以使用PECVD工艺或低溅射/沉积比HDP CVD工艺沉积。 该保护层也可以是耐氟蚀刻的金属氧化物层，例如氧化锆（ZrO 2）或氧化铝（Al 2 O 3）。
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公开(公告)号：US06627268B1
公开(公告)日：2003-09-30
申请号：US09849075
申请日：2001-05-03
IPC分类号： C23C16452
CPC分类号： C23C16/45525 , C23C16/45536 , C23C16/482 , C23C16/486 , C23C16/487
摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.
摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。
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公开(公告)号：US20120214666A1
公开(公告)日：2012-08-23
申请号：US13033514
申请日：2011-02-23
CPC分类号： B01J37/349 , B01J23/42 , B01J23/44 , B01J35/0013 , B01J35/006 , B01J35/0073 , B01J35/008 , B01J35/023 , B82Y30/00 , B82Y40/00
摘要： A nano-particle comprising: an interior region comprising a mixed-metal oxide; and an exterior surface comprising a pure metal. In some embodiments, the mixed-metal oxide comprises aluminum oxide and a metallic pinning agent, such as palladium, copper, molybdenum, or cobalt. In some embodiments, the pure metal at the exterior surface is the same as the metallic pinning agent in the mixed-metal oxide in the interior region. In some embodiments, a catalytic nano-particle is bonded to the pure metal at the exterior surface. In some embodiments, the interior region and the exterior surface are formed using a plasma gun. In some embodiments, the interior region and the exterior surface are formed using a wet chemistry process. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a plasma gun. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a wet chemistry process.
摘要翻译： 一种纳米颗粒，包括：包含混合金属氧化物的内部区域; 以及包含纯金属的外表面。 在一些实施方案中，混合金属氧化物包括氧化铝和金属钉扎剂，例如钯，铜，钼或钴。 在一些实施方案中，外表面上的纯金属与内部区域中的混合金属氧化物中的金属钉扎剂相同。 在一些实施方案中，催化纳米颗粒在外表面与纯金属结合。 在一些实施例中，使用等离子体枪形成内部区域和外部表面。 在一些实施例中，使用湿式化学方法形成内部区域和外部表面。 在一些实施方案中，使用等离子体枪将催化纳米颗粒结合到纯金属。 在一些实施方案中，使用湿化学方法将催化纳米颗粒结合到纯金属。
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公开(公告)号：US08669202B2
公开(公告)日：2014-03-11
申请号：US13033514
申请日：2011-02-23
CPC分类号： B01J37/349 , B01J23/42 , B01J23/44 , B01J35/0013 , B01J35/006 , B01J35/0073 , B01J35/008 , B01J35/023 , B82Y30/00 , B82Y40/00
摘要： A nano-particle comprising: an interior region comprising a mixed-metal oxide; and an exterior surface comprising a pure metal. In some embodiments, the mixed-metal oxide comprises aluminum oxide and a metallic pinning agent, such as palladium, copper, molybdenum, or cobalt. In some embodiments, the pure metal at the exterior surface is the same as the metallic pinning agent in the mixed-metal oxide in the interior region. In some embodiments, a catalytic nano-particle is bonded to the pure metal at the exterior surface. In some embodiments, the interior region and the exterior surface are formed using a plasma gun. In some embodiments, the interior region and the exterior surface are formed using a wet chemistry process. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a plasma gun. In some embodiments, the catalytic nano-particle is bonded to the pure metal using a wet chemistry process.
摘要翻译： 一种纳米颗粒，包括：包含混合金属氧化物的内部区域; 以及包含纯金属的外表面。 在一些实施方案中，混合金属氧化物包括氧化铝和金属钉扎剂，例如钯，铜，钼或钴。 在一些实施方案中，外表面上的纯金属与内部区域中的混合金属氧化物中的金属钉扎剂相同。 在一些实施方案中，催化纳米颗粒在外表面与纯金属结合。 在一些实施例中，使用等离子体枪形成内部区域和外部表面。 在一些实施例中，使用湿式化学方法形成内部区域和外部表面。 在一些实施方案中，使用等离子体枪将催化纳米颗粒结合到纯金属。 在一些实施方案中，使用湿化学方法将催化纳米颗粒结合到纯金属。
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