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    Error control method for multiparty multimedia communications
    1.
    发明授权
    Error control method for multiparty multimedia communications 有权
    多方多媒体通信的错误控制方法

    公开(公告)号：US6141785A

    公开(公告)日：2000-10-31

    申请号：US145736

    申请日：1998-09-02

    申请人： Chung Ho Hur ,  Chong Won Park ,  Jin Won Park

    发明人： Chung Ho Hur ,  Chong Won Park ,  Jin Won Park

    IPC分类号： H04L12/24 ,  H04L1/18 ,  H04L12/26 ,  G08C25/00

    CPC分类号： H04L1/18

    摘要： The present invention relates to the error control method in inter-multi-user multimedia communication. There are error detection, error reporting and error recovery functions in the conventional error control method which finds out and solve the error occurring at the time of data transmission between transmitter and receiver, however, these functions are an error control method occurring in end-to-end communication consisting of one transmitter and one receiver and are not appropriate to solving errors occurring concurrently and in a bundle between one or some transmitters and many receivers in many-to-many multiple points inter-multi-user communication such as multimedia communication. Therefore, the present invention uses the damping technique to minimize the number of error control packets of which all the receiver having sensed the error concurrently request the resend based on the NACK.

    摘要翻译： 本发明涉及多用户多媒体通信中的错误控制方法。 在传统的误差控制方法中存在错误检测，错误报告和错误恢复功能，发现和解决了发射机和接收机之间的数据传输时发生的错误，但这些功能是一种错误控制方法， - 由一个发射机和一个接收机组成的通信，并不适合解决多对多用户通信（如多媒体通信）中多个到多个多点同时发生的一个或多个发射机与许多接收机之间的并发发生的错误。 因此，本发明使用阻尼技术来最小化所有接收机已经感知出错误的错误控制分组的数量，同时基于NACK请求重新发送。

    Nonvolatile memory device and storage device including nonvolatile memory device
    2.
    发明授权
    Nonvolatile memory device and storage device including nonvolatile memory device 有权

    公开(公告)号：US10658040B2

    公开(公告)日：2020-05-19

    申请号：US15351550

    申请日：2016-11-15

    申请人： Bongsoon Lim ,  Jung-Yun Yun ,  Ji-Suk Kim ,  Sang-Won Park

    发明人： Bongsoon Lim ,  Jung-Yun Yun ,  Ji-Suk Kim ,  Sang-Won Park

    IPC分类号： G11C16/10 ,  G11C16/34 ,  G11C16/26 ,  G11C16/08

    摘要： A storage device includes a nonvolatile memory device and a controller. The controller provides the nonvolatile memory device with first data, an address, and a program start command and provides the nonvolatile memory device with second data after the program start command is provided the nonvolatile memory device. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the program start command and to continue to perform, based on the first data and the second data, the program operation when the second data is provided to the nonvolatile memory device. The nonvolatile memory device is configured to perform a program and a verification read of a first program loop based on the first data, the verification read of the first program loop being performed using one verification voltage.

    METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS
    8.
    发明申请
    METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS 有权
    用于制造具有精细形状图案的半导体器件的方法

    公开(公告)号：US20160218180A1

    公开(公告)日：2016-07-28

    申请号：US14968999

    申请日：2015-12-15

    申请人： Jung-Gun You ,  Se-Wan PARK ,  Seung-Woo DO ,  In-Won PARK ,  Sug-Hyun SUNG

    发明人： Jung-Gun You ,  Se-Wan PARK ,  Seung-Woo DO ,  In-Won PARK ,  Sug-Hyun SUNG

    IPC分类号： H01L29/10 ,  H01L29/417 ,  H01L21/762 ,  H01L29/66

    CPC分类号： H01L29/66545 ,  H01L21/30604 ,  H01L21/3085 ,  H01L21/76224 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/66818 ,  H01L29/7848 ,  H01L29/785

    摘要： A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on a substrate, forming a second fin-shaped pattern by removing a part of the upper part of the first fin-shaped pattern, forming a dummy gate electrode intersecting with the second fin-shaped pattern on the second fin-shaped pattern, and forming a third fin-shaped pattern by removing a part of an upper part of the second fin-shaped pattern after forming the dummy gate electrode, wherein a width of the upper part of the second fin-shaped pattern is smaller than a width of the upper part of the first fin-shaped pattern and is greater than a width of an upper portion of the third fin-shaped pattern.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成包括上部和下部的第一鳍状图案，通过去除第一鳍状图案的上部的一部分形成第二鳍状图案，形成虚拟栅电极 与第二鳍状图案上的第二鳍状图案相交，并且在形成虚拟栅电极之后，通过去除第二鳍状图案的上部的一部分来形成第三鳍​​状图案，其中宽度 第二鳍状图案的上部小于第一鳍状图案的上部的宽度，并且大于第三鳍状图案的上部的宽度。