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    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER
    2.
    发明申请
    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER 有权
    多站解密反应离子室

    公开(公告)号：US20130008605A1

    公开(公告)日：2013-01-10

    申请号：US13620654

    申请日：2012-09-14

    申请人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    发明人： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    IPC分类号： H01L21/3065

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

    摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

    摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

    Inductively coupled high density plasma reactor for plasma assisted materials processing
    4.
    发明授权
    Inductively coupled high density plasma reactor for plasma assisted materials processing 失效
    用于等离子体辅助材料加工的电感耦合高密度等离子体反应器

    公开(公告)号：US5540800A

    公开(公告)日：1996-07-30

    申请号：US265596

    申请日：1994-06-23

    申请人： Xueyu Qian

    发明人： Xueyu Qian

    IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/48 ,  C23F1/02 ,  C23F1/08

    CPC分类号： H01J37/32082 ,  C23C16/507 ,  H01J37/321

    摘要： The invention is embodied in an inductively coupled plasma reactor including a vacuum chamber for holding a wafer in the interior thereof and capable of containing a plasma gas, and having an RF antenna and an RF power source for supplying RF power to the RF antenna and apparatus for electrically isolating the RF antenna from the RF power source so as to reduce capacitive coupling therebetween. Preferably, the apparatus for isolating the antenna is a transformer having a primary winding connected across the RF power source and a secondary winding connected across the RF antenna. Preferably, the reactor further includes a conductive Faraday shield having plural layers, the Faraday shield being disposed between the RF antenna and the ceiling of the vacuum chamber, the Faraday shield having eddy current-suppressing apertures in each layer thereof facing conductive portions of the shield in an adjacent layer thereof. The ceiling of the vacuum chamber acts as a gas distribution manifold. The inner layer of the ceiling is the shower head of the manifold.

    摘要翻译： 本发明体现在电感耦合等离子体反应器中，其包括用于在其内部保持晶片并且能够容纳等离子体气体的真空室，并且具有用于向RF天线和设备提供RF功率的RF天线和RF电源 用于将RF天线与RF电源电隔离，以便减小它们之间的电容耦合。 优选地，用于隔离天线的装置是具有连接在RF功率源上的初级绕组和跨过RF天线连接的次级绕组的变压器。 优选地，反应器还包括具有多层的导电法拉第屏蔽，法拉第屏蔽设置在RF天线和真空室的天花板之间，法拉第屏蔽层在其每层中具有涡流抑制孔，其面对导电部分的屏蔽 在其相邻层中。 真空室的天花板用作气体分配歧管。 天花板的内层是歧管的淋浴头。

    ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE
    6.
    发明申请
    ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE 审中-公开
    具有改进的水分蚀刻速率的等离子体反应器的静电切块和基体

    公开(公告)号：US20100271745A1

    公开(公告)日：2010-10-28

    申请号：US12502988

    申请日：2009-07-14

    申请人： Jinyuan CHEN ,  Liang Ouyang ,  Junichi Arami ,  Xueyu Qian ,  Zhiyou Du ,  Gerald Yin

    发明人： Jinyuan CHEN ,  Liang Ouyang ,  Junichi Arami ,  Xueyu Qian ,  Zhiyou Du ,  Gerald Yin

    IPC分类号： H01L21/683 ,  C23F1/08 ,  H05K13/00

    CPC分类号： H01L21/6831 ,  Y10T29/49117

    摘要： An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.

    摘要翻译： 描述了一种静电吸盘装置，其中静电卡盘和支撑件由高电阻率，高热导率和低RF能量损耗介电材料制成。 这种静电卡盘装置的优点是晶片表面的电磁场分布比传统的静电卡盘装置更均匀。 结果，与传统的静电卡盘装置相比，晶片蚀刻速率，特别是晶片边缘蚀刻速率不均匀性显着提高。

    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER
    7.
    发明申请
    MULTI-STATION DECOUPLED REACTIVE ION ETCH CHAMBER 有权
    多站解密反应离子室

    公开(公告)号：US20080011424A1

    公开(公告)日：2008-01-17

    申请号：US11772726

    申请日：2007-07-02

    申请人： Gerald YIN ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    发明人： Gerald YIN ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

    IPC分类号： C23F1/00 ,  H05H1/00

    CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

    摘要： A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

    摘要翻译： 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

    Bonded multi-layer RF window
    8.
    发明申请
    Bonded multi-layer RF window 审中-公开
    保税多层射频窗口

    公开(公告)号：US20070079936A1

    公开(公告)日：2007-04-12

    申请号：US11445559

    申请日：2006-06-02

    申请人： Maocheng Li ,  John Holland ,  Patrick Leahey ,  Xueyu Qian ,  Michael Barnes ,  Jon Clinton ,  You Wang ,  Nianci Han

    发明人： Maocheng Li ,  John Holland ,  Patrick Leahey ,  Xueyu Qian ,  Michael Barnes ,  Jon Clinton ,  You Wang ,  Nianci Han

    IPC分类号： B31B1/60 ,  C23F1/00 ,  C23C16/00

    CPC分类号： H01P1/08 ,  B32B2315/02 ,  C04B35/63452 ,  C04B37/003 ,  C04B37/005 ,  C04B37/008 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/708 ,  H01J37/32082 ,  Y10T156/10

    摘要： A bonded multi-layer RF window may include an external layer of dielectric material having desired thermal properties, an internal layer of dielectric material exposed to plasma inside a reaction chamber, and an intermediate layer of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF window may include cooling conduits for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits and gas injection apertures may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.

    摘要翻译： 键合的多层RF窗可以包括具有期望的热性质的外部介电材料层，暴露于反应室内的等离子体的介电材料的内部层，以及外层和内层之间的接合材料的中间层。 通过室内的化学反应和通过窗口的RF能量传递产生的热量可以从内层传导到外层，其可在半导体晶片制造过程中被冷却。 粘合的多层RF窗可以包括用于循环冷却剂以便于冷却内层的冷却管道; 另外或替代地，可以包括气体分配管道和气体注入孔，用于将一个或多个处理气体输送到反应室中。 包括等离子体反应室的系统可以采用本发明的结合的多层RF窗口。

    Method for enhancing etching of TiSix
    9.
    发明授权
    Method for enhancing etching of TiSix 失效
    增强TiSix蚀刻的方法

    公开(公告)号：US06544896B1

    公开(公告)日：2003-04-08

    申请号：US09686208

    申请日：2000-10-10

    申请人： Songlin Xu ,  Takakazu Kusuki ,  Xueyu Qian

    发明人： Songlin Xu ,  Takakazu Kusuki ,  Xueyu Qian

    IPC分类号： H01L21302

    CPC分类号： H01L21/32137 ,  H01L21/02071

    摘要： Conventional methods of etching TiSix use Cl2 or HBr as the plasma etchant. However, these methods can lead to undesirable residues, due to the presence of silicon nodules in the TiSix The present invention overcomes the residue problem by adding a fluorine containing gas to the plasma etchant, which is then able to effectively etch the Si nodules at an etch rate which is approximately the same as the etch rate of the TiSix, so that the undesirable residue is not formed. A method of etching TiSix is provided, wherein the surface of the TiSix is exposed, typically through a patterned mask, to a plasma etchant. The plasma etchant comprises (i) at least one fluorine containing gas, such as SF6, NF3, CxFy, and compatible mixtures of such gases; and (ii) a gas selected from the group consisting of HBr, Cl2, and combinations thereof.

    摘要翻译： TiSix的常规蚀刻方法使用Cl2或HBr作为等离子体蚀刻剂。 然而，由于在TiSix中存在硅结节，这些方法可能导致不期望的残留物本发明通过向等离子体蚀刻剂中加入含氟气体来克服残留问题，其然后能够有效地将Si结节蚀刻在 蚀刻速率与TiSix的蚀刻速率大致相同，从而不形成不希望的残留物。 提供了蚀刻TiSix的方法，其中TiSix的表面通常通过图案化掩模暴露于等离子体蚀刻剂。 等离子体蚀刻剂包括（i）至少一种含氟气体，例如SF 6，NF 3，C x F y以及这些气体的相容混合物; 和（ii）选自HBr，Cl 2及其组合的气体。