公开(公告)号：US07445808B2

公开(公告)日：2008-11-04

申请号：US11320104

申请日：2005-12-28

申请人： Xuming Xiong ,  Venkat Selvamanickam ,  Ping Hou

发明人： Xuming Xiong ,  Venkat Selvamanickam ,  Ping Hou

IPC分类号： B05D5/12 ,  B05D3/00 ,  H01L39/24

CPC分类号： H01L39/2461 ,  Y10S505/74 ,  Y10T29/49014

摘要： A superconducting article and a method of making a superconducting article is described. The method of forming a superconducting article includes providing a substrate, forming a buffer layer to overlie the substrate, the buffer layer including a first buffer film deposited in the presence of an ion beam assist source and having a uniaxial crystal texture. The method further includes forming a superconducting layer to overlie the buffer layer.

摘要翻译： 描述超导制品和制造超导制品的方法。 形成超导体的方法包括提供衬底，形成覆盖在衬底上的缓冲层，缓冲层包括在离子束辅助源存在下沉积并具有单轴晶体结构的第一缓冲膜。 该方法还包括形成覆盖缓冲层的超导层。

公开(公告)号：US20050039672A1

公开(公告)日：2005-02-24

申请号：US10643403

申请日：2003-08-19

申请人： Venkat Selvamanickam ,  Xuming Xiong

发明人： Venkat Selvamanickam ,  Xuming Xiong

IPC分类号： C30B25/18 ,  C30B29/22 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B25/18 ,  C30B29/22 ,  Y10S505/929

摘要： Methods for biaxially-texturing a surface-region of an amorphous material are disclosed, comprising depositing an amorphous material onto a substrate, and supplying active oxygen near the substrate during ion beam bombardment of the amorphous material to create an amorphous material having a biaxially textured surface, wherein the ion beam bombardment occurs at a predetermined oblique incident angle. Methods for producing high-temperature coated superconductors are also disclosed, comprising depositing an amorphous buffer film onto a metal alloy substrate, bombarding a surface-region of the amorphous buffer film with an ion beam at an oblique incident angle while supplying active oxygen to the surface-region of the amorphous buffer film in order to create a biaxially textured surface-region thereon, and growing a superconducting film on the biaxially textured surface-region of the amorphous buffer film to create a high-temperature coated superconductor.

摘要翻译： 揭示了对非晶材料的表面区域进行双轴织构的方法，包括在衬底上沉积无定形材料，并在非晶材料的离子束轰击期间在衬底附近提供活性氧以产生具有双轴织构表面的无定形材料 其中离子束轰击以预定的倾斜入射角发生。 还公开了生产高温涂层超导体的方法，包括在金属合金基底上沉积无定形缓冲膜，用离子束以斜入射角轰击非晶缓冲膜的表面区域，同时向表面提供活性氧 以在其上产生双轴织构化的表面区域，并在非晶缓冲膜的双轴纹理化表面区域上生长超导膜以产生高温涂覆的超导体。

公开(公告)号：US08588875B2

公开(公告)日：2013-11-19

申请号：US12691325

申请日：2010-01-21

申请人： Juan Carlos H. Llambes ,  Xuming Xiong

发明人： Juan Carlos H. Llambes ,  Xuming Xiong

IPC分类号： H01L39/00

CPC分类号： H02H9/023 ,  H01F29/10 ,  H01F29/14 ,  H01F2006/001 ,  Y02E40/69 ,  Y10T29/49014

摘要： A superconducting fault current-limiter is provided, including a superconducting element configured to resistively or inductively limit a fault current, and one or more variable-impedance shunts electrically coupled in parallel with the superconducting element. The variable-impedance shunt(s) is configured to present a first impedance during a superconducting state of the superconducting element and a second impedance during a normal resistive state of the superconducting element. The superconducting element transitions from the superconducting state to the normal resistive state responsive to the fault current, and responsive thereto, the variable-impedance shunt(s) transitions from the first to the second impedance. The second impedance of the variable-impedance shunt(s) is a lower impedance than the first impedance, which facilitates current flow through the variable-impedance shunt(s) during a recovery transition of the superconducting element from the normal resistive state to the superconducting state, and thus, facilitates recovery of the superconducting element under load.

摘要翻译： 提供了一种超导故障电流限制器，包括被配置为电阻或电感地限制故障电流的超导元件以及与超导元件并联电耦合的一个或多个可变阻抗并联电路。 可变阻抗分流器被配置为在超导元件的超导状态期间呈现第一阻抗，并且在超导元件的正常电阻状态期间呈现第二阻抗。 超导元件响应于故障电流从超导状态转变到正常电阻状态，并响应于此，可变阻抗分流从第一阻抗转换到第二阻抗。 可变阻抗分流器的第二阻抗是比第一阻抗低的阻抗，这有助于在超导元件从正常电阻状态到超导的恢复转变期间电流流过可变阻抗分流器 状态，从而有助于在负载下回收超导元件。

公开(公告)号：US07781377B2

公开(公告)日：2010-08-24

申请号：US11319971

申请日：2005-12-28

申请人： Xuming Xiong ,  Venkat Selvamanickam ,  Ping Hou

发明人： Xuming Xiong ,  Venkat Selvamanickam ,  Ping Hou

IPC分类号： H01L39/24

CPC分类号： H01L39/2461 ,  H01L39/143 ,  Y10T428/12028

摘要： A superconducting article is provided that includes a substrate, an anti-epitaxial film over the substrate, a buffer film having biaxial crystal texture over the anti-epitaxial film, and a superconductor layer over the second buffer film. Also provided is a superconducting article as a tape, in a power cable, and a power transformer.

摘要翻译： 提供了一种超导制品，其包括衬底，在衬底上的抗外延膜，在抗外延膜上具有双轴晶体结构的缓冲膜，以及在第二缓冲膜上的超导体层。 还提供了作为带的超导制品，电力电缆和电力变压器。

公开(公告)号：US07718574B2

公开(公告)日：2010-05-18

申请号：US10821010

申请日：2004-04-08

申请人： Xuming Xiong ,  Venkat Selvamanickam

发明人： Xuming Xiong ,  Venkat Selvamanickam

IPC分类号： H01L39/00 ,  H01B12/00 ,  B05D5/12

CPC分类号： C23C14/30 ,  C23C14/08 ,  C23C14/225 ,  C23C14/48 ,  H01L39/2461 ,  Y10S428/93 ,  Y10S505/73

摘要： Methods for depositing, at a very high deposition rate, a biaxially-textured film on a continuously moving metal tape substrate are disclosed. These methods comprise: depositing a film on the substrate with a deposition flux having an oblique incident angle of about 5° to about 80° from the substrate normal, while simultaneously bombarding the deposited film using an ion beam at an ion beam incident angle arranged along either a best ion texture direction of the film or along a second best ion texture direction of the film, thereby forming the biaxially-textured film, wherein a deposition flux incident plane is arranged parallel to a direction along which the biaxially-textured film has a fast in-plane growth rate. Superconducting articles comprising a substrate, a biaxially-textured film deposited on said substrate by said methods above; and a superconducting layer disposed on the biaxially-textured film are also disclosed.

摘要翻译： 公开了以非常高的沉积速率在连续移动的金属带基材上沉积双轴织构的膜的方法。 这些方法包括：在衬底上沉积具有与衬底法线约5°至约80°的倾斜入射角的沉积焊剂的衬底，同时使用沿离子束入射角度的离子束轰击沉积膜 是膜的最佳离子结构方向或沿着膜的第二最佳离子结构方向，从而形成双轴织构化膜，其中沉积磁通入射平面平行于双轴织构膜所具有的方向 快速的飞机内增长率。 超导物品包括基底，通过上述方法沉积在所述基底上的双轴织构化膜; 并且还公开了设置在双轴织构膜上的超导层。

公开(公告)号：US20070238619A1

公开(公告)日：2007-10-11

申请号：US11221144

申请日：2005-09-06

申请人： Xuming Xiong

发明人： Xuming Xiong

IPC分类号： H01L39/24 ,  H01B12/00

CPC分类号： H01L39/2461

摘要： A superconductor component is disclosed that includes a metal alloy substrate having a dimension ratio of not less than 10, a compliance layer overlying the substrate, the compliance layer being comprised of an amorphous or nanocrystalline ceramic material having an average grain size not greater than 50 nm, and an IBAD buffer layer overlying the compliance layer. The IBAD buffer layer has a biaxial crystal texture and comprises a material from the group consisting of fluorite type materials, pyrochlore type materials, rare earth C-type materials, non-cubic materials, and layer structured materials. A superconductor layer overlies the IBAD buffer layer

摘要翻译： 公开了一种超导体部件，其包括尺寸比不小于10的金属合金基板，覆盖基板的柔顺层，柔性层由平均粒径不大于50nm的非晶或纳米晶体陶瓷材料构成 以及覆盖顺应性层的IBAD缓冲层。 IBAD缓冲层具有双轴晶体结构，并且包括由萤石型材料，烧绿石型材料，稀土C型材料，非立方体材料和层结构材料组成的组中的材料。 超导体层覆盖IBAD缓冲层

公开(公告)号：US20050249869A1

公开(公告)日：2005-11-10

申请号：US10842619

申请日：2004-05-10

申请人： Venkat Selvamanickam ,  Xuming Xiong

发明人： Venkat Selvamanickam ,  Xuming Xiong

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/46 ,  C23C14/54 ,  C23C14/58 ,  G01R19/00 ,  H01L39/24

CPC分类号： C23C14/54 ,  C23C14/081 ,  C23C14/46 ,  C23C14/584 ,  G01R19/0061 ,  H01L39/2461

摘要： A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 102, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monitoring spatial ion beam density of the ion beam over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10°.

摘要翻译： 提供一种形成超导体的方法，包括提供尺寸比不小于约10-2的衬底，通过离子束辅助沉积利用和离子束沉积缓冲膜以覆盖衬底 监测离子束在目标区域上的空间离子束密度，以及沉积超导层以覆盖缓冲膜。 可以通过利用具有不小于10°的接受角的离子检测器来进行监视。

公开(公告)号：US20110177953A1

公开(公告)日：2011-07-21

申请号：US12691325

申请日：2010-01-21

申请人： Juan Carlos H. Llambes ,  Xuming Xiong

发明人： Juan Carlos H. Llambes ,  Xuming Xiong

IPC分类号： H01L39/02 ,  H01L39/24 ,  H02H9/00

CPC分类号： H02H9/023 ,  H01F29/10 ,  H01F29/14 ,  H01F2006/001 ,  Y02E40/69 ,  Y10T29/49014

摘要： A superconducting fault current-limiter is provided, including a superconducting element configured to resistively or inductively limit a fault current, and one or more variable-impedance shunts electrically coupled in parallel with the superconducting element. The variable-impedance shunt(s) is configured to present a first impedance during a superconducting state of the superconducting element and a second impedance during a normal resistive state of the superconducting element. The superconducting element transitions from the superconducting state to the normal resistive state responsive to the fault current, and responsive thereto, the variable-impedance shunt(s) transitions from the first to the second impedance. The second impedance of the variable-impedance shunt(s) is a lower impedance than the first impedance, which facilitates current flow through the variable-impedance shunt(s) during a recovery transition of the superconducting element from the normal resistive state to the superconducting state, and thus, facilitates recovery of the superconducting element under load.

摘要翻译： 提供了一种超导故障电流限制器，包括被配置为电阻或电感地限制故障电流的超导元件以及与超导元件并联电耦合的一个或多个可变阻抗并联电路。 可变阻抗分流器被配置为在超导元件的超导状态期间呈现第一阻抗，并且在超导元件的正常电阻状态期间呈现第二阻抗。 超导元件响应于故障电流从超导状态转变到正常电阻状态，并响应于此，可变阻抗分流从第一阻抗转换到第二阻抗。 可变阻抗分流器的第二阻抗是比第一阻抗低的阻抗，这有助于在超导元件从正常电阻状态到超导的恢复转变期间电流流过可变阻抗分流器 状态，从而有助于在负载下回收超导元件。

公开(公告)号：US20070149410A1

公开(公告)日：2007-06-28

申请号：US11319971

申请日：2005-12-28

申请人： Xuming Xiong ,  Venkat Selvamanickam ,  Ping Hou

发明人： Xuming Xiong ,  Venkat Selvamanickam ,  Ping Hou

IPC分类号： H01L39/24

CPC分类号： H01L39/2461 ,  H01L39/143 ,  Y10T428/12028

摘要： A superconducting article is provided that includes a substrate, an anti-epitaxial film over the substrate, a buffer film having biaxial crystal texture over the anti-epitaxial film, and a superconductor layer over the second buffer film. Also provided is a superconducting article as a tape, in a power cable, and a power transformer.

摘要翻译： 提供了一种超导制品，其包括衬底，在衬底上的抗外延膜，在抗外延膜上具有双轴晶体结构的缓冲膜，以及在第二缓冲膜上的超导体层。 还提供了作为带的超导制品，电力电缆和电力变压器。

公开(公告)号：US20050239659A1

公开(公告)日：2005-10-27

申请号：US10821010

申请日：2004-04-08

申请人： Xuming Xiong ,  Venkat Selvamanickam

发明人： Xuming Xiong ,  Venkat Selvamanickam

IPC分类号： C23C14/08 ,  C23C14/22 ,  C23C14/30 ,  C23C14/48 ,  H01L39/00 ,  H01L39/24

CPC分类号： C23C14/30 ,  C23C14/08 ,  C23C14/225 ,  C23C14/48 ,  H01L39/2461 ,  Y10S428/93 ,  Y10S505/73

摘要： Methods for depositing, at a very high deposition rate, a biaxially-textured film on a continuously moving metal tape substrate are disclosed. These methods comprise: depositing a film on the substrate with a deposition flux having an oblique incident angle of about 5° to about 80° from the substrate normal, while simultaneously bombarding the deposited film using an ion beam at an ion beam incident angle arranged along either a best ion texture direction of the film or along a second best ion texture direction of the film, thereby forming the biaxially-textured film, wherein a deposition flux incident plane is arranged parallel to a direction along which the biaxially-textured film has a fast in-plane growth rate. Superconducting articles comprising a substrate, a biaxially-textured film deposited on said substrate by said methods above; and a superconducting layer disposed on the biaxially-textured film are also disclosed.

摘要翻译： 公开了以非常高的沉积速率在连续移动的金属带基材上沉积双轴织构的膜的方法。 这些方法包括：在衬底上沉积具有与衬底法线约5°至约80°的倾斜入射角的沉积焊剂的衬底，同时使用沿离子束入射角度的离子束轰击沉积膜 是膜的最佳离子结构方向或沿着膜的第二最佳离子结构方向，从而形成双轴织构化膜，其中沉积磁通入射平面平行于双轴织构膜所具有的方向 快速的飞机内增长率。 超导物品包括基底，通过上述方法沉积在所述基底上的双轴织构化膜; 并且还公开了设置在双轴织构膜上的超导层。