公开(公告)号：US11152300B2

公开(公告)日：2021-10-19

申请号：US13234205

申请日：2011-09-16

申请人： Baozhen Li ,  Yan Zun Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

发明人： Baozhen Li ,  Yan Zun Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

IPC分类号： H01L23/525 ,  H01L21/326

摘要： An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.

公开(公告)号：US20140021578A1

公开(公告)日：2014-01-23

申请号：US13552106

申请日：2012-07-18

申请人： Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

发明人： Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

IPC分类号： H01L23/525 ,  H01L21/768

CPC分类号： H01L23/5256 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.

公开(公告)号：US20120275208A1

公开(公告)日：2012-11-01

申请号：US13095164

申请日：2011-04-27

申请人： Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

发明人： Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

IPC分类号： G11C17/16 ,  H01L21/8238 ,  H01L23/62

CPC分类号： H01L23/62 ,  G11C17/16 ,  H01L21/02532 ,  H01L21/28518 ,  H01L21/76886 ,  H01L21/823814 ,  H01L21/84 ,  H01L23/5256 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.

摘要翻译： 电熔丝在半导体衬底的表面上具有阳极接触。 电熔丝在半导体衬底的与阳极接触件间隔开的表面上具有阴极接触。 电熔丝在衬底内具有连接阳极接触件和阴极接触件的连接。 该连接件包括半导体层和硅化物层。 硅化物层延伸超过阳极接触。 硅化物层的另一端延伸超过阴极接触。 在硅化物层之下的阳极接触和阴极接触之间的半导体层中嵌入硅锗区。

公开(公告)号：US08630108B2

公开(公告)日：2014-01-14

申请号：US13076489

申请日：2011-03-31

申请人： Yan-Zun Li

发明人： Yan-Zun Li

IPC分类号： G11C17/00

CPC分类号： G11C17/08 ,  G11C17/126 ,  G11C29/789

摘要： An alternative electrical fuse structure, which may be similar to or identical with an insulated gate field effect transistor (“IGFET”) of advanced CMOS technology, can be very area efficient and programmable at relatively low voltages, e.g., programming voltages between 1.5 V and 2.5 V. A method is provided for programming an electrical fuse having the structure of an IGFET to permanently electrically isolate the drain of the IGFET from its source. In this way, the step of programming the IGFET fuse can increase a resistance between the source and the drain of the IGFET from a pre-programming value to a post-programming value by two or more orders of magnitude when any given gate-source voltage value and any given drain-source voltage value within normal operational ranges of the IGFET are applied thereto.

摘要翻译： 可以与先进CMOS技术的绝缘栅场效应晶体管（“IGFET”）类似或相同的替代电熔丝结构可以在相对低的电压下非常地面积有效且可编程，例如，编程电压在1.5V和 2.5V。提供了一种用于编程具有IGFET结构的电熔丝的方法，以将IGFET的漏极与其源极永久地电隔离。 以这种方式，编程IGFET熔丝的步骤可以将IGFET的源极和漏极之间的电阻从预编程值增加到后编程值两个或更多个数量级，当任何给定的栅极 - 源极电压 值和在IGFET的正常工作范围内的任何给定的漏极 - 源极电压值被施加到其上。

公开(公告)号：US20130071998A1

公开(公告)日：2013-03-21

申请号：US13234205

申请日：2011-09-16

申请人： Baozhen Li ,  Yan Zun Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

发明人： Baozhen Li ,  Yan Zun Li ,  Keith Kwong Hon Wong ,  Chih-Chao Yang

IPC分类号： H01L21/326 ,  H01L21/28 ,  H01L23/52

CPC分类号： H01L23/5256 ,  H01L21/326 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrical fuse device is disclosed. A circuit apparatus can include the fuse device, a first circuit element and a second circuit element. The fuse includes a first contact that has a first electromigration resistance, a second contact that has a second electromigration resistance and a metal line, which is coupled to the first contact and to the second contact, that has a third electromigration resistance that is lower than the second electromigration resistance. The first circuit element is coupled to the first contact and the second circuit element coupled to the second contact. The fuse is configured to conduct a programming current from the first contact to the second contact through the metal line. Further, the programming current causes the metal line to electromigrate away from the second contact to electrically isolate the second circuit element from the first circuit element.

摘要翻译： 公开了一种电熔丝装置。 电路装置可以包括熔丝装置，第一电路元件和第二电路元件。 熔丝包括具有第一电迁移电阻的第一触点，具有第二电迁移电阻的第二触点和耦合到第一触点和第二触点的金属线，其具有低于 第二次电迁移阻力。 第一电路元件耦合到第一触点，而第二电路元件耦合到第二触点。 保险丝被配置为通过金属线将编程电流从第一触点传导到第二触点。 此外，编程电流使金属线电离远离第二触点，以将第二电路元件与第一电路元件电隔离。

公开(公告)号：US08350264B2

公开(公告)日：2013-01-08

申请号：US12835764

申请日：2010-07-14

申请人： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

发明人： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

IPC分类号： H01L29/04

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse is provided having a unitary monocrystalline semiconductor body including first and second semiconductor regions each having the same first conductivity type, and a third semiconductor region between the first and second semiconductor regions which has a second conductivity type opposite from the first conductivity type. An anode and a cathode can be electrically connected with the first semiconductor region. A conductive region including a metal, a conductive compound of a metal or an alloy of a metal can contact the first semiconductor region and extend between the cathode and the anode. The antifuse can further include a contact electrically connected with the second semiconductor region. In this way, the antifuse can be configured such that the application of a programming voltage between the anode and the cathode heats the first semiconductor region sufficiently to reach a temperature which drives a dopant outwardly therefrom, causing an edge of the first semiconductor region to move closer to an adjacent edge of the second semiconductor region, thus permanently reducing electrical resistance between the first and second semiconductor regions by one or more orders of magnitude.

摘要翻译： 提供一种具有单一单晶半导体本体的反熔丝，该单体半导体本体包括具有相同的第一导电类型的第一和第二半导体区域以及具有与第一导电类型相反的第二导电类型的第一和第二半导体区域之间的第三半导体区域。 阳极和阴极可以与第一半导体区域电连接。 包括金属，金属的导电化合物或金属的合金的导电区域可以接触第一半导体区域并在阴极和阳极之间延伸。 反熔丝还可以包括与第二半导体区域电连接的触点。 以这种方式，反熔丝可被配置为使得在阳极和阴极之间施加编程电压将第一半导体区域充分加热以达到从其向外驱动掺杂剂的温度，从而使第一半导体区域的边缘移动 更靠近第二半导体区域的相邻边缘，从而将第一和第二半导体区域之间的电阻永久地减小一个或多个数量级。

公开(公告)号：US20120250389A1

公开(公告)日：2012-10-04

申请号：US13076489

申请日：2011-03-31

申请人： YAN-ZUN LI

发明人： YAN-ZUN LI

IPC分类号： G11C17/08

CPC分类号： G11C17/08 ,  G11C17/126 ,  G11C29/789

摘要： An alternative electrical fuse structure, which may be similar to or identical with an insulated gate field effect transistor (“IGFET”) of advanced CMOS technology, can be very area efficient and programmable at relatively low voltages, e.g., programming voltages between 1.5 V and 2.5 V. A method is provided for programming an electrical fuse having the structure of an IGFET to permanently electrically isolate the drain of the IGFET from its source. In this way, the step of programming the IGFET fuse can increase a resistance between the source and the drain of the IGFET from a pre-programming value to a post-programming value by two or more orders of magnitude when any given gate-source voltage value and any given drain-source voltage value within normal operational ranges of the IGFET are applied thereto.

摘要翻译： 可以与先进CMOS技术的绝缘栅场效应晶体管（IGFET）类似或相同的替代电熔丝结构可以在相对较低的电压（例如，1.5V至2.5V之间的编程电压） 提供了一种用于编程具有IGFET结构的电熔丝的方法，以将IGFET的漏极与其源极永久地电隔离。 以这种方式，编程IGFET熔丝的步骤可以将IGFET的源极和漏极之间的电阻从预编程值增加到后编程值两个或更多个数量级，当任何给定的栅极 - 源极电压 值和在IGFET的正常工作范围内的任何给定的漏极 - 源极电压值被施加到其上。

公开(公告)号：US20130063202A1

公开(公告)日：2013-03-14

申请号：US13612938

申请日：2012-09-13

申请人： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

发明人： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

IPC分类号： H01L23/544 ,  H01H37/76

CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse has first and second semiconductor regions having one conductivity type and a third semiconductor region therebetween having an opposite conductivity type. A conductive region contacting the first region has a long dimension in a second direction transverse to the direction of a long dimension of a gate. An antifuse anode is spaced apart from the first region in the second direction and a contact is connected with the second region. Applying a programming voltage between the anode and the contact with gate bias sufficient to fully turn on field effect transistor operation of the antifuse heats the first region to drive a dopant outwardly, causing an edge of the first region to move closer to an edge of the second region and reduce electrical resistance between the first and second regions by an one or more orders of magnitude.

摘要翻译： 反熔丝具有一个导电类型的第一和第二半导体区域和它们之间具有相反导电类型的第三半导体区域。 接触第一区域的导电区域在横向于栅极的长尺寸方向的第二方向上具有长尺寸。 反熔丝阳极在第二方向上与第一区域间隔开，并且触点与第二区域连接。 在阳极和接触之间施加编程电压，栅极偏压足以完全导通反熔丝的场效应晶体管操作加热第一区域以向外驱动掺杂剂，导致第一区域的边缘更接近于 并且将第一和第二区域之间的电阻降低一个或多个数量级。

公开(公告)号：US20120314475A1

公开(公告)日：2012-12-13

申请号：US13158510

申请日：2011-06-13

申请人： YAN ZUN LI

发明人： YAN ZUN LI

IPC分类号： G11C17/08

CPC分类号： G11C17/18 ,  G11C17/16 ,  H01L27/11206 ,  H01L29/1087

摘要： An antifuse can include an insulated gate field effect transistor (“IGFET”) having an active semiconductor region including a body and first regions, i.e., at least one source region and at least one drain region separated from one another by the body. A gate may overlie the body and a body contact is electrically connected with the body. The first regions have opposite conductivity (i.e., n-type or p-type) from the body. The IGFET can be configured such that a programming current through at least one of the first regions and the body contact causes heating sufficient to drive dopant diffusion from the at least one first region into the body and cause an edge of the at least one first region to move closer to an adjacent edge of at least one other of the first regions. In such way, the programming current can permanently reduce electrical resistance by one or more orders of magnitude between the at least one first region and the at least one other first region.

摘要翻译： 反熔丝可以包括具有包括主体的有源半导体区域和第一区域的绝缘栅极场效应晶体管（IGFET），即通过主体彼此分离的至少一个源极区域和至少一个漏极区域。 门可以覆盖身体，并且身体接触件与身体电连接。 第一区域具有与身体相反的导电性（即，n型或p型）。 IGFET可以被配置为使得通过第一区域和身体接触中的至少一个的编程电流引起足以驱动掺杂剂从至少一个第一区域进入体内的掺杂剂扩散并引起至少一个第一区域的边缘 以更靠近第一区域中的至少另一个的相邻边缘移动。 以这种方式，编程电流可以在至少一个第一区域和至少一个其它第一区域之间永久地将电阻降低一个或多个数量级。

公开(公告)号：US08981523B2

公开(公告)日：2015-03-17

申请号：US13419877

申请日：2012-03-14

申请人： Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

发明人： Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

IPC分类号： H01L23/52 ,  H01L23/525 ,  H01L23/532 ,  H01L27/115

CPC分类号： H01L23/5256 ,  H01L23/53204 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. Various embodiments of forming the e-fuse structure include: forming a dummy poly gate structure to contact a surface of a silicon structure, the dummy poly gate structure extending only a part of a length of the silicon structure; and converting an unobstructed portion of the surface of the silicon structure to silicide to form a thinned strip of the silicide between two end regions.

摘要翻译： 公开了形成电可编程熔丝（e熔丝）结构和电熔体结构的方法。 形成e熔丝结构的各种实施例包括：形成虚拟多晶硅结构以接触硅结构的表面，所述虚设多晶硅结构仅延伸所述硅结构的长度的一部分; 以及将所述硅结构的表面的无障碍部分转化为硅化物以在两个端部区域之间形成所述硅化物的薄化带。