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24 条记录 (耗时 0.014 秒)

    Electronic control unit
    2.
    发明申请
    Electronic control unit 有权
    电子控制单元

    公开(公告)号：US20060104000A1

    公开(公告)日：2006-05-18

    申请号：US11201382

    申请日：2005-08-11

    申请人： Masaharu Yuhara ,  Yasuhiro Shiraki ,  Kazuhito Okishio ,  Hiroshi Nakamura ,  Hisato Umemaru ,  Yoshimitsu Takahata ,  Yasuaki Gotoh

    发明人： Masaharu Yuhara ,  Yasuhiro Shiraki ,  Kazuhito Okishio ,  Hiroshi Nakamura ,  Hisato Umemaru ,  Yoshimitsu Takahata ,  Yasuaki Gotoh

    IPC分类号： H02H3/08 ,  H02H9/02

    CPC分类号： H02H9/005 ,  H02H9/046

    摘要： This invention provides an electronic control unit is capable of suppressing electromagnetic noise having a frequency band used in a portable wireless apparatus, and capable of exhibiting a noise resistance property against electromagnetic noise. The electronic control unit including a constant voltage power supply circuit portion, an analog signal inputting circuit portion, and a conversion processing circuit portion, an analog sensor and a driving power supply being connected to the outside, and the unit being connected to the analog sensor through a power supply line and a signal line, in which the analog signal inputting circuit portion includes a current limiting circuit portion, an integrating circuit portion, a current limiting resistor, a signal noise absorbing circuit, and a first bypass capacitor, and capacitance (C1) and parasitic inductance (L1) of the first bypass capacitor are set in a range of 7×106

    摘要翻译： 本发明提供一种电子控制单元，其能够抑制具有在便携式无线装置中使用的频带的电磁噪声，并且能够表现出抗电磁噪声的抗噪声特性。 电子控制单元包括恒压电源电路部分，模拟信号输入电路部分和转换处理电路部分，模拟传感器和驱动电源连接到外部，并且该单元连接到模拟传感器 通过电源线和信号线，其中模拟信号输入电路部分包括限流电路部分，积分电路部分，限流电阻器，信号噪声吸收电路和第一旁路电容器以及电容（ C 1）和第一旁路电容器的寄生电感（L 1）设定在7×10 6 <1 / [2pi✓（L 1xC 1）] <35×10 6的范围内， / SUP>。

    Semiconductor laser
    4.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4759030A

    公开(公告)日：1988-07-19

    申请号：US870948

    申请日：1986-06-05

    申请人： Yoshimasa Murayama ,  Yasutsugu Takeda ,  Michiharu Nakamura ,  Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Naoki Chinone

    发明人： Yoshimasa Murayama ,  Yasutsugu Takeda ,  Michiharu Nakamura ,  Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Naoki Chinone

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/0425

    摘要： A semiconductor laser having high efficiency of luminescence can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction and electrons and holes or excitons formed by a combination of them can be localized not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. More definitely, corrugations or ruggedness having a mean pitch of below 100 nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.

    摘要翻译： 具有高发光效率的半导体激光器可以通过形成电位的空间波动使得电位在与电流流动方向垂直的平面内的位置不同，并且由它们的组合形成的电子和空穴或激子可以是 不仅在当前的流动方向上而且在垂直于电流流动方向的平面内。 更确定地，在半导体激光器的有源层的表面上形成具有低于100nm的平均间距的波纹或粗糙度以及有源层的平均厚度的1/10至1/2的水平差。

    Heterojunction FET with doubly-doped channel
    5.
    发明授权
    Heterojunction FET with doubly-doped channel 失效
    具有双掺杂沟道的异质结FET

    公开(公告)号：US4673959A

    公开(公告)日：1987-06-16

    申请号：US686661

    申请日：1984-12-27

    申请人： Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Yoshimasa Murayama ,  Makoto Morioka ,  Yasushi Sawada ,  Tomoyoshi Mishima ,  Takao Kuroda ,  Eiichi Maruyama

    发明人： Yasuhiro Shiraki ,  Yoshifumi Katayama ,  Yoshimasa Murayama ,  Makoto Morioka ,  Yasushi Sawada ,  Tomoyoshi Mishima ,  Takao Kuroda ,  Eiichi Maruyama

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/205 ,  H01L29/423 ,  H01L29/778 ,  H01L29/80

    CPC分类号： H01L29/42316 ,  H01L29/7781 ,  H01L29/7786

    摘要： There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.

    摘要翻译： 公开了一种半导体器件，其至少包括第一和第二半导体层，该第一和第二半导体层被定位以在它们之间形成异质结，这样的异质结适于形成沟道，用于控制载流子的装置，以及在其的相对边缘上的源极和漏极区域 沟道，其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层，这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。 可以使用多量子阱结构作为较高的杂质活化效率半导体层。 通过利用这种较高的杂质活化效率的半导体层，可以降低构成源区和漏区的半导体区的电阻。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US4605945A

    公开(公告)日：1986-08-12

    申请号：US609446

    申请日：1984-05-11

    申请人： Yoshifumi Katayama ,  Yasuhiro Shiraki ,  Ken Yamaguchi ,  Yoshimasa Murayama ,  Yasushi Sawada ,  Toshiyuki Usagawa ,  Eiichi Maruyama

    发明人： Yoshifumi Katayama ,  Yasuhiro Shiraki ,  Ken Yamaguchi ,  Yoshimasa Murayama ,  Yasushi Sawada ,  Toshiyuki Usagawa ,  Eiichi Maruyama

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L27/06 ,  H01L29/10 ,  H01L29/778 ,  H01L29/80

    CPC分类号： H01L27/0605 ,  H01L29/1075 ,  H01L29/7786 ,  H01L29/7787

    摘要： In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.

    摘要翻译： 在具有布置成形成异质结的至少第一半导体层和第二半导体层的半导体器件中，第一半导体层的导带的边缘的能量位于能量低于导带的边缘的能量 异质结附近的第二半导体层，与第一半导体层电连接的至少一对电极，以及控制在异质结附近诱发的载流子的装置; 一种半导体器件，其特征在于，在所述一对电极之间的所述第一半导体层的至少一部分中包含低杂质浓度区域，与所述一对电极中的每一对相邻的区域是高杂质浓度区域，并且至少 在第一半导体层中包含含有与上述区域中所含的杂质相同或相反的导电型的杂质的一层。

    Electronic control unit
    8.
    发明授权
    Electronic control unit 有权
    电子控制单元

    公开(公告)号：US07187225B2

    公开(公告)日：2007-03-06

    申请号：US11201382

    申请日：2005-08-11

    申请人： Masaharu Yuhara ,  Yasuhiro Shiraki ,  Kazuhito Okishio ,  Hiroshi Nakamura ,  Hisato Umemaru ,  Yoshimitsu Takahata ,  Yasuaki Gotoh

    发明人： Masaharu Yuhara ,  Yasuhiro Shiraki ,  Kazuhito Okishio ,  Hiroshi Nakamura ,  Hisato Umemaru ,  Yoshimitsu Takahata ,  Yasuaki Gotoh

    IPC分类号： H03K5/08

    CPC分类号： H02H9/005 ,  H02H9/046

    摘要： This invention provides an electronic control unit is capable of suppressing electromagnetic noise having a frequency band used in a portable wireless apparatus, and capable of exhibiting a noise resistance property against electromagnetic noise. The electronic control unit including a constant voltage power supply circuit portion, an analog signal inputting circuit portion, and a conversion processing circuit portion, an analog sensor and a driving power supply being connected to the outside, and the unit being connected to the analog sensor through a power supply line and a signal line, in which the analog signal inputting circuit portion includes a current limiting circuit portion, an integrating circuit portion, a current limiting resistor, a signal noise absorbing circuit, and a first bypass capacitor, and capacitance (C1) and parasitic inductance (L1) of the first bypass capacitor are set in a range of 7×106

    摘要翻译： 本发明提供一种电子控制单元，其能够抑制具有在便携式无线装置中使用的频带的电磁噪声，并且能够表现出抗电磁噪声的抗噪声特性。 电子控制单元包括恒压电源电路部分，模拟信号输入电路部分和转换处理电路部分，模拟传感器和驱动电源连接到外部，并且该单元连接到模拟传感器 通过电源线和信号线，其中模拟信号输入电路部分包括限流电路部分，积分电路部分，限流电阻器，信号噪声吸收电路和第一旁路电容器以及电容（ C 1）和第一旁路电容器的寄生电感（L 1）设定在7×10 6 <1 / [2pi√（L 1x C 1）] <35×10 6的范围内， / SUP>。

    Multi-layer printed board
    9.
    发明授权
    Multi-layer printed board 失效
    多层印刷板

    公开(公告)号：US06969808B2

    公开(公告)日：2005-11-29

    申请号：US10663723

    申请日：2003-09-17

    申请人： Yasuhiro Shiraki

    发明人： Yasuhiro Shiraki

    IPC分类号： H05K3/46 ,  H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H05K3/42 ,  H05K7/06

    CPC分类号： H05K1/0219 ,  H05K1/0237 ,  H05K1/116 ,  H05K3/429 ,  H05K2201/09381 ,  H05K2201/09618

    摘要： A multi-layer printed board including signal layers, each signal layer including a signal line, a through-hole, and a ground through-hole. The signal layer includes a land connecting the through-hole and the signal line. An external periphery of the land has a first portion farthest from a center of the land, and a second portion extending a shorter distance from the center of the land than the first portion. A portion of the external periphery of the land opposite to the ground through-hole closest to the center of the land is the second portion. Consequently, impedance matching can be improved even if a signal frequency is high.

    摘要翻译： 包括信号层的多层印刷电路板，每个信号层包括信号线，通孔和地面通孔。 信号层包括连接通孔和信号线的平台。 所述焊盘的外围具有距离所述焊盘的中心最远的第一部分和从所述焊盘的中心延伸的距离小于所述第一部分的第二部分。 与地面中心最靠近的地面通孔相对的地面的外围的一部分是第二部分。 因此，即使信号频率高，也可以提高阻抗匹配。