公开(公告)号：US07582489B2

公开(公告)日：2009-09-01

申请号：US12068988

申请日：2008-02-14

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L21/00 ,  G01B7/30

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US20080145956A1

公开(公告)日：2008-06-19

申请号：US12068988

申请日：2008-02-14

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L21/00

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US06897669B2

公开(公告)日：2005-05-24

申请号：US10635492

申请日：2003-08-07

申请人： Seiichiro Ishio ,  Yasutoshi Suzuki

发明人： Seiichiro Ishio ,  Yasutoshi Suzuki

IPC分类号： H01L21/66 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/52 ,  H01L29/84 ,  G01R31/27 ,  H01L23/58

CPC分类号： H01L24/05 ,  H01L22/32 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48769 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744

摘要： An external connection wire is externally connected and is bonded to a portion of a predetermined exposed region of a bonding pad, which is exposed through a bonding pad opening of a passivation film. The bonding pad opening of the passivation film has a polygonal shape that has a plurality of corners, and each of the plurality of corners has an obtuse angle or is chamfered. A probe pad is electrically connected to the bonding pad through a conductive line covered with the passivation film. The passivation film is also located on the probe pad and further includes a probe pad opening, through which a predetermined exposed region of the probe pad is exposed. The probe pad opening has a polygonal shape that has a plurality of corners, and each of the plurality of corners has an obtuse angle or is chamfered.

摘要翻译： 外部连接线外部连接，并且通过钝化膜的焊盘开口露出的接合焊盘的预定暴露区域的一部分结合。 钝化膜的焊盘开口具有多角形，其具有多个拐角，并且多个拐角中的每一个具有钝角或倒角。 探针焊盘通过覆盖有钝化膜的导电线电连接到焊盘。 钝化膜也位于探针焊盘上，并且还包括探针焊盘开口，探针焊盘的预定暴露区域通过该探针焊盘开口露出。 探针垫开口具有多个角形，多角形，并且多个拐角中的每一个具有钝角或倒角。

公开(公告)号：US06601452B2

公开(公告)日：2003-08-05

申请号：US09866792

申请日：2001-05-30

申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L916

CPC分类号： G01L9/0042 ,  B81B3/0075 ,  B81B2201/0264 ,  B81B2203/0127

摘要： A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R. The radius of curvature R satisfies a formula of: R/S=526·(d/S)2−0.037·(d/S)+a1, where S is an area of the diaphragm, d is a thickness of the diaphragm, and a1 is in a range of 9.6×10−7 to 16×10−7 inclusive.

摘要翻译： 半导体压力传感器具有形成在半导体衬底上的凹部。 凹部具有侧壁，作为用于检测压力的隔膜的底壁，以及设置在侧壁和底壁之间并具有曲率半径R的角部。曲率半径R满足以下公式：其中 S是隔膜的面积，d是隔膜的厚度，a1在9.6×10-7至16×10-7的范围内。

公开(公告)号：US06584852B2

公开(公告)日：2003-07-01

申请号：US10176590

申请日：2002-06-24

申请人： Yasutoshi Suzuki ,  Seiichiro Ishio ,  Tetsuo Fujii ,  Keiichi Shimaoka ,  Hirofumi Funahashi

发明人： Yasutoshi Suzuki ,  Seiichiro Ishio ,  Tetsuo Fujii ,  Keiichi Shimaoka ,  Hirofumi Funahashi

IPC分类号： G01L912

CPC分类号： G01L9/0073

摘要： An electrical capacitance pressure sensor has a lower electrode, a movable electrode, and an upper electrode. A first cavity portion is formed between the lower electrode and the movable electrode. A second cavity portion is formed between the upper electrode and the movable electrode. The substrate has an opening portion that penetrates the substrate from the first surface to the second surface thereof. The lower electrode has at least one first window portion that penetrates the lower electrode from the side of the substrate to the side of the first cavity portion and communicates the cavity portion to the opening portion of the substrate. The upper electrode has at least one second window portion that penetrates the upper electrode from the side of the cavity portion to the outside thereof to communicate the cavity portion with the outside.

摘要翻译： 电容式压力传感器具有下电极，可动电极和上电极。 第一空腔部分形成在下电极和可动电极之间。 第二空腔部分形成在上电极和可动电极之间。 衬底具有从第一表面到第二表面穿透衬底的开口部分。 下电极具有至少一个第一窗口部分，其从基板的侧面到第一空腔部分的侧面穿透下电极，并且将空腔部分连通到基板的开口部分。 上电极具有至少一个第二窗口部分，其从空腔部分的侧面向外部贯穿上部电极，以将空腔部分与外部连通。

公开(公告)号：US06521966B1

公开(公告)日：2003-02-18

申请号：US09547457

申请日：2000-04-12

申请人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： G01L19/147 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01068 ,  H01L2924/00014

摘要： A semiconductor strain sensor in which a sensor element for detecting a strain signal is mounted in a resin package member, which can restrain a creep stress of the package member from affecting to the sensor element. A semiconductor strain sensor is provided with a lead frame integrally molded with a resin package member, and a sensor chip made of silicon. The sensor chip is mounted on one surface of an element mounting portion of the lead frame, and is capable of externally outputting electric signal via a wire in accordance with strain when pressure is applied. An opening portion is provided in the package member, so that the entire area of another surface of the lead frame, where positions beneath the sensor chip, is non-contacted with the package member. Since another surface of the lead frame is non-contacted with the package member at the opening portion, even if the creep occurs in the package member, it can prevent stress (creep stress) undergone in accordance with the creep deformation from being transferred to the sensor chip.

摘要翻译： 一种半导体应变传感器，其中用于检测应变信号的传感器元件安装在树脂封装构件中，其可以抑制封装构件的蠕变应力对传感器元件的影响。 半导体应变传感器设置有与树脂封装构件一体模制的引线框架和由硅制成的传感器芯片。 传感器芯片安装在引线框架的元件安装部分的一个表面上，并且能够在施加压力时根据应变通过导线从外部输出电信号。 开口部分设置在封装构件中，使得引线框架的另一表面的位于传感器芯片下方的位置的整个区域与封装构件不接触。 由于引线框架的另一表面在开口部处与封装构件不接触，所以即使在封装构件中发生蠕变，也可以防止根据蠕变变形而发生的应力（蠕变应力）被转移到 传感器芯片。

公开(公告)号：US6069378A

公开(公告)日：2000-05-30

申请号：US985043

申请日：1997-12-04

申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Keijiro Inoue

发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Keijiro Inoue

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/062 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/113

CPC分类号： H01L27/1443 ,  Y10T428/19 ,  Y10T428/236

摘要： A photo diode and a signal processing circuit are formed on a silicon substrate. The signal processing circuit comprises a PNP transistor and an NPN transistor. A region of the signal processing circuit on the silicon substrate is covered by an aluminum thin film functioning as a shielding film. A covered distance L(.mu.m) is defined as an overhang of the aluminum thin film from the edge of the PNP transistor, and is determined based on a ratio of a minimum current of the PNP transistor, which induces malfunction in the signal processing circuit under the solar radiation, to a current generated in the circuit element when subjected to the solar radiation without the aluminum thin film.

摘要翻译： 在硅衬底上形成光电二极管和信号处理电路。 信号处理电路包括PNP晶体管和NPN晶体管。 硅衬底上的信号处理电路的区域被用作屏蔽膜的铝薄膜覆盖。 覆盖距离L（μm）被定义为来自PNP晶体管的边缘的铝薄膜的突出端，并且基于PNP晶体管的最小电流的比率来确定，该PNP晶体管在信号处理电路中引起故障 在太阳辐射下，当受到没有铝薄膜的太阳辐射时在电路元件中产生的电流。

公开(公告)号：US5779918A

公开(公告)日：1998-07-14

申请号：US800325

申请日：1997-02-14

申请人： Keijiro Inoue ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Keijiro Inoue ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L27/144 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01L27/1443

摘要： A photoelectric transfer device having a light receiving element and a signal processing circuit are formed in a semiconductor substrate, a silicon oxide film is formed on the light receiving element, a first aluminum thin film is deposited on the silicon substrate, and the first aluminum thin film is patterned to make a wire connected with the signal processing circuit and a protective film placed on the silicon oxide film. Thereafter, an inter-layer insulating film is deposited on the silicon substrate while covering the protective film, a portion of the inter-layer insulating film placed on the protective film is etched and removed, a second aluminum thin film is deposited on the inter-layer insulating film and the protective film, and a portion of the second aluminum thin film placed on the protective film and the protective film are successively etched and removed. Because the inter-layer insulating film placed above the light receiving element is removed, an insulating film placed on the light receiving element is not thinned, so that sensitivity of the photoelectric transfer device can be improved. Also, because the protective film is arranged on the silicon oxide film when the portion of the inter-layer insulating film is etched, the silicon oxide film is not etched, so that a film thickness of the silicon oxide film can be correctly set to a desired value.

摘要翻译： 在半导体衬底中形成具有光接收元件和信号处理电路的光电转移装置，在光接收元件上形成氧化硅膜，在硅衬底上沉积第一铝薄膜，并将第一铝薄片 图案化膜以形成与信号处理电路连接的电线和放置在氧化硅膜上的保护膜。 此后，在覆盖保护膜的同时，在硅衬底上沉积层间绝缘膜，蚀刻除去放置在保护膜上的层间绝缘膜的一部分，在第二铝薄膜上淀积第二铝薄膜， 层状绝缘膜和保护膜，并且依次蚀刻除去放置在保护膜和保护膜上的第二铝薄膜的一部分。 由于去除了置于光接收元件上方的层间绝缘膜，所以放置在光接收元件上的绝缘膜不会变薄，从而可以提高光电转移装置的灵敏度。 此外，由于当层间绝缘膜的部分被蚀刻时保护膜被布置在氧化硅膜上，因此氧化硅膜不被蚀刻，使得氧化硅膜的膜厚可以被正确地设定为 所需值。

公开(公告)号：US5736061A

公开(公告)日：1998-04-07

申请号：US671536

申请日：1996-06-27

申请人： Tsuyoshi Fukada ,  Yasutoshi Suzuki ,  Koushu Satoh ,  Hiroaki Kawashima

发明人： Tsuyoshi Fukada ,  Yasutoshi Suzuki ,  Koushu Satoh ,  Hiroaki Kawashima

IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/04 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  B44C1/22

CPC分类号： G01L9/0042

摘要： A semiconductor sensor mount is formed as follows: through holes are formed that penetrate a glass plate; and then the glass plate having the through holes is dipped into hydrofluoric acid etchant to smooth the inner peripheral surfaces of the respective through holes. By etching the inner peripheral surfaces of the respective through holes after the through hole formation, minute roughness and cracks formed on the inner peripheral surfaces are removed, and thereby the areas for adsorbing gas are substantially reduced. That is, vacuums within the through holes can be maintained at a high degree during the anodic bonding, whereby undesirable electric discharge phenomena are prevented even if a relatively high voltage is applied during the anodic bonding. Accordingly, the yield of products can be improved while improving productivity.

摘要翻译： 如下形成半导体传感器座：穿透玻璃板的通孔; 然后将具有通孔的玻璃板浸入氢氟酸蚀刻剂中以平滑相应通孔的内周表面。 通过在通孔形成后蚀刻各个通孔的内周面，去除在内周面上形成的微小的粗糙度和裂纹，从而大大减少了吸附气体的区域。 也就是说，在阳极接合期间，通孔内的真空度可以保持在很高程度，因此即使在阳极接合期间施加相对较高的电压，也防止了不期望的放电现象。 因此，可以提高产品的产率，同时提高生产率。

公开(公告)号：US5594236A

公开(公告)日：1997-01-14

申请号：US356083

申请日：1994-12-14

申请人： Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Koki Mizuno ,  Inao Toyoda ,  Yukio Tsuzuki

发明人： Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Koki Mizuno ,  Inao Toyoda ,  Yukio Tsuzuki

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01J40/14

CPC分类号： H01L31/0203 ,  H01L24/05 ,  H01L31/02164 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2924/12036 ,  H01L2924/12043

摘要： A sunlight sensor is provided which detects sunlight by means of a semiconductor device and achieves the desired elevation angle characteristics. The sunlight sensor is implemented as a semiconductor device having p+ layers 10 and 11 as a light-responsive section and an n+ or n layer 9 as a light-nonresponsive section, and additionally having a light-detection element 2 which outputs a detection signal responsive to the amount of light received by the p+ layers 10 and 11. A light-transparent molding 4 is provided at least over the light-detection element 2, and additionally a light-cutoff mask 5 is provided on the transparent molding 4. The relative positions of the light-cutoff mask, the p+ layers 10 and 11, and the n+ or n layer 9 are then established. By doing this, of the shadow of the light-cutoff mask 5 which is created when incident sunlight 13 and 14 strikes the light-detection element, the surface area of at least the part of the shadow which falls on the p+ layers 10 and 11 and the part of the shadow that falls on the n+ or n layer 9 are controlled so as to obtain the desired elevation angle characteristics.

摘要翻译： 提供了通过半导体装置检测太阳光并实现期望的仰角特性的阳光传感器。 太阳光传感器被实现为具有作为光响应部分的p +层10和11以及作为光无响应部分的n +或n层9的半导体器件，并且另外具有响应性地输出检测信号的光检测元件2 相对于由p +层10和11接收的光量。透光模制件4至少设置在光检测元件2上，另外在透明模制件4上设置有光屏蔽5。 然后建立遮光掩模，p +层10和11以及n +或n层9的位置。 通过这样做，当入射太阳光13和14撞击光检测元件时产生的遮光掩模5的阴影中，至少部分阴影部分落在p +层10和11上的表面积 并且控制落在n +或n层9上的阴影的一部分以获得期望的仰角特性。