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    Substrate positioning on a vacuum chuck
    2.
    发明申请
    Substrate positioning on a vacuum chuck 审中-公开
    基板定位在真空吸盘上

    公开(公告)号：US20090197356A1

    公开(公告)日：2009-08-06

    申请号：US12383623

    申请日：2009-03-27

    申请人： Won B. Bang ,  Yen-Kun Victor Wang

    发明人： Won B. Bang ,  Yen-Kun Victor Wang

    IPC分类号： C23C16/52 ,  B05C11/115 ,  H01L21/66

    CPC分类号： H01L21/67259

    摘要： We have discovered a method of using the vacuum chuck/heater upon which a substrate wafer is positioned to determine whether the wafer is properly placed on the vacuum chuck. The method employs measurement of a rate of increase in pressure in a confined space beneath the substrate. Because the substrate is not hermetically sealed to the upper surface of the vacuum chuck/heater apparatus, pressure from the processing chamber above the substrate surface tends to leak around the edges of the substrate and into the space beneath the substrate which is at a lower pressure. A pressure sensing device, such as a pressure transducer is in communication with a confined volume present beneath the substrate. The rate of pressure increase in the confined volume is measured. If the substrate is well positioned on the vacuum chuck/heater apparatus, the rate of pressure increase in the confined volume beneath the substrate is slow. If the substrate is not well positioned on the vacuum chuck/heater apparatus, the rate of pressure increase is more rapid.

    摘要翻译： 我们已经发现了使用真空卡盘/加热器的方法，在该方法上放置基板晶片以确定晶片是否被适当地放置在真空卡盘上。 该方法采用基底下方的限制空间内的压力增加率的测量。 因为基板没有气密地密封到真空卡盘/加热器装置的上表面，所以来自基板表面上方的处理室的压力倾向于在基板的边缘周围泄漏到位于较低压力的基板下方的空间 。 诸如压力传感器的压力感测装置与存在于基底下方的限定体积连通。 测量限制体积内的压力增加率。 如果衬底位于真空吸盘/加热器装置上，则衬底下限制体积内的压力增加速度较慢。 如果基板没有很好地定位在真空吸盘/加热器装置上，则压力增加的速度更快。

    SUBSTRATE SUPPORT PROVIDING GAP HEIGHT AND PLANARIZATION ADJUSTMENT IN PLASMA PROCESSING CHAMBER
    3.
    发明申请
    SUBSTRATE SUPPORT PROVIDING GAP HEIGHT AND PLANARIZATION ADJUSTMENT IN PLASMA PROCESSING CHAMBER 有权
    基板支撑在等离子体加工室中提供缝隙高度和平面调整

    公开(公告)号：US20130323860A1

    公开(公告)日：2013-12-05

    申请号：US13485166

    申请日：2012-05-31

    申请人： Jerrel Kent Antolik ,  Yen-kun Victor Wang ,  John Holland

    发明人： Jerrel Kent Antolik ,  Yen-kun Victor Wang ,  John Holland

    IPC分类号： H01L21/687 ,  C23C16/505 ,  H01L21/3065 ,  H01L21/66

    CPC分类号： H01J37/32091 ,  H01J37/32568 ,  H01L21/67069 ,  H01L21/6719

    摘要： A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support aim is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.

    摘要翻译： 一种用于等离子体处理设备的半导体衬底支撑体包括具有增压室的卡盘体和在气室与吸盘主体的外周之间延伸的三个径向延伸的孔，其中卡盘体的尺寸设计成支撑具有直径 至少450毫米。 半导体衬底支撑件还包括三个管状支撑臂，其包括从卡盘主体的外周径向向外延伸的第一部分和从第一部分垂直延伸的第二部分。 管状支撑臂提供穿过其中的通道，其与卡盘主体中的相应孔连通。 每个管状支撑目标的第二部分构造成与腔室外部的相应致动机构接合，可操作以实现等离子体处理室内部的卡盘体的垂直平移和平坦化。

    Gas baffle and distributor for semiconductor processing chamber
    5.
    发明授权
    Gas baffle and distributor for semiconductor processing chamber 有权
    用于半导体处理室的气体挡板和分配器

    公开(公告)号：US07722719B2

    公开(公告)日：2010-05-25

    申请号：US11075527

    申请日：2005-03-07

    申请人： Lawrence Chung-Lai Lei ,  Siqing Lu ,  Steven E. Gianoulakis ,  Won B. Bang ,  David P. Sun ,  Yen-Kun Victor Wang

    发明人： Lawrence Chung-Lai Lei ,  Siqing Lu ,  Steven E. Gianoulakis ,  Won B. Bang ,  David P. Sun ,  Yen-Kun Victor Wang

    IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

    CPC分类号： H01J37/32449 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/3321

    摘要： Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

    摘要翻译： 本发明的技术涉及将沉积气体分布到基底上。 在一个实施例中，提供了用于处理室的气体分配器。 气体分配器包括具有气体偏转表面和气体分配器面的主体。 气体偏转表面限定清洁气体通路。 气体分配器面设置在与气体偏转表面相对的主体的相反侧上，并朝向衬底支撑构件。 气体分配器面包括升高的台阶和穿过升高台阶的至少一组孔。 所述至少一组孔适于将沉积气体分布在位于所述基板支撑构件上的基板上。

    Low profile thick film heaters in multi-slot bake chamber
    6.
    发明授权
    Low profile thick film heaters in multi-slot bake chamber 失效
    低槽厚膜加热器在多槽烘烤室

    公开(公告)号：US06506994B2

    公开(公告)日：2003-01-14

    申请号：US09882769

    申请日：2001-06-15

    申请人： Yen-Kun Victor Wang ,  Mark Fodor ,  Chen-An Chen ,  Himanshu Pokharna ,  Son T. Nguyen ,  Kelly Fong ,  Inna Shmurun

    发明人： Yen-Kun Victor Wang ,  Mark Fodor ,  Chen-An Chen ,  Himanshu Pokharna ,  Son T. Nguyen ,  Kelly Fong ,  Inna Shmurun

    IPC分类号： F27B514

    CPC分类号： H01L21/67748 ,  C23C16/0209 ,  C23C16/54 ,  C30B25/10 ,  C30B31/14 ,  H01L21/68

    摘要： A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers. The stack is mounted on a drive shaft that extends through the chamber where it interfaces with a drive that traverses the drive shaft in and out of the chamber to align various slots as desired.

    摘要翻译： 用于加热或保持至少一个晶片的温度的加热室组件使用以适当距离堆叠的厚膜加热器板，以在每对相邻的加热器板表面之间形成狭槽。 加热室组件可以在一个或多个处理室附近使用以形成与处理室分离的预热站，或者可以结合在一个或多个这样的处理室的装载锁中。 厚膜加热器板比传统加热板更有效，响应时间更长。 围绕堆叠的加热器板的室是可压力密封的，并且不包括用于在压力下向其供应吹扫气体的吹扫气体入口。 通向室的门打开以允许晶片被插入或移除，并且在关闭时形成压力密封。 堆叠中的槽可与门对准，用于装载和卸载晶片。 该堆叠安装在驱动轴上，该驱动轴延伸穿过该室，在该驱动轴处与驱动轴相接合，该驱动器穿过驱动轴进出腔室，以根据需要对准各种槽。

    VARIABLE SEAL PRESSURE SLIT VALVE DOORS FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
    8.
    发明申请
    VARIABLE SEAL PRESSURE SLIT VALVE DOORS FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
    用于半导体制造设备的可变密封式压力阀门

    公开(公告)号：US20110120017A1

    公开(公告)日：2011-05-26

    申请号：US12949231

    申请日：2010-11-18

    申请人： Won B. Bang ,  Toan Q. Tran ,  Yen-Kun Victor Wang

    发明人： Won B. Bang ,  Toan Q. Tran ,  Yen-Kun Victor Wang

    IPC分类号： E05F15/02

    CPC分类号： H01L21/67126 ,  E05F15/50 ,  E05F15/56 ,  E05Y2201/458 ,  E05Y2800/12

    摘要： Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. A sealing member seals the opening when a door is in a closed position. To selectively open and close the opening, an actuator moves the door. A valve actuator switch provides a first or second pressure to the actuator depending on the pressure inside a first chamber. In one embodiment, a sensor monitors the pressure inside the first chamber.

    摘要翻译： 描述了用于密封半导体处理系统中的两个室之间的开口的门系统的技术。 当门处于关闭位置时，密封构件密封开口。 为了选择性地打开和关闭开口，执行器移动门。 阀致动器开关根据第一室内的压力向致动器提供第一或第二压力。 在一个实施例中，传感器监测第一室内的压力。