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    Light emitting diode with improved light extraction efficiency
    1.
    发明授权
    Light emitting diode with improved light extraction efficiency 有权
    具有提高光提取效率的发光二极管

    公开(公告)号：US09030090B2

    公开(公告)日：2015-05-12

    申请号：US13816572

    申请日：2011-02-19

    申请人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jae Moo Kim ,  Keum Ju Lee

    发明人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jae Moo Kim ,  Keum Ju Lee

    IPC分类号： H01J63/04 ,  H05B33/06 ,  H01L33/38 ,  H01L33/46 ,  H01L33/20

    CPC分类号： H01L33/08 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H05B33/06

    摘要： Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.

    摘要翻译： 公开了具有改进的光提取效率的发光二极管（LED）。 LED包括位于基板上并具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 第一电极焊盘电连接到第一导电类型半导体层。 第二电极焊盘位于衬底上。 绝缘反射层覆盖发光结构的一部分，并且位于第二电极焊盘下方，使得第二电极焊盘与发光结构间隔开。 至少一个上延伸部连接到第二电极焊盘以与第二导电型半导体层电连接。 此外，光提取元件的图案位于第二导电类型半导体层上。

    Light emitting diode
    2.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08946744B2

    公开(公告)日：2015-02-03

    申请号：US12974605

    申请日：2010-12-21

    申请人： Yeo Jin Yoon ,  Won Cheol Seo

    发明人： Yeo Jin Yoon ,  Won Cheol Seo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42

    摘要： The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.

    摘要翻译： 本发明提供了一种发光二极管，其包括形成在基板上的下半导体层; 上半导体层，设置在所述下半导体层上方，暴露所述下半导体层的边缘区域; 形成在上半导体层上的第一电极; 介于所述第一电极和所述上半导体层之间的绝缘层，以向所述下半导体层提供电流; 形成在上半导体层的另一区域上的第二电极，以向上半导体层提供电流。 第一电极包括设置在上半导体层上的电极焊盘和从电极焊盘延伸到暴露的下半导体层的延伸部分。 绝缘层可以具有分布式布拉格反射器结构。

    Light emitting diode with improved luminous efficiency
    3.
    发明授权
    Light emitting diode with improved luminous efficiency 有权
    发光二极管，发光效率提高

    公开(公告)号：US08878220B2

    公开(公告)日：2014-11-04

    申请号：US13209765

    申请日：2011-08-15

    申请人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong

    发明人： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Duk Il Suh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong

    IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42

    CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0091

    摘要： Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.

    摘要翻译： 本发明的示例性实施例涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。 发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。 在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。 第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。 两个第二电极焊盘位于第二侧边缘的相对的远端附近，以向第二导电类型半导体层提供电流。 第一焊盘延伸部从第一电极焊盘延伸，并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

    LIGHT-EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    LIGHT-EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管封装及其制造方法

    公开(公告)号：US20140145633A1

    公开(公告)日：2014-05-29

    申请号：US13825937

    申请日：2010-12-03

    申请人： Won Cheol Seo ,  Yeo Jin Yoon

    发明人： Won Cheol Seo ,  Yeo Jin Yoon

    IPC分类号： H01L33/38 ,  H01L33/08

    CPC分类号： H01L33/385 ,  H01L25/167 ,  H01L33/08 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/16225 ,  H01L2933/0033

    摘要： A Light Emitting Diode (LED) package and a method of manufacturing the same. The LED package includes a substrate. The substrate defines therein a cavity having a tapered shape, a stepped portion formed on the upper end of the cavity, and a through hole formed in the bottom of the cavity. A conductive film fills the through-hole and is formed on the bottom and the side surfaces of the cavity. An LED has a fluorescent layer thereon, and is flip-chip bonded onto the conductive film. An encapsulant encapsulates the cavity. A Zener diode or a rectifier is provided on the silicon substrate.

    摘要翻译： 发光二极管（LED）封装及其制造方法。 LED封装包括基板。 衬底在其中限定具有锥形形状的空腔，形成在空腔的上端上的阶梯部分和形成在空腔底部的通孔。 导电膜填充通孔并形成在空腔的底部和侧表面上。 LED在其上具有荧光层，并且被倒装芯片接合到导电膜上。 密封剂封装空腔。 在硅衬底上提供齐纳二极管或整流器。

    Light emitting device and fabrication method thereof
    6.
    发明授权
    Light emitting device and fabrication method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US08546819B2

    公开(公告)日：2013-10-01

    申请号：US13235063

    申请日：2011-09-16

    申请人： Yeo Jin Yoon ,  Chang Yeon Kim

    发明人： Yeo Jin Yoon ,  Chang Yeon Kim

    IPC分类号： H01L27/15

    CPC分类号： H01L33/60 ,  H01L21/28 ,  H01L21/306 ,  H01L33/0079 ,  H01L33/22

    摘要： A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.

    摘要翻译： 一种制造垂直发光二极管的方法，包括：在牺牲衬底上生长低掺杂的第一半导体层; 在所述低掺杂的第一半导体上形成铝层; 通过阳极氧化铝层形成其中形成有大量孔的AAO层; 使用铝层作为荫罩来蚀刻和图案化低掺杂的第一半导体层，从而形成凹槽; 去除剩余的铝层; 在所述低掺杂的第一半导体层上顺序地形成具有沟槽的高掺杂的第一半导体层，有源层和第二半导体层; 在所述第二半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述沟槽中并与所述高掺杂的第一半导体欧姆接触。

    Light emitting device and method of manufacturing the same
    8.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US08390002B2

    公开(公告)日：2013-03-05

    申请号：US12251735

    申请日：2008-10-15

    申请人： Chang Yeon Kim ,  Yeo Jin Yoon

    发明人： Chang Yeon Kim ,  Yeo Jin Yoon

    IPC分类号： H01L27/15

    CPC分类号： H01L33/24 ,  H01L33/14

    摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

    摘要翻译： 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

    Light emitting diode having distributed Bragg reflector
    9.
    发明授权
    Light emitting diode having distributed Bragg reflector 有权
    具有分布式布拉格反射器的发光二极管

    公开(公告)号：US08373188B2

    公开(公告)日：2013-02-12

    申请号：US13100879

    申请日：2011-05-04

    申请人： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee

    发明人： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

    摘要： Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.

    摘要翻译： 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。 第一分布布拉格反射器具有层叠结构，其具有交替层叠的SiO 2层和Nb 2 O 5层。