公开(公告)号：US07421320B2

公开(公告)日：2008-09-02

申请号：US11245729

申请日：2005-10-06

申请人： Ying C. Yeh

发明人： Ying C. Yeh

IPC分类号： G01C23/00

CPC分类号： B64C13/503

摘要： A system providing mid-value selection (MVS) for control command output in a fly-by-wire system where the fly-by-wire systems includes a plurality of primary flight computers (PFCs) receiving data through integrated flight control buses from actuation control electronics (ACE) for flight crew and status sensor inputs, the PFCs providing data through the flight control buses to the ACE for control signal output, provides elements for receiving in an ACE data from each PFC and receiving a data valid signal with respect to each PFC. Fresh data for each PFC is selected as the data received or past MVS output responsive to the respective data valid signal. Based on a predetermined criterion the system chooses from the PFC fresh data a selected set of PFC fresh data as the MVS output and stores the MVS output for use.

摘要翻译： 一种提供中间值选择（MVS）的系统，用于在线控制系统中的控制命令输出，其中线控线系统包括通过集成飞行控制总线从致动控制接收数据的多个主飞行计算机（PFC） 用于飞行机组和状态传感器输入的电子（ACE），通过飞行控制总线向ACE提供数据以控制信号输出的PFC提供了用于接收来自每个PFC的ACE数据的元件，并且相对于每个PFC接收数据有效信号 PFC。 根据相应的数据有效信号，选择每个PFC的新数据作为接收的数据或过去的MVS输出。 根据预定标准，系统从PFC新鲜数据中选择一组选定的PFC新鲜数据作为MVS输出，并存储要使用的MVS输出。

公开(公告)号：US5008215A

公开(公告)日：1991-04-16

申请号：US377248

申请日：1989-07-07

申请人： Duen J. Chen ,  Guey F. Chi ,  Ying C. Yeh

发明人： Duen J. Chen ,  Guey F. Chi ,  Ying C. Yeh

IPC分类号： H01L43/10

CPC分类号： H01L43/10 ,  Y10S148/003 ,  Y10S148/005 ,  Y10S148/118 ,  Y10S148/152

摘要： A process for preparing high sensitivity indium antimonide film magnetoresistance element. A silicon single crystal wafer is treated with oxidative diffusion to form a layer of silicon oxide on the surface of the silicon single crystal, a layer of indium antimonide is grown on the substrate by vapor deposition, and the indium antimonide layer is then subjected to a specific annealing treatment in which the indium antimonide layer is partially oxidized and then re-crystallized. The resultant magnetoresistance element possessing improved sensitivity, stability and suitable for large scale production is obtained.

摘要翻译： 制备高灵敏度锑锑薄膜磁阻元件的方法。 通过氧化扩散处理硅单晶晶片，以在硅单晶的表面上形成氧化硅层，通过气相沉积在衬底上生长锑化铟层，然后将铟锑化物层 其中锑化铟层被部分氧化然后再结晶的特定退火处理。 获得了具有提高的灵敏度，稳定性并且适合于大规模生产的所得磁阻元件。