-
1.发明申请INCREMENTAL TUNING PROCESS FOR ELECTRICAL RESONATORS BASED ON MECHANICAL MOTION 有权基于机械运动的电动共振器增益调谐过程公开(公告)号：US20080028584A1
公开(公告)日：2008-02-07
申请号：US11869997
申请日：2007-10-10
申请人： Bradley Barber , Yiu-Huen Wong
发明人： Bradley Barber , Yiu-Huen Wong
IPC分类号： H04R17/10
CPC分类号： H03H9/131 , G04F5/063 , H03H3/04 , H03H9/175 , H03H2003/0428 , H04R15/02 , H04R17/10 , H04R31/00 , Y10S29/016 , Y10T29/42 , Y10T29/435 , Y10T29/49004 , Y10T29/49005
摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.
摘要翻译： 本发明是一种用于调节机械谐振器的谐振频率的方法，该机械谐振器的频率取决于整个谐振器厚度。 使用交替选择性蚀刻来从顶部电极去除不同的调节层。 其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。 同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的 谐振器的谐振频率。
-
2.发明授权Method and apparatus for determining and/or improving high power reliability in thin film resonator devices, and a thin film resonator device resultant therefrom 有权用于确定和/或改善薄膜谐振器装置中的高功率可靠性的方法和装置，以及由此产生的薄膜谐振器装置公开(公告)号：US06674291B1
公开(公告)日：2004-01-06
申请号：US09669681
申请日：2000-09-26
IPC分类号： G01R2702
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device. The TFR device with the modified electrode structure can operate at higher power levels and has a longer operational lifetime than what is currently available.
摘要翻译： 已经显示电迁移的影响导致仅在几个小时内对诸如薄膜谐振器（TFR）器件的电子器件的金属电极的损坏，用于在这些器件的工作范围内的测试输入功率。 已经确定这种故障对输入功率的频率敏感。 本发明提供一种用于确定电子设备中的高功率可靠性的方法和装置，以便能够准确地确定电子设备的故障时间，并因此能够预测寿命。 作为用于测试设备的方法的一部分，该确定与施加到电子设备的输入功率的频率无关。 基于上述结果，已经开发了一种TFR器件，其包括保护或电迁移减少层，例如钛沉积在器件的电极上。 具有改进的电极结构的TFR器件可以在更高的功率水平下工作，并且具有比目前可用的更长的工作寿命。
-
公开(公告)号：US06349454B1
公开(公告)日：2002-02-26
申请号：US09363527
申请日：1999-07-29
IPC分类号： H01L4100
CPC分类号： H03H9/174 , H03H3/02 , H03H2003/023 , Y10T29/42
摘要： A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.
摘要翻译： 制造薄膜谐振器（TFR），其具有在生长表面上外延生长的改进的压电膜，导致具有较少晶界的压电膜。 外延生长是指具有晶体取向取自或模拟单晶衬底或生长表面的晶体取向的压电薄膜。 例如，通过在单晶硅衬底上外延生长作为生长表面的压电膜，产生几乎没有或没有晶界的改进的压电膜。 还提供了制造在基板上生长压电膜的TFR的方法。 随后，去除衬底的一部分，并且电极沉积在压电膜的任一侧上。
-
公开(公告)号：US06272039B1
公开(公告)日：2001-08-07
申请号：US09498543
申请日：2000-02-04
IPC分类号： G11C1100
CPC分类号： G11C11/412
摘要： An apparatus and method for constructing a temperature insensitive memory cell. This temperature insensitive memory cell operates as a static random access memory (SRAM) cell if a particular capacitor and transistor configuration is used. The temperature insensitive memory cell apparatus includes at least one transistor having a current leakage, and at least one capacitor electrically connected to the transistor. The capacitor acts as a load element for the memory cell. The capacitor has a temperature dependent capacitor leakage that tracks the current leakage of transistor as said at least one transistor as the transistor varies with temperature.
摘要翻译： 一种用于构建温度不敏感的存储单元的装置和方法。 如果使用特定的电容器和晶体管配置，该温度不敏感的存储器单元作为静态随机存取存储器（SRAM）单元工作。 温度不敏感的存储单元装置包括至少一个具有电流泄漏的晶体管，以及电连接到该晶体管的至少一个电容器。 电容器用作存储单元的负载元件。 电容器具有依赖于温度的电容器泄漏，其随着晶体管随着温度变化而跟踪晶体管的电流泄漏作为所述至少一个晶体管。
-
公开(公告)号：US06232923B1
公开(公告)日：2001-05-15
申请号：US09467664
申请日：1999-11-11
IPC分类号： H01Q138
CPC分类号： H01Q21/065 , H01Q1/38 , H01Q9/0407 , H01Q21/0006
摘要： The conductive layers corresponding to a patch antenna are formed on a single substrate, as by printing a conductive ink. The substrate is in the form of an elongated, non-conductive, flexible sheet with the consecutive antenna layers printed thereon side-by-side. The layers of the antenna can then be brought into superposed alignment by appropriate folding of the sheet. The non-conductive rectangles can be maintained in spaced alignment to the cut-outs by placing a porous non-conductive block of spacing material therebetween. In a preferred embodiment the assembled structure has the various layers bonded together.
摘要翻译： 对应于贴片天线的导电层通过印刷导电油墨而形成在单个基板上。 衬底是细长的非导电柔性片的形式，其上并排印有连续的天线层。 然后可以通过片材的适当折叠使天线的层叠合成对准。 通过在其间放置间隔材料的多孔非导电块，可以将非导电矩形保持与切口间隔对齐。 在优选实施例中，组装结构具有粘结在一起的各种层。
-
公开(公告)号：US5550088A
公开(公告)日：1996-08-27
申请号：US71427
申请日：1993-06-02
IPC分类号： G02B6/13 , G02B6/30 , G02B6/32 , G02B6/36 , G02B6/42 , H01L21/306 , H01L21/308 , H01S5/026 , H01L21/302
CPC分类号： G02B6/32 , G02B6/3692 , G02B6/4292 , H01L21/306 , H01L21/308 , H01L21/3085 , G02B6/3652
摘要： A method is disclosed for forming a self-aligned optical subassembly for supporting an optical fiber and associated optical component(s). In particular, sequential masking layer/silicon substrate etch operations are performed so as to etch, in series, the largest opening first and the narrowest opening last. By following this procedure, axial alignment between tandem grooves is maintained.
摘要翻译： 公开了用于形成用于支撑光纤和相关联的光学部件的自对准光学子组件的方法。 特别地，执行顺序掩模层/硅衬底蚀刻操作，以便串联蚀刻最大的开口第一和最窄的开口。 通过遵循该过程，保持串联槽之间的轴向对准。
-
公开(公告)号：US5448586A
公开(公告)日：1995-09-05
申请号：US124127
申请日：1993-09-20
申请人： Joseph Shmulovich , Yiu-Huen Wong
发明人： Joseph Shmulovich , Yiu-Huen Wong
CPC分类号： H01S3/063 , H01S3/094 , H01S3/1608 , H01S3/2383
摘要： Plural planar optical devices are simultaneously pumped by a single pumping source. Various arrangements for accomplishing such pumping are disclosed. By utilizing these arrangements, the topology and routing of integrated arrays including optical devices are simplified.
摘要翻译： 多个平面光学器件通过单个泵浦源同时泵送。 公开了用于实现这种泵送的各种布置。 通过利用这些布置，简化了包括光学器件的集成阵列的拓扑和路由。
-
公开(公告)号：US5024966A
公开(公告)日：1991-06-18
申请号：US510338
申请日：1990-04-16
CPC分类号： H01S5/02276 , H01L2224/48464 , H01L2924/01013 , H01L2924/01014 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12041 , H01L2924/30107 , H01L2924/3011 , H01S5/0427 , H01S5/06226 , Y10S148/099 , Y10S148/168 , Y10S438/928
摘要： A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser, and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips are coupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance Z.sub.L, and a stripline designed to have an impedance Z.sub.S, the resistance R is chosen such that R+Z.sub.L =Z.sub.S. Utilizing silicon processing techniques, the thin film resistor may be placed adjacent to the laser, reducing the parasitics associated with their interconnection. A conductive via is formed through the substrate to provide a top-side bonding location for connecting the optical device to the bottom metal conductor by providing the top-side site, the parasitic inductance associated with this interconnection is considerably reduced.
摘要翻译： 公开了一种硅基激光器安装结构，其通过减少互连网络中的寄生电感元件的存在来提供诸如激光器的半导体光学器件与外部高频调制电流源之间的改进的互连。 该结构包括通过在硅衬底的顶表面和底表面上沉积金属导电条而形成的带状线传输路径。 导电条在一端耦合到外部调制电流源。 在顶部导电带的第二端和半导体光学器件之间沉积薄膜电阻器。 该薄膜电阻用于提供光学装置与带状线之间的阻抗匹配。 也就是说，对于具有阻抗ZL的激光器和设计成具有阻抗ZS的带状线，选择电阻R使得R + ZL = ZS。 利用硅处理技术，可以将薄膜电阻器放置在与激光器相邻的位置，从而减少与其互连相关联的寄生效应。 通过衬底形成导电通孔，以提供通过提供顶侧部位将光学器件连接到底部金属导体的顶侧接合位置，与该互连相关联的寄生电感显着降低。
-
公开(公告)号：USH40H
公开(公告)日：1986-04-01
申请号：US632053
申请日：1984-07-18
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L29/0619
摘要： The present invention relates to an improved Schottky barrier device wherein the leakage current present in the reverse bias mode attributed to the presence of an electric field at the Schottky barrier (18) is significantly reduced by the inclusion of one or more field shields (22), P.sup.+ -type diffusions located under the metal anode (16) of the Schottky barrier device at the Schottky barrier (18). The P.sup.+ -type field shields, which are disposed in a pattern on the surface of the Schottky barrier, reduce the surface electric field present, thereby significantly reducing the leakage current related thereto.
-
10.发明授权Method of manufacturing and mounting electronic devices to limit the effects of parasitics 有权制造和安装电子设备以限制寄生效应的方法公开(公告)号：US06675450B1
公开(公告)日：2004-01-13
申请号：US09698175
申请日：2000-10-30
IPC分类号： H04R1700
CPC分类号： H03H9/172 , G01R31/2824 , H01L24/81 , H01L2224/8121 , H01L2224/81815 , H01L2924/01019 , H01L2924/14 , H03H3/02 , H03H9/02125 , Y10T29/42 , Y10T29/49144 , Y10T29/49155 , Y10T29/49156 , H01L2924/00
摘要： A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier. The resultant electronic device is essentially immune to the effects or parasitic capacitanaces and parasitic inductances, with the device as mounted being further configured so as to tune out any residual parasitics which may still exist after fabrication.
摘要翻译： 一种制造和安装电子设备以消除寄生效应对设备性能的方法。 在一个方面，在制造期间，器件的衬底表面涂覆有薄的耐蚀刻膜，其用作屏障以允许去除膜下方的衬底材料，产生悬挂结构，剩余的电路层在其上休息。 或者，该装置由与装置成一体的膜制成，并且用作支撑膜。 为了将器件安装在载体或封装上，在器件的导体的端部附近施加焊料凸块，然后将管芯固定到载体或封装上，并将其定位成使得从导体延伸的引线与接合条配合 在载体或包装上。 焊料凸块然后被回流或熔化，以在器件的引线和载体的相应接合条之间建立电连接。 所得到的电子器件基本上免受影响或寄生电容和寄生电感的影响，安装的器件被进一步配置以便调出在制造之后仍然存在的任何残留寄生效应。
-
-
-
-
-
-
-
-
-
搜索结果
44 条记录 (耗时 0.015 秒)