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    PROCESS FOR MANUFACTURING QUARTZ CRYSTAL ELEMENT
    1.
    发明申请
    PROCESS FOR MANUFACTURING QUARTZ CRYSTAL ELEMENT 审中-公开
    制造石英晶体元素的工艺

    公开(公告)号：US20080113202A1

    公开(公告)日：2008-05-15

    申请号：US11939085

    申请日：2007-11-13

    申请人： Naoyuki TAKAHASHI ,  Takato NAKAMURA ,  Satoshi NONAKA ,  Yoshinori KUBO ,  Yoichi SHINRIKI ,  Katsumi TAMANUKI

    发明人： Naoyuki TAKAHASHI ,  Takato NAKAMURA ,  Satoshi NONAKA ,  Yoshinori KUBO ,  Yoichi SHINRIKI ,  Katsumi TAMANUKI

    IPC分类号： C03C3/06

    CPC分类号： C30B29/18 ,  C30B25/02

    摘要： A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

    摘要翻译： 一种制造石英晶体元件的方法包括以下步骤：在具有与石英晶体不同的晶格常数的晶体衬底的表面上形成多个石英层，其中每个石英层由结晶相和非晶形 石英层中的结晶相的相位和百分比远离基板，大于与基板相邻的石英层中的结晶相的百分比; 并且通过硅氧烷和氧之间的反应在石英层的表面上离开衬底产生外延生长的石英晶体膜。

    Process for manufacturing quartz crystal element
    2.
    发明申请
    Process for manufacturing quartz crystal element 失效
    石英晶体元件制造工艺

    公开(公告)号：US20060046076A1

    公开(公告)日：2006-03-02

    申请号：US10926057

    申请日：2004-08-26

    申请人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Yoshinori Kubo ,  Yoichi Shinriki ,  Katsumi Tamanuki

    发明人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Yoshinori Kubo ,  Yoichi Shinriki ,  Katsumi Tamanuki

    IPC分类号： B32B13/04 ,  B32B9/04

    CPC分类号： C30B29/18 ,  C30B25/02

    摘要： A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

    摘要翻译： 一种制造石英晶体元件的方法包括以下步骤：在具有与石英晶体不同的晶格常数的晶体衬底的表面上形成多个石英层，其中每个石英层由结晶相和非晶形 石英层中的结晶相的相位和百分比远离基板，大于与基板相邻的石英层中的结晶相的百分比; 并且通过硅氧烷和氧之间的反应在石英层的表面上离开衬底产生外延生长的石英晶体膜。

    Process for manufacturing quartz crystal element
    3.
    发明授权
    Process for manufacturing quartz crystal element 失效
    石英晶体元件制造工艺

    公开(公告)号：US07311777B2

    公开(公告)日：2007-12-25

    申请号：US10926057

    申请日：2004-08-26

    申请人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Yoshinori Kubo ,  Yoichi Shinriki ,  Katsumi Tamanuki

    发明人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Yoshinori Kubo ,  Yoichi Shinriki ,  Katsumi Tamanuki

    IPC分类号： G02B6/13

    CPC分类号： C30B29/18 ,  C30B25/02

    摘要： A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

    摘要翻译： 一种制造石英晶体元件的方法包括以下步骤：在具有与石英晶体不同的晶格常数的晶体衬底的表面上形成多个石英层，其中每个石英层由结晶相和非晶形 石英层中的结晶相的相位和百分比远离基板，大于与基板相邻的石英层中的结晶相的百分比; 并且通过硅氧烷和氧之间的反应在石英层的表面上离开衬底产生外延生长的石英晶体膜。

    Quartz thin film
    4.
    发明授权
    Quartz thin film 失效
    石英薄膜

    公开(公告)号：US07186295B2

    公开(公告)日：2007-03-06

    申请号：US10727613

    申请日：2003-12-05

    申请人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Hiromi Yagi ,  Yoichi Shinriki ,  Katsumi Tamanuki

    发明人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Hiromi Yagi ,  Yoichi Shinriki ,  Katsumi Tamanuki

    IPC分类号： C30B25/02

    CPC分类号： C30B25/02 ,  C30B29/06 ,  C30B29/10 ,  Y10T428/31504

    摘要： A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

    摘要翻译： 提供了石英薄膜的单晶及其制造方法。 一种生产石英外延薄膜的方法包括以下步骤：在大气压下将作为硅源的硅醇盐汽化，以氯化氢作为反应促进剂将硅醇盐引入底物，并将硅酸乙酯与氧气反应以沉积石英 在基板上。 石英薄膜的单晶具有优异的结晶度和光学性能。

    Quartz oscillator and method for manufacturing the same
    5.
    发明授权
    Quartz oscillator and method for manufacturing the same 失效
    石英振荡器及其制造方法

    公开(公告)号：US06750728B2

    公开(公告)日：2004-06-15

    申请号：US10197805

    申请日：2002-07-19

    申请人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Hiromi Yagi ,  Yoichi Shinriki ,  Katsumi Tamanuki

    发明人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Hiromi Yagi ,  Yoichi Shinriki ,  Katsumi Tamanuki

    IPC分类号： H03B530

    CPC分类号： H03H9/172 ,  H03H3/04 ,  H03H9/19 ,  H03H2003/022

    摘要： A quartz oscillator includes a base, a quartz thin-film formed on the base by epitaxial growth, a vibrating reed portion formed by processing the quartz thin-film, and excitation electrodes for vibrating the vibrating reed portion. At least one of the excitation electrodes may be formed by depositing a metal. The material for the base may include a single-element semiconductor, a compound semiconductor, and an oxide. When a semiconductor is used for the base, a semiconductor circuit may be provided to the base to form a module including a quartz oscillator.

    摘要翻译： 石英振荡器包括基底，通过外延生长在基底上形成的石英薄膜，通过加工石英薄膜形成的振动片部分，以及用于使振动筘部振动的激励电极。 激发电极中的至少一个可以通过沉积金属形成。 用于基底的材料可以包括单元素半导体，化合物半导体和氧化物。 当半导体用于基极时，半导体电路可以设置到基底以形成包括石英振荡器的模块。