公开(公告)号：US20060292298A1

公开(公告)日：2006-12-28

申请号：US11512127

申请日：2006-08-30

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05D1/12 ,  B05D3/00 ,  B05C11/02

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

公开(公告)号：US06589339B2

公开(公告)日：2003-07-08

申请号：US09842395

申请日：2001-04-26

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05C2100

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

公开(公告)号：US06190459B1

公开(公告)日：2001-02-20

申请号：US09210854

申请日：1998-12-15

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

IPC分类号： C23K1600

CPC分类号： H01L21/67017 ,  B05D1/005 ,  B05D3/0453

摘要： A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.

公开(公告)号：US07205024B2

公开(公告)日：2007-04-17

申请号：US10771637

申请日：2004-02-05

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05D3/04

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

摘要翻译： 在转移晶片W之前，产生并排出混合气体，从而抑制了在气体引入室3开始时的溶剂成分的浓度和温度的波动。 将晶片W携带到老化单元中之后的胶凝步骤分为几个步骤。 直到晶片W的温度达到预定的处理温度，混合气体中的溶剂组分的平均浓度相对于晶片W的温度逐渐升高。由此，在将晶片W转移到密封室之后， 可以防止溶剂成分的气体冷凝。

公开(公告)号：US06656273B1

公开(公告)日：2003-12-02

申请号：US09593948

申请日：2000-06-15

申请人： Takayuki Toshima ,  Nobuo Konishi ,  Yoji Mizutani

发明人： Takayuki Toshima ,  Nobuo Konishi ,  Yoji Mizutani

IPC分类号： B05C914

CPC分类号： H01L21/67178 ,  H01L21/6715

摘要： In an organic insulating film coating apparatus, an organic insulating film is applied onto a wafer by a spin coating. Thereafter, the wafer is subjected to heat processing and an inorganic insulating film is applied onto the wafer by a spin coating in an inorganic insulating film coating apparatus. After the coating of the inorganic insulating film, the wafer is subjected to aging processing and exchange-chemical coating processing. Thereafter, a solvent in the coating film is removed in a low-temperature heat processing apparatus and a low-oxygen and high-temperature heat processing apparatus, and thermal processing is performed for the wafer in a low-oxygen curing and cooling processing apparatus. The low-temperature heat processing apparatus, the low-oxygen and high-temperature heat processing apparatus, a delivery section for the wafer between the low-temperature heat processing apparatus and the low-oxygen and high-temperature heat processing apparatus, and a delivery section for the wafer between the low-oxygen and high-temperature heat processing apparatus and the low-oxygen curing and cooling processing apparatus are brought to low-oxygen atmospheres.

摘要翻译： 在有机绝缘膜涂覆装置中，通过旋涂将有机绝缘膜施加到晶片上。 此后，对晶片进行热处理，并且通过无机绝缘膜涂覆设备中的旋涂将无机绝缘膜施加到晶片上。 在无机绝缘膜的涂覆之后，对晶片进行老化处理和交换化学涂覆处理。 然后，在低温热处理装置和低氧高温加热装置中除去涂膜中的溶剂，在低氧固化和冷却处理装置中对晶片进行热处理。 低温热处理装置，低氧高温加热装置，低温加热装置与低氧高温加热装置之间的晶片输送部，输送部 在低氧和高温热处理装置和低氧固化和冷却处理装置之间的晶片的截面被带到低氧气氛。

公开(公告)号：US20070197046A1

公开(公告)日：2007-08-23

申请号：US11785637

申请日：2007-04-19

申请人： Yoji Mizutani ,  Masao Yamaguchi

发明人： Yoji Mizutani ,  Masao Yamaguchi

IPC分类号： H01L21/31

CPC分类号： H01L21/67178 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/3124 ,  H01L21/67109

摘要： An object of the present invention is to form an interlayer insulating film on a substrate and cure the interlayer insulating film in a time shorter than that in the prior art. The present invention is a substrate processing method in which the interlayer insulating film formed on the substrate is irradiated with electron beams in a processing chamber, whereby the interlayer insulating film is cured.

摘要翻译： 本发明的目的是在衬底上形成层间绝缘膜，并在比现有技术更短的时间内使层间绝缘膜固化。 本发明是一种基板处理方法，其中在基板上形成的层间绝缘膜在处理室中被电子束照射，从而使层间绝缘膜固化。

公开(公告)号：US06808567B2

公开(公告)日：2004-10-26

申请号：US10637699

申请日：2003-08-11

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

IPC分类号： C23C1600

CPC分类号： H01L21/67017 ,  B05D1/005 ,  B05D3/0453

摘要： A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.

摘要翻译： 气体流量调节表面部分37a在晶片W的周边部分和密封容器的中心部分之间的中间距离晶片W的前表面最远。 气体流量调节部分37a在围绕排气口35a的中心部分附近向晶片W的前表面突出。 换句话说，在围绕排气口35a的气体流量调节表面部分37a的周边区域中形成有凸部37c。 由于处理气体沿着气体流量调节部分37a的前表面流动，所以处理气体在晶片W的半径方向上均匀地接触晶片W.因此，形成了具有相同厚度的膜。

公开(公告)号：US06979474B2

公开(公告)日：2005-12-27

申请号：US09886213

申请日：2001-06-22

申请人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

发明人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

IPC分类号： H01L21/00 ,  H01L21/677 ,  B05D3/00

CPC分类号： H01L21/67748 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67178

摘要： When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.

摘要翻译： 当涂覆有在高温下氧化的涂布溶液的基材被热处理时，当温度低时，处理气氛的氧浓度降低。 接着，在氧浓度降低的处理气氛中进行基板的热处理。 接着，在完成热处理后经过预定时间后，处理气氛恢复到原来的氧浓度。 由此，能够对涂布液的氧化进行控制，对基板进行热处理。

公开(公告)号：US06248168B1

公开(公告)日：2001-06-19

申请号：US09210759

申请日：1998-12-14

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05C502

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

摘要翻译： 在转移晶片W之前，产生并排出混合气体，从而抑制了在气体引入室3开始时的溶剂成分的浓度和温度的波动。 将晶片W携带到老化单元中之后的胶凝步骤分为几个步骤。 直到晶片W的温度达到预定的处理温度，混合气体中的溶剂组分的平均浓度相对于晶片W的温度逐渐升高。由此，在将晶片W转移到密封室之后， 可以防止溶剂成分的气体冷凝。

公开(公告)号：US06726775B2

公开(公告)日：2004-04-27

申请号：US10421839

申请日：2003-04-24

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： C23C806

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

摘要翻译： 在转移晶片W之前，产生并排出混合气体，从而抑制了在气体引入室3开始时的溶剂成分的浓度和温度的波动。 将晶片W携带到老化单元中之后的胶凝步骤分为几个步骤。 直到晶片W的温度达到预定的处理温度，混合气体中的溶剂组分的平均浓度相对于晶片W的温度逐渐升高。由此，在将晶片W转移到密封室之后， 可以防止溶剂成分的气体冷凝。