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    Nanoparticle production in liquid with multiple-pulse ultrafast laser ablation
    2.
    发明授权
    Nanoparticle production in liquid with multiple-pulse ultrafast laser ablation 有权
    多脉冲超快激光烧蚀液中纳米粒子生产

    公开(公告)号：US08858676B2

    公开(公告)日：2014-10-14

    申请号：US12951423

    申请日：2010-11-22

    Applicant: Bing Liu ,  Zhendong Hu ,  Yong Che ,  Makoto Murakami

    Inventor： Bing Liu ,  Zhendong Hu ,  Yong Che ,  Makoto Murakami

    IPC: B22F9/14 ,  B01J19/12 ,  B22F9/04 ,  B22F1/00

    CPC classification number: B01J19/121 ,  B22F1/0018 ,  B22F9/04 ,  B22F2999/00 ,  Y10S977/889 ,  B22F2202/11

    Abstract: A method for generating nanoparticles in a liquid comprises generating groups of ultrafast laser pulses, each pulse in a group having a pulse duration of from 10 femtoseconds to 200 picoseconds, and each group containing a plurality of pulses with a pulse separation of 1 to 100 nanoseconds and directing the groups of pulses at a target material in a liquid to ablate it. The multiple pulse group ablation produces nanoparticles with a reduced average size, a narrow size distribution, and improved production efficiency compared to prior pulsed ablation systems.

    Abstract translation: 用于在液体中产生纳米颗粒的方法包括产生超快激光脉冲组，组中的每个脉冲具有10飞秒至200皮秒的脉冲持续时间，并且每组包含脉冲间隔为1至100纳秒的多个脉冲 并将脉冲组定向在液体中的目标材料以烧蚀它。 与先前的脉冲消融系统相比，多脉冲组消融产生具有降低的平均尺寸，窄尺寸分布和提高的生产效率的纳米颗粒。

    COMPOSITE NANOPARTICLES AND METHODS FOR MAKING THE SAME
    4.
    发明申请
    COMPOSITE NANOPARTICLES AND METHODS FOR MAKING THE SAME 有权
    复合纳米粒子及其制备方法

    公开(公告)号：US20120168669A1

    公开(公告)日：2012-07-05

    申请号：US12983534

    申请日：2011-01-03

    Applicant: Yong CHE ,  Makoto Murakami ,  Wei Guo

    Inventor： Yong CHE ,  Makoto Murakami ,  Wei Guo

    IPC: C04B35/00 ,  B29B9/02 ,  B32B5/16

    CPC classification number: C04B35/62695 ,  B22F1/0018 ,  B22F1/02 ,  B22F9/04 ,  B22F2999/00 ,  B82Y30/00 ,  C01G49/04 ,  C01G49/08 ,  C01P2004/04 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/80 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C09C1/62 ,  C22C29/00 ,  C22C32/00 ,  H01F1/0054 ,  Y10T428/2982 ,  Y10T428/2991 ,  B22F2202/11

    Abstract: A composite nanoparticle, for example a nanoparticle containing one or a plurality of cores embedded in another material. A composite nanoparticle can be formed by a one step process that includes: ejecting material from a bulk target material using physical energy source, with the bulk target material disposed in a liquid. Composite nanoparticles are formed by cooling at least a portion of the ejected material in the liquid. The composite fine particles may then be collected from the liquid. A product that includes composite fine particles may be formed with laser ablation, and ultrashort laser ablation may be utilized so as to preserve composite nanoparticle stoichiometry. For applications of the composite fine particles, optical properties and/or magnetic properties may be exploited for various applications.

    Abstract translation: 复合纳米颗粒，例如含有嵌入另一材料中的一个或多个芯的纳米颗粒。 复合纳米颗粒可以通过一步法形成，该方法包括：使用物理能源从大量目标材料中喷射材料，其中大量目标材料设置在液体中。 复合纳米颗粒通过冷却至少一部分喷射的液体中的材料形成。 然后可以从液体中收集复合细颗粒。 可以通过激光烧蚀形成包括复合细颗粒的产品，并且可以利用超短激光烧蚀以保持复合纳米颗粒的化学计量。 对于复合细颗粒的应用，可以利用光学性质和/或磁性来进行各种应用。

    METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS
    5.
    发明申请
    METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS 审中-公开
    生产化合物和薄膜的方法

    公开(公告)号：US20120148756A1

    公开(公告)日：2012-06-14

    申请号：US12823584

    申请日：2010-06-25

    Applicant: Bing LIU ,  Zhengong HU ,  Yong CHE

    Inventor： Bing LIU ,  Zhengong HU ,  Yong CHE

    IPC: C23C16/02 ,  B82Y40/00

    CPC classification number: C23C14/086 ,  C23C14/28 ,  C30B23/00 ,  C30B29/16 ,  C30B29/60 ,  Y10T428/25

    Abstract: A method of producing compound nanorods and thin films under a controlled growth mode is described. The method involves ablating compound targets using an ultrafast pulsed laser and depositing the ablated materials onto a substrate. When producing compound nanorods, external catalysts such as pre-deposited metal nanoparticles are not involved. Instead, at the beginning of deposition, simply by varying the fluence at the focal spot on the target, a self-formed seed layer can be introduced for nanorods growth. This provides a simple method of producing high purity nanorods and controlling the growth mode. Three growth modes are covered by the present invention, including nanorod growth, thin film growth, and nano-porous film growth.

    Abstract translation: 描述了在受控生长模式下制备复合纳米棒和薄膜的方法。 该方法包括使用超快速脉冲激光烧蚀化合物靶，并将消融材料沉积在基底上。 当制备复合纳米棒时，不涉及外部催化剂如预沉积的金属纳米颗粒。 相反，在沉积开始时，简单地通过改变目标上焦点处的注量，可以引入自形晶种层用于纳米棒生长。 这提供了生产高纯度纳米棒并控制生长模式的简单方法。 本发明涵盖三种生长方式，包括纳米棒生长，薄膜生长和纳米多孔膜生长。

    Method of fabricating an electrochemical device using ultrafast pulsed laser deposition
    7.
    发明授权
    Method of fabricating an electrochemical device using ultrafast pulsed laser deposition 有权
    使用超快脉冲激光沉积制造电化学装置的方法

    公开(公告)号：US07879410B2

    公开(公告)日：2011-02-01

    申请号：US10863362

    申请日：2004-06-09

    Applicant: Yong Che ,  Zhendong Hu

    Inventor： Yong Che ,  Zhendong Hu

    IPC: H05H1/24

    CPC classification number: C23C14/28 ,  C23C14/086 ,  H01M4/0426 ,  H01M6/40 ,  H01M10/0472 ,  H01M10/058

    Abstract: A method of fabricating a multi-layered thin film electrochemical device is provided. The method comprises: providing a first target material in a chamber; providing a substrate in the chamber; emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of the first intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; depositing the first plasma on the substrate to form a first thin film; providing a second target material in the chamber; emitting a second intermittent laser beam directed at the second target material to generate a second plasma, wherein each pulse of the second intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; and depositing the second plasma on or above the first thin film to form a second thin film.

    Abstract translation: 提供一种制造多层薄膜电化学装置的方法。 该方法包括：在室中提供第一目标材料; 在所述腔室中提供衬底; 发射指向第一目标材料的第一间歇激光束以产生第一等离子体，其中第一间歇激光束的每个脉冲具有约20fs至约500ps的脉冲持续时间; 将第一等离子体沉积在衬底上以形成第一薄膜; 在腔室中提供第二靶材料; 发射指向所述第二目标材料的第二间歇激光束以产生第二等离子体，其中所述第二间歇激光束的每个脉冲具有约20fs至约500ps的脉冲持续时间; 以及将第二等离子体沉积在第一薄膜上或上方以形成第二薄膜。

    P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates
    8.
    发明申请
    P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates 审中-公开
    P型半导体氧化锌薄膜及其制备方法及使用透明基板的脉冲激光沉积方法

    公开(公告)号：US20100000466A1

    公开(公告)日：2010-01-07

    申请号：US12558038

    申请日：2009-09-11

    Applicant: Bing LIU ,  Zhendong Hu ,  Yong Che ,  Yuzuru Uehara

    Inventor： Bing LIU ,  Zhendong Hu ,  Yong Che ,  Yuzuru Uehara

    IPC: H01L21/465

    CPC classification number: C23C14/22 ,  C23C14/083 ,  C23C14/28

    Abstract: A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.

    Abstract translation: 公开了一种p型半导体氧化锌（ZnO）膜及其制备方法。 该膜与磷（P）和锂（Li）共掺杂。 描述脉冲激光沉积方案用于生长膜。 进一步描述的是使用透明衬底的脉冲激光沉积过程，其包括脉冲激光源，在脉冲激光的波长处是透明的衬底和多目标系统。 脉冲激光器的光路布置成使得脉冲激光从衬底的背面入射，穿过衬底，然后聚焦在靶上。 通过将基板朝向目标平移，这种几何布置可以在羽流的角宽度扩大之前利用消融羽流的根部沉积小特征，其可以沿着目标表面法线存在于一维过渡阶段中 三维绝热膨胀。 这可以提供小的沉积特征尺寸，其尺寸可以与激光焦点类似，并且提供用于直接沉积图案化材料的新颖方法。

    METHOD FOR FABRICATING THIN FILMS
    9.
    发明申请
    METHOD FOR FABRICATING THIN FILMS 审中-公开
    薄膜制作方法

    公开(公告)号：US20090246413A1

    公开(公告)日：2009-10-01

    申请号：US12254076

    申请日：2008-10-20

    Applicant: Makoto Murakami ,  Zhendong Hu ,  Yong Che ,  Bing Liu

    Inventor： Makoto Murakami ,  Zhendong Hu ,  Yong Che ,  Bing Liu

    IPC: C23C14/30 ,  C23C16/54

    CPC classification number: C23C14/28 ,  C23C14/08 ,  C23C14/564 ,  H01S3/0057 ,  H01S3/0085 ,  H01S3/2308

    Abstract: A method of ultrashort pulsed laser deposition (PLD) capable of continuously tuning formed-film morphology from that of a nanoparticle aggregate to a smooth thin film completely free of particles and droplets. The materials that can be synthesized using various embodiments of the invention include, but are not limited to, metals, alloys, metal oxides, and semiconductors. A ‘burst’ mode of ultrashort pulsed laser ablation and deposition is provided, where each ‘burst’ contains a train of laser pulses. Tuning of the film morphology is achieved by controlling the burst-mode parameters such as the number of pulses and the time-spacing between the pulses within each burst, the burst repetition rate, and the laser fluence. The system includes an ultrashort pulsed laser, an optical setup for delivering the laser beam such that the beam is focused onto the target surface with an appropriate average energy density (fluence), and a vacuum chamber in which the target and the substrate are installed and background gases and their pressures are appropriately adjusted.

    Abstract translation: 一种超短脉冲激光沉积（PLD）的方法，其能够将形成膜的形态从纳米颗粒聚集体的形态连续调节到完全没有颗粒和液滴的光滑薄膜。 可以使用本发明的各种实施方案合成的材料包括但不限于金属，合金，金属氧化物和半导体。 提供了超短脉冲激光烧蚀和沉积的“突发”模式，其中每个“脉冲串”包含一系列激光脉冲。 通过控制脉冲串模式参数，例如脉冲数和每个脉冲之间的脉冲之间的时间间隔，脉冲串重复频率和激光能量密度来实现电影形态的调整。 该系统包括超短脉冲激光器，用于传送激光束的光学装置，使得光束以适当的平均能量密度（能量密度）聚焦到目标表面上;以及真空室，其中安装有靶和基底; 背景气体及其压力得到适当调整。

    METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS
    10.
    发明申请
    METHOD OF PRODUCING COMPOUND NANORODS AND THIN FILMS 有权
    生产化合物和薄膜的方法

    公开(公告)号：US20080292808A1

    公开(公告)日：2008-11-27

    申请号：US11754031

    申请日：2007-05-25

    Applicant: Bing Liu ,  Zhendong Hu ,  Yong Che

    Inventor： Bing Liu ,  Zhendong Hu ,  Yong Che

    IPC: B05D3/12

    CPC classification number: C23C14/086 ,  C23C14/28 ,  C30B23/00 ,  C30B29/16 ,  C30B29/60 ,  Y10T428/25

    Abstract: A method of producing compound nanorods and thin films under a controlled growth mode is described. The method involves ablating compound targets using an ultrafast pulsed laser and depositing the ablated materials onto a substrate. When producing compound nanorods, external catalysts such as pre-deposited metal nanoparticles are not involved. Instead, at the beginning of deposition, simply by varying the fluence at the focal spot on the target, a self-formed seed layer can be introduced for nanorods growth. This provides a simple method of producing high purity nanorods and controlling the growth mode. Three growth modes are covered by the present invention, including nanorod growth, thin film growth, and nano-porous film growth.

    Abstract translation: 描述了在受控生长模式下制备复合纳米棒和薄膜的方法。 该方法包括使用超快速脉冲激光烧蚀化合物靶，并将消融材料沉积在基底上。 当制备复合纳米棒时，不涉及外部催化剂如预沉积的金属纳米颗粒。 相反，在沉积开始时，简单地通过改变目标上焦点处的注量，可以引入自形晶种层用于纳米棒生长。 这提供了生产高纯度纳米棒并控制生长模式的简单方法。 本发明涵盖三种生长方式，包括纳米棒生长，薄膜生长和纳米多孔膜生长。

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