公开(公告)号：US20160316850A1

公开(公告)日：2016-11-03

申请号：US15099728

申请日：2016-04-15

申请人： Yong Soo Kim

发明人： Yong Soo Kim

IPC分类号： A43B3/24 ,  A43B3/12 ,  A43B3/10

CPC分类号： A43B3/24 ,  A43B3/103 ,  A43B3/108 ,  A43B3/12 ,  A43B3/128 ,  A43B13/20 ,  A43B13/203 ,  F16K1/14 ,  F16K5/0407 ,  F16K15/04 ,  F16K15/183

摘要： A shoe in form of a slipper or sandal, includes a body 100 adapted to have a first fluid casing 12 and a second fluid casing 14, each having an elastic property, embedded in the front and rear portions of the body, respectively, and an instep strap 120 supported to the body in such a way as to be rotated in a specific section. A rotating shaft 16 is rotated in conjunction with the instep strap, and it includes a first connecting portion connected to the first fluid casing and a second connecting portion connected to the second fluid casing and an internal passage having respective check ball seating portions formed on the inside of the first and the second connecting portions, and with check ball received in the internal passage. When the rotating shaft is inclined by rotation of the rotating shaft, the check ball closely adheres to any one of the check ball seating portions by gravity or buoyancy and regulates a fluid flow to any one of the first and the second connecting portions.

摘要翻译： 拖鞋或凉鞋形式的鞋包括主体100，其适于分别嵌入在身体的前部和后部中的具有弹性的第一流体壳体12和第二流体壳体14， 脚背带120以在特定部分中旋转的方式支撑到身体。 旋转轴16与脚背带一起旋转，并且其包括连接到第一流体壳体的第一连接部分和连接到第二流体壳体的第二连接部分和具有形成在第二流体壳体上的相应止回球座部分的内部通道 在第一和第二连接部分内部，并且止回球接收在内部通道中。 当旋转轴通过旋转轴的旋转而倾斜时，止回球通过重力或浮力紧密地粘附到任何一个止回球座部，并且调节流体流到第一和第二连接部中的任何一个。

公开(公告)号：US09260764B2

公开(公告)日：2016-02-16

申请号：US13824082

申请日：2011-12-22

申请人： Jae-Song Kim ,  Jae-Kwan Kim ,  Su-Yong Sin ,  Yong-Soo Kim

发明人： Jae-Song Kim ,  Jae-Kwan Kim ,  Su-Yong Sin ,  Yong-Soo Kim

IPC分类号： C21D8/12 ,  C22C38/02 ,  C22C38/04 ,  C22C38/40 ,  C21D8/02 ,  C22C38/00 ,  C22C38/06 ,  C22C38/14 ,  H01F1/01

CPC分类号： C21D8/0273 ,  C21D8/1244 ,  C21D8/1272 ,  C21D2201/05 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/14 ,  H01F1/01

摘要： Provided is a low iron loss high strength non-oriented electromagnetic steel sheet and a method for manufacturing the same. The method comprises hot-rolling a slab comprising 0.005 weight % or less of C, 4.0 weight % or less of Si, 0.1 weight % or less of P, 0.03 weight % or less of S, 0.1 to 2.0 weight % of Mn, 0.3 to 2.0 weight % of Al, 0.003 weight % or less of N, 0.005 weight % or less of Ti, the remainder being Fe and unavoidable impurities, cold-rolling the slab, and finally annealing the slab such that the fractional area of the non-recrystallization tissue at the cross sectional surface of the steel sheet is 50% or lower (not including 0%).

摘要翻译： 本发明提供一种低铁损高强度无取向电磁钢板及其制造方法。 该方法包括将C：0.005重量％以下，Si 4.0重量％以下，P：0.1重量％以下，S：0.03重量％以下，S：0.1〜2.0重量％，Mn：0.3 至2.0重量％的Al，0.003重量％以下的N，0.005重量％以下的Ti，余量为Fe和不可避免的杂质，冷轧板坯，最后对板坯进行退火， 在钢板的横截面上的再结晶组织为50％以下（不包括0％）。

公开(公告)号：US20150273541A1

公开(公告)日：2015-10-01

申请号：US14666652

申请日：2015-03-24

申请人： Yong Soo Kim

发明人： Yong Soo Kim

IPC分类号： B08B9/055

CPC分类号： B08B9/055 ,  B08B9/0557 ,  E03C1/308

摘要： A device for clearing pipe blockage includes: pumping means (A) for compressing air by pumping and having an outlet (18) for discharging compressed air out; and an inflatable balloon mounted at the outlet and expanding by air discharged through the outlet. The outlet is a one-way valve, and a cylindrical guide member (24) is formed to surround the outside of the inflatable balloon, guides the inflatable balloon to move forward inside a pipe when a front end part of the guide member is inserted into the pipe, and is made of flexible material. A presser which cleans the inner surface of the pipe while moving in a state where it gets in contact with the inner surface of the pipe is mounted at a front end of the inflatable balloon, and the blocked pipe is cleared by shock pressure by movement of the pumping unit and a change in pressure by expansion of the inflatable balloon by the compressed air.

摘要翻译： 用于清除管道堵塞的装置包括：泵送装置（A），用于通过泵送压缩空气并具有用于排出压缩空气的出口（18）; 以及安装在出口处的膨胀气囊，并且通过出口排出的空气膨胀。 出口是单向阀，并且圆柱形引导构件（24）形成为围绕可膨胀气囊的外部，当引导构件的前端部分插入时，引导可膨胀气囊在管道内向前移动 管子，由柔性材料制成。 在与管子的内表面接触的状态下移动的同时清洗管的内表面的按压件安装在可膨胀气囊的前端，并且阻塞管通过冲击压力被移动 泵送单元和通过压缩空气膨胀可膨胀气球的压力变化。

公开(公告)号：US08963205B2

公开(公告)日：2015-02-24

申请号：US12165164

申请日：2008-06-30

申请人： Yong-Soo Kim ,  Jun-Ki Kim ,  Se-Aug Jang

发明人： Yong-Soo Kim ,  Jun-Ki Kim ,  Se-Aug Jang

IPC分类号： H01L29/66 ,  H01L29/10 ,  H01L21/8238 ,  H01L29/78

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L29/66651 ,  H01L29/7843

摘要： A transistor of a semiconductor device includes a substrate, a gate over the substrate, a source/drain region formed in the substrate to have a channel region therebetween, and an epitaxial layer formed below the channel region to have a different lattice constant from the substrate. The epitaxial layer having a different lattice constant with a substrate material is formed below the channel region to apply a stress to the channel region. Thus, the mobility of carriers of the transistor increases.

摘要翻译： 半导体器件的晶体管包括衬底，衬底上的栅极，形成在衬底中以在其间具有沟道区的源极/漏极区和形成在沟道区下方的与衬底不同的晶格常数的外延层 。 在沟道区的下方形成具有与衬底材料不同的晶格常数的外延层，以对沟道区施加应力。 因此，晶体管的载流子的迁移率增加。

公开(公告)号：US20140223080A1

公开(公告)日：2014-08-07

申请号：US14009213

申请日：2012-03-22

申请人： Myoung Kyu Seo ,  Yong Soo Kim

发明人： Myoung Kyu Seo ,  Yong Soo Kim

IPC分类号： G06F3/06

CPC分类号： G06F3/0688 ,  G06F3/0619 ,  G06F3/0629 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/32

摘要： Provided are a non-volatile memory device, an electronic control system, and a method of operating the non-volatile memory device. A non-volatile memory device according to an embodiment of the present invention includes a first NAND cell array including a first group of pages, and a second NAND cell array including a second group of pages. A plurality of X-decoders are at least one-to-one connected to the first and second NAND cell arrays. A control logic controls the plurality of X-decoders to simultaneously sense data of a first page corresponding to a start address from among the first group of pages, and data of a second page subsequent to the first page from among the second group of pages.

摘要翻译： 提供了非易失性存储器件，电子控制系统和操作非易失性存储器件的方法。 根据本发明的实施例的非易失性存储器件包括包括第一组页面的第一NAND单元阵列和包括第二组页面的第二NAND单元阵列。 多个X解码器至少一对一连接到第一和第二NAND单元阵列。 控制逻辑控制多个X解码器，以从第一组页面中同时感测来自第一组页面的对应于起始地址的第一页面的数据，以及第二页面之后的第一页面之后的第二页面的数据。

公开(公告)号：US08295608B2

公开(公告)日：2012-10-23

申请号：US12745293

申请日：2008-11-25

申请人： Yong Soo Kim ,  Jong Il Park ,  Oh Dae Kim ,  Yun Hyeon Kim ,  Myoung Koo Kang ,  Jin Su Bae

发明人： Yong Soo Kim ,  Jong Il Park ,  Oh Dae Kim ,  Yun Hyeon Kim ,  Myoung Koo Kang ,  Jin Su Bae

IPC分类号： G06K9/48

CPC分类号： G01B11/028 ,  G06T7/0004 ,  G06T2207/30136

摘要： There are provided a device and method for detecting joint parts of a steel strip in an endless hot rolling process. The device for detecting joint parts of a steel strip in an endless hot rolling process includes an image signal collection block receiving image signals, each having information on gray level pixels of a steel strip, from a charge coupled device (CCD) camera; an edge line detection block receiving the image signals from the image signal collection block to detect an edge line of the steel strip; a profile calculation block receiving information on the detection of the edge line from the edge line detection block to calculate the sum of gray levels up to an edge line of the steel strip in a traverse direction of the steel strip when the edge line is detected by the edge line detection block; a joint part judgement block receiving information on the sum of the gray levels, which shows a current profile value, from the profile calculation block to judge the edge line as a joint part when a ratio of a mean value of the current profile and a mean value of the previous profile is less than a predetermined value; and an output block receiving information on the judgement of the edge line as the joint part from the joint part judgement block to output a joint part-detecting signal when the edge line is judged to be a joint part.

摘要翻译： 提供了一种用于在循环热轧过程中检测钢带的接合部件的装置和方法。 在循环热轧工艺中检测钢带的接合部件的装置包括图像信号采集块，其从电荷耦合器件（CCD）照相机接收各自具有关于钢带的灰度像素的信息的图像信号; 边缘线检测块，从图像信号采集块接收图像信号，以检测钢带的边缘线; 轮廓计算块从边缘线检测块接收关于边缘线的检测的信息，以计算当钢带的横向方向上的钢带的边缘线之间的灰度级之和，当边缘线被检测到边缘线时 边缘线检测块; 联合部分判断块从轮廓计算块接收关于表示当前轮廓值的灰度之和的信息，以当当前轮廓的平均值和平均值之间的比值作为关节部分判断边缘线 先前轮廓的值小于预定值; 以及输出块，当从所述关节部分判断块接收关于所述边缘线作为所述关节部分的判断的信息时，当所述边缘线被判断为关节部分时输出关节部分检测信号。

公开(公告)号：US20120258946A1

公开(公告)日：2012-10-11

申请号：US13292563

申请日：2011-11-09

申请人： Robert FRANK ,  Gregor Bahrenberg ,  Thomas Christoph ,  Klaus Schiene ,  Jean De Vry ,  Nils Damann ,  Sven Frormann ,  Bernhard Lesch ,  Derek John Saunders ,  Jeewoo Lee ,  Yong-Soo Kim ,  Myeong-Seop Kim ,  Hannelore Stockhausen

发明人： Robert FRANK ,  Gregor Bahrenberg ,  Thomas Christoph ,  Klaus Schiene ,  Jean De Vry ,  Nils Damann ,  Sven Frormann ,  Bernhard Lesch ,  Derek John Saunders ,  Jeewoo Lee ,  Yong-Soo Kim ,  Myeong-Seop Kim ,  Hannelore Stockhausen

IPC分类号： A61K31/415 ,  C07D405/12 ,  A61K31/4155 ,  C07D417/12 ,  A61K31/427 ,  C07D403/12 ,  A61P25/00 ,  A61P25/28 ,  A61P25/16 ,  A61P25/14 ,  A61P11/00 ,  A61P11/06 ,  A61P11/08 ,  A61P29/00 ,  A61P3/04 ,  A61P25/36 ,  C07D231/12

CPC分类号： C07D417/12 ,  A61K31/415 ,  A61K31/4155 ,  A61K31/427 ,  C07D231/12 ,  C07D249/08 ,  C07D403/12 ,  C07D405/12

摘要： Substituted phenylureas and phenylamides, processes for their preparation, pharmaceutical compositions containing these compounds, and the use of these compounds for preparing pharmaceutical compositions.

摘要翻译： 取代的苯基脲和苯基酰胺，其制备方法，含有这些化合物的药物组合物，以及这些化合物用于制备药物组合物的用途。

公开(公告)号：US20110250746A1

公开(公告)日：2011-10-13

申请号：US13166273

申请日：2011-06-22

申请人： Heung-Jae CHO ,  Moon-Sig JOO ,  Yong-Soo KIM ,  Won-Joon CHOI

发明人： Heung-Jae CHO ,  Moon-Sig JOO ,  Yong-Soo KIM ,  Won-Joon CHOI

IPC分类号： H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/28273

摘要： A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

公开(公告)号：US20110186920A1

公开(公告)日：2011-08-04

申请号：US13043385

申请日：2011-03-08

申请人： Kwan-Yong LIM ,  Hong-Seon Yang ,  Heung-Jae Cho ,  Tae-Kyung Kim ,  Yong-Soo Kim ,  Min-Gyu Sung

发明人： Kwan-Yong LIM ,  Hong-Seon Yang ,  Heung-Jae Cho ,  Tae-Kyung Kim ,  Yong-Soo Kim ,  Min-Gyu Sung

IPC分类号： H01L29/788

CPC分类号： H01L29/4925 ,  H01L21/28061 ,  H01L29/42324 ,  H01L29/4941 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.

摘要翻译： 半导体器件包括第一导电层，第一导电层上的第一中间结构，第一中间结构之上的第二中间结构以及第二中间结构上的第二导电层。 第一中间结构包括金属硅化物层和含氮金属层。 第二中间结构至少包括含氮金属硅化物层。

公开(公告)号：US07968912B2

公开(公告)日：2011-06-28

申请号：US12749176

申请日：2010-03-29

申请人： Yong-Soo Kim ,  Hong-Seon Yang ,  Seung-Ho Pyi ,  Tae-Hang Ahn

发明人： Yong-Soo Kim ,  Hong-Seon Yang ,  Seung-Ho Pyi ,  Tae-Hang Ahn

IPC分类号： H01L29/78 ,  H01L27/12

CPC分类号： H01L29/0847 ,  H01L21/18 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor device includes a substrate, a gate formed over the substrate, a gate spacer provided against first and second sidewalls of the gate, and a source/drain region formed in the substrate proximate to the gate spacer. The source/drain region includes first and second epitaxial layers including Ge, wherein the second epitaxial layer which is formed over an interfacial layer between the first epitaxial layer and the substrate has a higher germanium concentration than that of the first epitaxial layer.

摘要翻译： 半导体器件包括衬底，形成在衬底上的栅极，设置在栅极的第一和第二侧壁上的栅极间隔，以及形成在靠近栅极间隔物的衬底中的源/漏区。 源极/漏极区包括包括Ge的第一和第二外延层，其中在第一外延层和衬底之间的界面层上形成的第二外延层具有比第一外延层更高的锗浓度。