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    SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTORS
    2.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTORS 有权
    包括场效应晶体管的半导体器件

    公开(公告)号：US20160336450A1

    公开(公告)日：2016-11-17

    申请号：US15093892

    申请日：2016-04-08

    申请人： Yong-Suk TAK ,  Jongryeol YOO ,  Hyun Jung LEE ,  Miseon PARK ,  Bonyoung KOO ,  Sunjung KIM

    发明人： Yong-Suk TAK ,  Jongryeol YOO ,  Hyun Jung LEE ,  Miseon PARK ,  Bonyoung KOO ,  Sunjung KIM

    IPC分类号： H01L29/78 ,  H01L29/08

    CPC分类号： H01L29/7851 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7849

    摘要： A semiconductor device includes a fin structure on a substrate and extending in a first direction, a gate electrode crossing over the fin structure, source/drain regions on the fin structure at opposite sides of the gate electrode, and a barrier layer between the fin structure and each of the source/drain regions. The fin structure includes a material having a lattice constant different from that of the substrate, the fin structure, the source/drain regions, and the barrier layer include germanium, and a germanium concentration in the barrier layer is greater than that in the fin structure and less than a maximum germanium concentration in each of the source/drain regions.

    摘要翻译： 半导体器件包括在衬底上并沿第一方向延伸的翅片结构，在翅片结构上交叉的栅电极，在栅电极的相对侧的翅片结构上的源/漏区和鳍结构之间的阻挡层 和源极/漏极区域中的每一个。 翅片结构包括具有与衬底的晶格常数不同的晶格常数的材料，鳍结构，源极/漏极区和阻挡层包括锗，并且阻挡层中的锗浓度大于鳍结构中的锗浓度 并且在每个源极/漏极区域中小于最大锗浓度。

    Semiconductor devices having a contact plug and fabrication methods thereof
    4.
    发明授权
    Semiconductor devices having a contact plug and fabrication methods thereof 有权
    具有接触塞的半导体器件及其制造方法

    公开(公告)号：US07781819B2

    公开(公告)日：2010-08-24

    申请号：US12270286

    申请日：2008-11-13

    申请人： Wan-don Kim ,  Jin-yong Kim ,  Yong-suk Tak ,  Jung-hee Chung ,  Ki-chul Kim ,  Oh-seong Kwon

    发明人： Wan-don Kim ,  Jin-yong Kim ,  Yong-suk Tak ,  Jung-hee Chung ,  Ki-chul Kim ,  Oh-seong Kwon

    IPC分类号： H01L29/92

    CPC分类号： H01L28/91 ,  H01L27/10855 ,  H01L28/60

    摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes an insulating layer that is formed on a supporting layer and has a contact hole. A first contact plug is formed on an inner wall and bottom of the contact hole. A second contact plug buries the contact hole and is formed on the first contact plug. A conductive layer is connected to the first contact plug and the second contact plug. The bottom thickness of the first contact plug formed on the bottom of the contact hole is thicker than the inner wall thickness of the first contact plug formed on the inner wall of the contact hole.

    摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括形成在支撑层上并具有接触孔的绝缘层。 第一接触塞形成在接触孔的内壁和底部上。 第二接触插塞将接触孔埋入并形成在第一接触插塞上。 导电层连接到第一接触插塞和第二接触插塞。 形成在接触孔底部的第一接触塞的底部厚度比形成在接触孔的内壁上的第一接触塞的内壁厚度大。

    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING SILICON CARBON
    5.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING SILICON CARBON 有权
    半导体器件，其中包括有机硅碳源

    公开(公告)号：US20160315160A1

    公开(公告)日：2016-10-27

    申请号：US15002379

    申请日：2016-01-20

    申请人： Hyunjung LEE ,  Keumseok PARK ,  Jinyeong JOE ,  Yong-Suk TAK

    发明人： Hyunjung LEE ,  Keumseok PARK ,  Jinyeong JOE ,  Yong-Suk TAK

    IPC分类号： H01L29/417 ,  H01L23/535 ,  H01L29/78

    CPC分类号： H01L29/41791 ,  H01L29/785

    摘要： Provided is a semiconductor device. In some examples, the semiconductor device includes an fin active region protruding from a substrate, gate patterns disposed on the fin active region, a source/drain region disposed on the fin active region between the gate patterns, and contact patterns disposed on the source/drain region. The source/drain region may have a protruding middle section, which may form a wave-shaped upper surface of the source/drain region.

    摘要翻译： 提供一种半导体器件。 在一些示例中，半导体器件包括从基板突出的鳍状有源区域，设置在鳍状有源区域上的栅极图案，设置在栅极图案之间的鳍状有源区域上的源极/漏极区域和设置在源极/ 漏区。 源极/漏极区域可以具有突出的中间部分，其可以形成源极/漏极区域的波状上表面。

    SEMICONDUCTOR DEVICE HAVING FIN ACTIVE REGIONS AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE HAVING FIN ACTIVE REGIONS AND METHOD OF FABRICATING THE SAME 有权
    具有精细活性区域的半导体器件及其制造方法

    公开(公告)号：US20160315081A1

    公开(公告)日：2016-10-27

    申请号：US15013969

    申请日：2016-02-02

    申请人： Miseon PARK ,  Jongryeol YOO ,  Hyunjung LEE ,  Yong-Suk TAK ,  Bonyoung KOO ,  Sunjung KIM

    发明人： Miseon PARK ,  Jongryeol YOO ,  Hyunjung LEE ,  Yong-Suk TAK ,  Bonyoung KOO ,  Sunjung KIM

    IPC分类号： H01L27/088 ,  H01L29/417 ,  H01L29/08 ,  H01L29/06 ,  H01L29/161

    CPC分类号： H01L27/0886 ,  H01L21/823425 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/41791

    摘要： A semiconductor device may include fin active regions extending parallel to each other on a substrate, an isolation region between the fin active regions, gate patterns intersecting the fin active regions and extending parallel to each other, source/drain areas on the fin active regions between the gate patterns and fin active region spacers contacting side surfaces of the fin active regions and formed over a surface of the isolation region between the fin active regions. Uppermost levels of the fin active region spacers may be higher than interfaces between the fin active regions and the source/drain areas. The upper surface of the isolation region may be lower than bottom surfaces of the source/drain areas.

    摘要翻译： 半导体器件可以包括在衬底上彼此平行延伸的翅片有源区域，翅片有源区域之间的隔离区域，与翅片有源区域相交并且彼此平行延伸的栅极图案，翅片有源区域之间的源极/漏极区域在 所述栅极图案和鳍状有源区间隔物接触所述翅片有源区域的侧表面并形成在所述鳍片活动区域之间的所述隔离区域的表面上。 翅片有源区间隔物的最上层可以高于翅片有源区和源极/漏极区之间的界面。 隔离区域的上表面可以低于源/漏区域的底表面。

    CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR
    10.
    发明申请
    CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR 审中-公开
    包括电容器的电容器和半导体器件

    公开(公告)号：US20120119327A1

    公开(公告)日：2012-05-17

    申请号：US13238032

    申请日：2011-09-21

    申请人： Oh-Seong Kwon ,  Kyu-Ho Cho ,  Wan-Don Kim ,  Beom-Seok Kim ,  Yong-Suk Tak

    发明人： Oh-Seong Kwon ,  Kyu-Ho Cho ,  Wan-Don Kim ,  Beom-Seok Kim ,  Yong-Suk Tak

    IPC分类号： H01L29/92

    CPC分类号： H01L28/40 ,  H01L27/10852 ,  H01L27/10876 ,  H01L28/65

    摘要： A capacitor in a semiconductor memory device comprises a lower electrode on a substrate that is formed of a conductive metal oxide having a rutile crystalline structure, a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and includes impurities for reducing a leakage current, and an upper electrode on the titanium oxide dielectric layer. A method of forming a capacitor in a semiconductor device comprise steps of forming a lower electrode on a substrate that includes a conductive metal oxide having a rutile crystalline structure, forming a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and impurities for reducing a leakage current, and forming an upper electrode on the titanium oxide dielectric layer.

    摘要翻译： 半导体存储器件中的电容器包括由具有金红石晶体结构的导电金属氧化物形成的衬底上的下电极，下电极上的具有金红石晶体结构的氧化钛电介质层，并且包括用于减少漏电的杂质 电流和氧化钛电介质层上的上电极。 在半导体器件中形成电容器的方法包括以下步骤：在包括具有金红石晶体结构的导电金属氧化物的衬底上形成下电极，在具有金红石晶体结构的下电极上形成氧化钛电介质层和杂质 用于减少漏电流，以及在氧化钛电介质层上形成上电极。