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1.发明授权Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same 有权铽掺杂，富硅氧化物电致发光器件及其制造方法公开(公告)号：US07811837B2
公开(公告)日：2010-10-12
申请号：US11582275
申请日：2006-10-16
Applicant: Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
Inventor： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
IPC: H01L29/00
CPC classification number: H01L27/15 , H01L33/0004 , H01L33/343
Abstract: A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.
Abstract translation: 一种制造电致发光器件的方法包括：在制备的衬底上，在作为发光层的栅极氧化物层上沉积稀土掺杂的富硅层; 并对该结构进行退火和氧化以修复对稀土掺杂的富硅层造成的任何损伤; 并将电致发光器件并入CMOS IC。 根据本发明的方法制造的电致发光器件包括：衬底，形成在栅极氧化物层上的用于发射预定波长的光的稀土掺杂富硅层; 在稀土掺杂的富硅层上形成的顶部电极; 并在其附近制造相关的CMOS IC结构。
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公开(公告)号：US20100040959A1
公开(公告)日：2010-02-18
申请号：US12247130
申请日：2008-10-07
Applicant: Bruce D. Ulrich , Yoshi Ono , Wei Gao
Inventor： Bruce D. Ulrich , Yoshi Ono , Wei Gao
IPC: G03F1/00
CPC classification number: G03F1/50 , G03F7/0005
Abstract: A method is provided for forming an error diffusion-derived sub-resolutional grayscale reticle. The method forms at least one partial-light transmissive layer overlying a transparent substrate. At least one unit cell in formed in the transmissive layer. The unit cell is formed by selecting the number of reduced-transmission pixels in the unit cell, and forming a sub-pattern of reduced-transmission pixels in the unit cell. The unit cell is sub-resolutional at a first wavelength.
Abstract translation: 提供了一种用于形成误差扩散衍生的子分辨灰度掩模版的方法。 该方法形成了覆盖透明衬底的至少一个部分透光层。 在透射层中形成至少一个单电池。 通过选择单位单元中的缩小透射像素的数量，并且在单位单元中形成减少透射像素的子图案来形成单位单元。 单元在第一波长处是次分辨的。
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公开(公告)号：US20100040958A1
公开(公告)日：2010-02-18
申请号：US12193568
申请日：2008-08-18
Applicant: Bruce D. Ulrich , Yoshi Ono , Wei Gao
Inventor： Bruce D. Ulrich , Yoshi Ono , Wei Gao
IPC: G03F1/00
CPC classification number: G03F1/50 , G03F7/0005
Abstract: A sub-resolutional grayscale reticle and associated fabrication method have been presented. The method provides a transparent substrate, and forms a plurality of coincident partial-light transmissive layers overlying the transparent substrate. A pattern is formed, sub-resolutional at a first wavelength, in at least one of the transmissive layers. If there are n transmissive layers, the reticle transmits at least (n+1) intensities of light. In one aspect, each of the plurality of transmissive layers has the same extinction coefficient and the same thickness. In other aspects, the transmissive layers may have different thickness. Then, even if the extinction coefficients are the same, the attenuation of light through each layer is different. The transmission characteristics of the reticle can be further varied if the transmissive layers have different extinction coefficients. Likewise, the transmission characteristics through the sub-resolutional patterns can be varied.
Abstract translation: 已经提出了一种亚分辨灰度标线和相关的制造方法。 该方法提供透明基板，并且形成覆盖透明基板的多个重合部分透光层。 在至少一个透射层中形成在第一波长处副溶液的图案。 如果存在n个透射层，则光罩传播至少（n + 1）个光强。 在一个方面，多个透射层中的每一个具有相同的消光系数和相同的厚度。 在其它方面，透射层可以具有不同的厚度。 那么即使消光系数相同，每层的光的衰减也是不同的。 如果透射层具有不同的消光系数，则可以进一步改变掩模版的透射特性。 同样，可以改变通过子解决图案的传输特性。
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公开(公告)号：US07462499B2
公开(公告)日：2008-12-09
申请号：US11262439
申请日：2005-10-28
Applicant: John F. Conley, Jr. , Yoshi Ono , Lisa H. Stecker , Sheng Teng Hsu , Josh M. Green , Lifeng Dong , Jun Jiao
Inventor： John F. Conley, Jr. , Yoshi Ono , Lisa H. Stecker , Sheng Teng Hsu , Josh M. Green , Lifeng Dong , Jun Jiao
IPC: H01L21/00
CPC classification number: H01J9/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/168 , C01B2202/34 , C01B2202/36 , H01J1/304 , H01J2201/30469 , H01L21/0237 , H01L21/02381 , H01L21/02444 , H01L21/02472 , H01L21/02483 , H01L21/02513 , H01L21/02554 , H01L21/02601 , Y10S977/754
Abstract: A ZnO asperity-covered carbon nanotube (CNT) device has been provided, along with a corresponding fabrication method. The method comprises: forming a substrate; growing CNTs from the substrate; conformally coating the CNTs with ZnO; annealing the ZnO-coated CNTs; and, forming ZnO asperities on the surface of the CNTs in response to the annealing. In one aspect, the ZnO asperities have a density in the range of about 100 to 1000 ZnO asperities per CNT. The density is dependent upon the deposited ZnO film thickness and annealing parameters. The CNTs are conformally coating with ZnO using a sputtering, chemical vapor deposition (CVD), spin-on, or atomic layer deposition (ALD). For example, an ALD process can be to deposit a layer of ZnO over the CNTs having a thickness in the range of 1.2 to 200 nanometers (nm).
Abstract translation: 已经提供了ZnO微粒覆盖碳纳米管（CNT）器件，以及相应的制造方法。 该方法包括：形成衬底; 从底物生长CNT; 用ZnO共形涂覆CNT; 退火ZnO涂层的CNT; 并且响应于退火在CNT的表面上形成ZnO粗糙度。 在一个方面，ZnO粗糙度的密度在每个CNT约100-1000nm的ZnO粗糙度的范围内。 密度取决于沉积的ZnO膜厚度和退火参数。 使用溅射，化学气相沉积（CVD），旋涂或原子层沉积（ALD），使用ZnO共形涂覆CNT。 例如，ALD工艺可以在厚度在1.2至200纳米（nm）范围内的CNT上沉积ZnO层。
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5.发明申请Metal organic deposition precursor solution synthesis and terbium-doped SiO2 thin film deposition 失效金属有机沉积前驱体溶液合成和铽掺杂SiO2薄膜沉积
公开(公告)号：US20080026590A1
公开(公告)日：2008-01-31
申请号：US11494141
申请日：2006-07-26
Applicant: Wei-Wei Zhuang , Yoshi Ono , Tingkai Li
Inventor： Wei-Wei Zhuang , Yoshi Ono , Tingkai Li
IPC: H01L21/31
CPC classification number: C23C18/1295 , C23C18/1208 , C23C18/1279 , C23C18/1283
Abstract: A method of making a doped silicon oxide thin film using a doped silicon oxide precursor solution includes mixing a silicon source in an organic acid and adding 2-methoxyethyl ether to the silicon source and organic acid to from a preliminary precursor solution. The resultant solution is heated, stirred and filtered. A doping impurity is dissolved in 2-methoxyethanol to from a doped source solution, and the resultant solution mixed with the previously described resultant solution to from a doped silicon oxide precursor solution. A doped silicon oxide thin film if formed on a wafer by spin coating. The thin film and the wafer are baked at progressively increasing temperatures and the thin film and the wafer are annealed.
Abstract translation: 使用掺杂的氧化硅前体溶液制造掺杂的氧化硅薄膜的方法包括将有机酸中的硅源混合并向硅源和有机酸中加入2-甲氧基乙醚至初始前体溶液。 将所得溶液加热，搅拌并过滤。 将掺杂杂质从掺杂的源溶液中溶解在2-甲氧基乙醇中，并将所得溶液与先前所述的溶液混合从掺杂的氧化硅前体溶液中。 如果通过旋涂在晶片上形成掺杂的氧化硅薄膜。 在逐渐升高的温度下烘烤薄膜和晶片，并对薄膜和晶片进行退火。
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公开(公告)号：US07297473B2
公开(公告)日：2007-11-20
申请号：US11270701
申请日：2005-11-08
Applicant: Yoshi Ono , Bruce D. Ulrich
Inventor： Yoshi Ono , Bruce D. Ulrich
IPC: G02B3/00
CPC classification number: G02B3/0018 , G02B3/0056
Abstract: A method of forming a microlens array includes preparing a substrate; fabricating a photosensitive array on the substrate; depositing a layer of lens material on the photosensitive array; depositing and patterning photoresist on the lens material, wherein patterning includes forming a photoresist region having a solid curved upper surface and a substantially rectangular base on the lens material layer; developing the photoresist; reflowing the photoresist; and processing the lens material for form a microlens array.
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公开(公告)号：US20060250072A1
公开(公告)日：2006-11-09
申请号：US11123603
申请日：2005-05-06
CPC classification number: H01L33/0004 , H01L33/26
Abstract: A method is provided for forming a ZnO Si N—I—N EL device. The method comprises: forming an n-doped Si layer; forming a Si oxide (SiO2) layer overlying the n-doped Si layer; forming an n-type ZnO layer overlying the SiO2 layer; and, forming an electrode overlying the ZnO layer. The electrode can be a transparent material such as indium tin oxide, zinc oxyfluoride, or a conductive plastic. The n-doped Si layer can be polycrystalline or single-crystal Si. In some aspects, the Si oxide layer has a thickness in the range of 1 to 20 nm. More preferably, the thickness is 2 to 5 nm. The ZnO layer thickness is in the range of 10 to 200 nm.
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8.发明申请Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition 失效使用选择性纳米线沉积制造纳米线CHEMFET传感器器件的方法
公开(公告)号：US20060240588A1
公开(公告)日：2006-10-26
申请号：US11115814
申请日：2005-04-26
Applicant: John Conley , Yoshi Ono , Lisa Stecker
Inventor： John Conley , Yoshi Ono , Lisa Stecker
IPC: H01L21/00
CPC classification number: G01N27/4146 , B82Y10/00 , B82Y15/00 , G11C2213/16 , H01L51/0048 , H01L51/0545
Abstract: A method of fabricating a nanowire CHEMFET sensor mechanism includes preparing a silicon substrate; depositing a polycrystalline ZnO seed layer on the silicon substrate; patterning and etching the polycrystalline ZnO seed layer; depositing an insulating layer over the polycrystalline ZnO seed layer and the silicon substrate; patterning and etching the insulating layer to form contact holes to a source region and a drain region; metallizing the contact holes to form contacts for the source region and the drain region; depositing a passivation dielectric layer over the insulating layer and the contacts; patterning the passivation layer and etching to expose the polycrystalline ZnO seed layer between the source region and the drain region; and growing ZnO nanostructures on the exposed ZnO seed layer to form a ZnO nanostructure CHEMFET sensor device.
Abstract translation: 制造纳米线CHEMFET传感器机构的方法包括制备硅衬底; 在硅衬底上沉积多晶ZnO种子层; 图案化和蚀刻多晶ZnO种子层; 在多晶ZnO种子层和硅衬底上沉积绝缘层; 图案化和蚀刻绝缘层以形成到源极区域和漏极区域的接触孔; 金属化接触孔以形成用于源极区域和漏极区域的触点; 在所述绝缘层和所述触点上沉积钝化介电层; 图案化钝化层并蚀刻以在源极区域和漏极区域之间暴露多晶ZnO晶种层; 并在曝光的ZnO种子层上生长ZnO纳米结构以形成ZnO纳米结构CHEMFET传感器装置。
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9.发明申请
公开(公告)号：US20060197436A1
公开(公告)日：2006-09-07
申请号：US11240970
申请日：2005-09-30
Applicant: John Conley , Yoshi Ono
Inventor： John Conley , Yoshi Ono
Abstract: A device and a fabrication method are provided for a ZnO nanotip electroluminescence (EL) device on a silicon (Si) substrate. The method includes: forming a Si substrate; forming a bottom contact overlying the Si substrate; forming a seed layer overlying the bottom contact; forming ZnO nanotips with tops, overlying the seed layer; forming an insulating film overlying the ZnO nanotips; etching the insulating film; exposing the ZnO nanotip tops; and, forming a transparent top electrode overlying the exposed ZnO nanotip tops. In one aspect, after forming the ZnO nanotips, an ALD process can be used to coat the ZnO nanotips with a material such as Al2O3 or HfO2. The seed layer can be ZnO or ZnO:Al, formed using a deposition process such as sputtering, chemical vapor deposition (CVD), spin-on, or atomic layer deposition (ALD).
Abstract translation: 提供了一种在硅（Si）衬底上的ZnO纳米管电致发光（EL）器件的器件和制造方法。 该方法包括：形成Si衬底; 形成覆盖Si衬底的底部接触; 形成覆盖底部接触的种子层; 用顶部形成ZnO纳米片，覆盖种子层; 形成覆盖ZnO纳米尖端的绝缘膜; 蚀刻绝缘膜; 暴露ZnO纳米尖顶; 并且形成覆盖曝光的ZnO纳米尖顶部的透明顶部电极。 在一个方面，在形成ZnO纳米片之后，可以使用ALD工艺来用诸如Al 2 O 3 3或HfO 2的材料涂覆ZnO纳米片 。 种子层可以是使用沉积工艺如溅射，化学气相沉积（CVD），旋涂或原子层沉积（ALD）形成的ZnO或ZnO：Al。
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公开(公告)号：US07087526B1
公开(公告)日：2006-08-08
申请号：US11261020
申请日：2005-10-27
Applicant: Wei-Wei Zhuang , Wei Gao , Yoshi Ono
Inventor： Wei-Wei Zhuang , Wei Gao , Yoshi Ono
IPC: H01L23/02
CPC classification number: C23C26/00
Abstract: A method of CaO-doped SrCu2O2 spin-on precursor synthesis and low temperature p-type thin film deposition, includes preparing a wafer to receive a spin-coating thereon; selecting metalorganic compounds to form a SrCu2O2 precursor, mixing and refluxing the metalorganic compounds to form a precursor mixture; filtering the precursor mixture to produce a spin-coating precursor; applying the spin-coating precursor to the wafer in a two-step spin coating procedure; baking the spin-coated wafer using a hot-plate bake to evaporate substantially all of the solvents; and annealing the spin-coated wafer to form a CaO-doped SrCu2O2 layer thereon.
Abstract translation: 掺有CaO的SrCu 2 O 2 O 2旋涂前体合成和低温p型薄膜沉积的方法包括制备晶片以在其上接受旋涂法 ; 选择金属有机化合物以形成SrCu 2 O 2 O 2前体，将金属有机化合物混合并回流以形成前体混合物; 过滤前体混合物以产生旋涂前体; 以两步旋涂方法将旋涂前驱体施加到晶片上; 使用热板烘烤烘烤旋涂的晶片以基本上蒸发所有溶剂; 以及对旋涂的晶片退火以在其上形成掺杂CaO的SrCu 2 O 2 O 2层。
