Semiconductor light emitting device and method for manufacturing same
    1.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US09153746B2

    公开(公告)日:2015-10-06

    申请号:US13601568

    申请日:2012-08-31

    摘要: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译: 根据实施例,半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上,并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上,并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部,并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

    Erasing apparatus and image erasing method
    6.
    发明授权
    Erasing apparatus and image erasing method 有权
    擦除装置和图像擦除方法

    公开(公告)号:US08670011B2

    公开(公告)日:2014-03-11

    申请号:US13484187

    申请日:2012-05-30

    IPC分类号: B41J29/16

    CPC分类号: B41J2/32 B41J2202/37

    摘要: In general, according to an embodiment, an erasing section erases the image on the sheet. A first conveying path conveys the sheet fed from a sheet feeding section and is provided with a reading section and a discharge section downstream of the reading section in a sheet conveying direction. A second conveying path is branched from the first conveying path downstream of the reading section in the sheet conveying direction and upstream of the discharge section in the sheet conveying direction. The second conveying path merges with the first conveying path upstream of the reading section in the sheet conveying direction and is provided with the erasing section. A sorting member, which is located at a branch point at which the second conveying path is branched from the first conveying path. A recording section is located on the first conveying path and records count information indicative of an erase count.

    摘要翻译: 通常,根据实施例,擦除部分擦除片材上的图像。 第一输送路径传送从供纸部供给的纸张,并且在纸张输送方向上设置有读取部分和读取部分下游的排出部分。 第二输送路径从纸张输送方向上的读取部分下游的第一输送路径和纸张输送方向上在排出部分的上游分支。 第二输送路径在纸张输送方向上与读取部分的上游的第一输送路径合并,并且设置有擦除部。 分选部件,位于第二输送路径从第一输送路径分支的分支点处。 记录部分位于第一传送路径上,并记录指示擦除次数的计数信息。

    Semiconductor light emitting device
    7.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号:US08614455B2

    公开(公告)日:2013-12-24

    申请号:US13424687

    申请日:2012-03-20

    IPC分类号: H01L33/00

    摘要: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译: 根据实施例,半导体发光器件包括层叠体,第一和第二电极,第一和第二互连,第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20130285064A1

    公开(公告)日:2013-10-31

    申请号:US13598504

    申请日:2012-08-29

    IPC分类号: H01L33/44 H01L33/32

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,p侧电极,n侧电极,荧光体层和透明膜。 半导体层具有第一面,与第一面相反的第二面和发光层。 p侧电极设置在包括发光层的区域的第二面上。 n侧电极设置在不包括发光层的区域的第二面上。 磷光体层设置在第一面上。 荧光体层包括分散在透明树脂中的透明树脂和荧光体。 透明膜设置在荧光体层上,粘合性低于透明树脂的粘合性。

    Semiconductor light emitting device and method for manufacturing same

    公开(公告)号:US08502260B2

    公开(公告)日:2013-08-06

    申请号:US12880673

    申请日:2010-09-13

    申请人: Yoshiaki Sugizaki

    发明人: Yoshiaki Sugizaki

    IPC分类号: H01L33/38

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a film covering a side face of the first metal pillar and a side face of the second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The film has a solder wettability poorer than a solder wettability of the first metal pillar and a solder wettability of the second metal pillar. The resin layer covers at least part of the film.