公开(公告)号：US06780757B2

公开(公告)日：2004-08-24

申请号：US10430402

申请日：2003-05-07

申请人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

发明人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC分类号： H01L214763

CPC分类号： H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

摘要： A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

摘要翻译： 一种制造半导体集成电路器件的方法包括以下步骤：（a）在具有多个通孔的绝缘膜上沉积由氮化钛制成的第一底层膜; （b）在第一底层膜上沉积钨膜，并通过含氟等离子体将钨膜回蚀刻，从而将钨膜留在连接孔中; （c）溅射蚀刻第一底层膜的表面以从第一底层膜的表面除去氟; 和（d）在第一底层膜上形成铝膜。 还描述了通过该方法获得的半导体集成电路器件。

公开(公告)号：US06538329B2

公开(公告)日：2003-03-25

申请号：US09933163

申请日：2001-08-21

申请人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

发明人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC分类号： H01L2348

CPC分类号： H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

摘要： A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

公开(公告)号：US06583049B2

公开(公告)日：2003-06-24

申请号：US09998644

申请日：2001-12-03

申请人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

发明人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC分类号： H01L214763

CPC分类号： H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

摘要： A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

公开(公告)号：US06300237B1

公开(公告)日：2001-10-09

申请号：US09245743

申请日：1999-02-08

申请人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

发明人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC分类号： H01L214763

CPC分类号： H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

摘要： A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

摘要翻译： 一种制造半导体集成电路器件的方法包括以下步骤：（a）在具有多个通孔的绝缘膜上沉积由氮化钛制成的第一底层膜; （b）在第一底层膜上沉积钨膜，并通过含氟等离子体将钨膜回蚀刻，从而将钨膜留在连接孔中; （c）溅射蚀刻第一底层膜的表面以从第一底层膜的表面除去氟; 和（d）在第一底层膜上形成铝膜。 还描述了通过该方法获得的半导体集成电路器件。

公开(公告)号：US5904556A

公开(公告)日：1999-05-18

申请号：US584065

申请日：1996-01-11

申请人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

发明人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14

摘要： A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

摘要翻译： 一种制造半导体集成电路器件的方法包括以下步骤：（a）在具有多个通孔的绝缘膜上沉积由氮化钛制成的第一底层膜; （b）在第一底层膜上沉积钨膜，并通过含氟等离子体将钨膜回蚀刻，从而将钨膜留在连接孔中; （c）溅射蚀刻第一底层膜的表面以从第一底层膜的表面除去氟; 和（d）在第一底层膜上形成铝膜。 还描述了通过该方法获得的半导体集成电路器件。

公开(公告)号：US5061985A

公开(公告)日：1991-10-29

申请号：US364463

申请日：1989-06-12

申请人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

发明人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L23/532

CPC分类号： H01L23/485 ,  H01L23/49855 ,  H01L23/53223 ,  H01L2924/0002

摘要： With the reduction in the size of semiconductor integrated circuit devices, there have been increases in the resistance at the contact portions of metal interconnections and in the incidence of contact failure. To solve these problems, the present invention provides a novel interconnection structure. Namely, a metal interconnection which has a barrier metal layer formed thereunder and which is also used to form electrode lead-out portions for external connection is arranged such that, among the following portions, that is, electrode portions of a plurality of elements fabricated on a semiconductor substrate in the form of an integrated circuit, interconnection portions between these elements, and the above-described electrode lead-out portions for external connection, those portions of the interconnection layer which are defined as the electrode portions of the elements and the interconnection portions are isolated from the semiconductor substrate by means of a barrier metal layer, while those portions of the interconnection layer which are defined as the electrode lead-out portions for external connection are formed not through the barrier metal layer but directly on the interlayer insulating layer.

摘要翻译： 随着半导体集成电路器件的尺寸的减小，金属互连接触部分的电阻和接触故障的发生率都有所增加。 为了解决这些问题，本发明提供了一种新的互连结构。 也就是说，在其下面形成有阻挡金属层并且也用于形成用于外部连接的电极引出部分的金属互连布置成使得在以下部分中，即在下列部分之中制造多个元件的电极部分 集成电路形式的半导体衬底，这些元件之间的互连部分和用于外部连接的上述电极引出部分，被定义为元件的电极部分的互连层的那些部分和互连 部分通过阻挡金属层与半导体基板隔离，而被定义为外部连接的电极引出部的互连层的那些部分不是通过阻挡金属层而是直接形成在层间绝缘层上 。

公开(公告)号：US4782037A

公开(公告)日：1988-11-01

申请号：US925458

申请日：1986-10-30

申请人： Akihiro Tomozawa ,  Yoku Kaino ,  Shigeru Shimada ,  Nozomi Horino ,  Yoshiaki Yoshiura ,  Osamu Tsuchiya ,  Shozo Hosoda

发明人： Akihiro Tomozawa ,  Yoku Kaino ,  Shigeru Shimada ,  Nozomi Horino ,  Yoshiaki Yoshiura ,  Osamu Tsuchiya ,  Shozo Hosoda

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/441 ,  H01L21/473

CPC分类号： H01L23/5329 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2924/0002

摘要： Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value.

摘要翻译： 这里公开了一种制造半导体集成电路器件的方法，其中形成在通过将多晶硅层与含有高熔点难熔金属的层（即，难熔金属层）或 难熔金属的硅化物层和由磷硅酸盐玻璃制成的第一绝缘膜，所述第一绝缘膜流过含有难熔金属的导电层，第二绝缘膜防止含有难熔金属的层通过玻璃流从多晶硅层剥离。 通过沉积形成第二绝缘膜以具有不小于预定值的厚度。