Lithographic mask structure and lithographic process
    1.
    发明授权
    Lithographic mask structure and lithographic process 失效
    平版印刷掩模结构和光刻工艺

    公开(公告)号:US4735877A

    公开(公告)日:1988-04-05

    申请号:US915376

    申请日:1986-10-06

    IPC分类号: G03F1/22 G03F7/20 G03F7/10

    摘要: There is disclosed a lithographic mask structure which comprises a masking material support film and an annular support substrate for supporting the masking material support film at the periphery, the masking material support film containing a fluorescent substance. Also disclosed is a lithographic process for exposing a photosensitive material to irradiation with a radiation beam through a masking material support film provided with a masking material pattern-wise.

    摘要翻译: 公开了一种光刻掩模结构,其包括掩模材料支撑膜和用于在外围支撑掩模材料支撑膜的环形支撑基板,所述掩模材料支撑膜含有荧光物质。 还公开了一种光刻工艺,用于将感光材料暴露于通过图案化地设置有掩模材料的掩模材料支撑膜的辐射束照射。