公开(公告)号：US5203958A

公开(公告)日：1993-04-20

申请号：US735277

申请日：1991-07-24

申请人： Izumi Arai ,  Yoshifumi Tahara

发明人： Izumi Arai ,  Yoshifumi Tahara

IPC分类号： H01L21/00 ,  H01L21/687

CPC分类号： H01L21/68721 ,  H01L21/67069 ,  H01L21/67109

摘要： A processing method includes the steps of placing an object to be processed on a susceptor arranged in a hermetic container, preliminarily introducing a small amount of heat transfer medium gas to a gap between the object to be processed and the susceptor while evacuating the gap, introducing the heat transfer medium gas to the gap until a pressure thereof reaches a predetermined value while controlling the pressure thereof by controlling an evacuation amount from the gap, and processing the object to be processed.

公开(公告)号：US5164034A

公开(公告)日：1992-11-17

申请号：US762087

申请日：1991-09-19

申请人： Izumi Arai ,  Yoshifumi Tahara ,  Yoshio Ishikawa

发明人： Izumi Arai ,  Yoshifumi Tahara ,  Yoshio Ishikawa

IPC分类号： H01L21/00 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/67207 ,  H01L21/3081 ,  H01L21/31138 ,  H01L21/67069

摘要： A substrate processing apparatus comprising a housing section for housing substrates to be processed, a first chamber for performing anisotropic etching treatment, conveyor means for conveying the substrates from the housing section to the first chamber, and a second chamber for performing at least one of isotropic etching treatment and ashing treatment with respect to a substrate which has been subjected to the anisotropic etching treatment in the first chamber. And a method of processing substrates, comprising the steps of performing anisotropic etching treatment in a first chamber with respect to the substrates, and performing at least one of isotropic etching treatment and ashing treatment in a second chamber with respect to the substrates which have been subjected to the anisotropic etching treatment in the first chamber and have been kept unexposed to the atmosphere, the isotropic etching treatment and the ashing treatment being performed simultaneously or in succession.

公开(公告)号：US4931135A

公开(公告)日：1990-06-05

申请号：US287156

申请日：1988-12-21

申请人： Takao Horiuchi ,  Izumi Arai ,  Yoshifumi Tahara

发明人： Takao Horiuchi ,  Izumi Arai ,  Yoshifumi Tahara

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L2924/0002

摘要： A mounting surface of an electrode for mounting an object to be processed thereon is projected to be a curved surface identical to a curved surface obtained by deforming the object to be processed by a uniform load, and etching of the object to be processed is performed. Etching of the object to be processed can be easily and stably performed, thereby improving yield and productivity.

公开(公告)号：US06423242B1

公开(公告)日：2002-07-23

申请号：US09437447

申请日：1999-11-10

申请人： Masayuki Kojima ,  Yoshifumi Tahara ,  Masayuki Tomoyasu ,  Akira Koshiishi

发明人： Masayuki Kojima ,  Yoshifumi Tahara ,  Masayuki Tomoyasu ,  Akira Koshiishi

IPC分类号： C03C1500

CPC分类号： H01L21/76897 ,  C03C17/3435 ,  C03C2218/33 ,  H01J37/32082 ,  H01L21/31116

摘要： When in a chamber, an upper electrode and a lower electrode (suscepter) are provided opposite to each other and with a to-be-treated substrate supported by the lower electrode, the high-frequency electric field is formed between the upper electrode and the lower electrode to generate plasma of the process gas while introducing the process gas into the chamber held to the reduced pressure, and an etching is provided to the to-be-treated substrate with this plasma, the high frequency in the range from 50 to 150 MHZ, for example, 60 MHz, is applied to the upper electrode, and the high frequency in the range from 1 to 4 MHz, for example, 2 MHz, is applied to the lower electrode.

摘要翻译： 当在一个室中，上电极和下电极（副电极）彼此相对地设置有被下电极支撑的待处理衬底，高频电场形成在上电极和 下部电极产生处理气体的等离子体，同时将工艺气体引入保持在减压状态的室中，并且利用该等离子体向被处理衬底提供蚀刻，高频在50至150范围内 向上电极施加例如60MHz的MHZ，向下电极施加1〜4MHz范围的高频，例如2MHz。

公开(公告)号：US5858258A

公开(公告)日：1999-01-12

申请号：US817961

申请日：1992-01-08

申请人： Hiroshi Kojima ,  Yoshifumi Tahara ,  Izumi Arai

发明人： Hiroshi Kojima ,  Yoshifumi Tahara ,  Izumi Arai

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H05H1/00 ,  B05D5/00

CPC分类号： H01J37/3244 ,  C23F4/00 ,  H01J37/32862 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/334

摘要： A method of plasma-processing which includes the step of plasma-processing a matter mounted on a component in a plasma processing vessel by using plasma gases, and the step of introducing an inactive gas into the plasma processing vessel when no plasma process is conducted in the vessel and gases resulted from the previous plasma process remain therein.

摘要翻译： 一种等离子体处理方法，包括通过使用等离子体气体对安装在等离子体处理容器中的部件上的物质进行等离子体处理的步骤，以及在不进行等离子体处理时将惰性气体引入等离子体处理容器的步骤 由先前的等离子体处理产生的容器和气体保留在其中。

公开(公告)号：US5494522A

公开(公告)日：1996-02-27

申请号：US214282

申请日：1994-03-17

申请人： Shuji Moriya ,  Masahiro Ogasawara ,  Jun Yashiro ,  Yoshifumi Tahara ,  Satoru Kawakami ,  Susumu Tanaka

发明人： Shuji Moriya ,  Masahiro Ogasawara ,  Jun Yashiro ,  Yoshifumi Tahara ,  Satoru Kawakami ,  Susumu Tanaka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45568 ,  C23C16/4401 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/022 ,  H01J2237/184

摘要： A plasma process system for producing gas plasma in an air-tight chamber by high frequency power to process a substrate with the gas plasma comprising a lower electrode on which the substrate to be plasma-processed is mounted, an upper electrode arranged above the lower electrode, a plasma generator circuit for generating plasma between the upper and the lower electrode, a power source for supplying high frequency power to the plasma generator circuit, and bias generator for generating negative voltage in the upper or lower electrode when high frequency power is supplied from the power source to the upper or lower electrode, wherein the plasma generator circuit includes transformer for supplying a part of high frequency power, which is supplied from the power source, to the bias generator.

摘要翻译： 一种用于通过高频功率在气密室中产生气体等离子体的等离子体处理系统，其中包括安装有待等离子体处理的衬底的下电极的气体等离子体处理衬底;布置在下电极上方的上电极 用于在上下电极之间产生等离子体的等离子体发生器电路，用于向等离子体发生器电路提供高频电力的电源，以及当从高电源供应高频电力时在上电极或下电极产生负电压的偏置发生器 电源到上电极或下电极，其中等离子体发生器电路包括用于将从电源提供的一部分高频电力提供给偏置发生器的变压器。

公开(公告)号：US5382311A

公开(公告)日：1995-01-17

申请号：US168367

申请日：1993-12-17

申请人： Kenji Ishikawa ,  Mitsuaki Komino ,  Tadashi Mitui ,  Teruo Iwata ,  Izumi Arai ,  Yoshifumi Tahara

发明人： Kenji Ishikawa ,  Mitsuaki Komino ,  Tadashi Mitui ,  Teruo Iwata ,  Izumi Arai ,  Yoshifumi Tahara

IPC分类号： C23C16/458 ,  H01L21/683 ,  H01L21/00

CPC分类号： C23C16/466 ,  C23C16/4586 ,  H01L21/6831

摘要： A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

摘要翻译： 用于半导体晶片的等离子体蚀刻装置包括设置在真空处理室中的基座。 在基座的安装面形成有用于使传热气体流动的槽。 该槽包括沿着安装表面的周边边缘形成的环形槽部分，并且垂直延伸穿过基座的气体路径连接到环形槽部分。 片状静电卡盘气密地粘附在基座的安装面上以覆盖凹槽。 在静电卡盘中形成有多个通孔，这些孔沿着槽的上方配置。 传热气体通过气路，凹槽和通孔供应在静电卡盘和半导体晶片之间。 传热气体有助于从布置在基座下方的液氮源将冷转移到晶片。

公开(公告)号：US5270266A

公开(公告)日：1993-12-14

申请号：US988669

申请日：1992-12-10

申请人： Yoshihisa Hirano ,  Yoshifumi Tahara ,  Isahiro Hasegawa ,  Keiji Horioka

发明人： Yoshihisa Hirano ,  Yoshifumi Tahara ,  Isahiro Hasegawa ,  Keiji Horioka

IPC分类号： B23Q3/15 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/465

CPC分类号： H01L21/67109 ,  H01J37/3244 ,  H01J2237/2001 ,  Y10S148/05

摘要： A method of adjusting the temperature of a semiconductor wafer comprising mounting and attracting the wafer on a susceptor in a process chamber, exhausting and decompressing the process chamber, controlling the temperature of the wafer to become equal to a process temperature while cooling or heating the susceptor, supplying process gas into the chamber to process the wafer with this process gas, and introducing CF.sub.4 gas into interstices between the wafer and the susceptor through the susceptor to allow heat exchange to be achieved between them. CF.sub.4 gas includes same components as at least some of those of the process gas and it is more excellent in heat transmitting characteristic than helium gas. Even when CF.sub.4 gas is leaked into a process area, therefore, any influence is not added to the process.

摘要翻译： 一种调节半导体晶片的温度的方法，包括在处理室中的基座上安装和吸引晶片，对处理室进行排气和减压，在冷却或加热基座的同时将晶片的温度控制为等于处理温度 将处理气体供应到室中以用该处理气体处理晶片，并且通过基座将CF 4气体引入到晶片和基座之间的间隙中以允许在它们之间实现热交换。 CF4气体包括与工艺气体中的至少一些相同的组分，并且其传热特性比氦气更优异。 因此，即使CF4气体泄漏到处理区域中，也不会对过程产生任何影响。

公开(公告)号：US5089083A

公开(公告)日：1992-02-18

申请号：US512151

申请日：1990-04-20

申请人： Hiroshi Kojima ,  Yoshifumi Tahara ,  Izumi Arai

发明人： Hiroshi Kojima ,  Yoshifumi Tahara ,  Izumi Arai

IPC分类号： H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31116 ,  H01L21/32137

摘要： A plasma etching method including the steps of mounting an object to be processed in a region formed between one electrode and an other electrode, introducing an etching gas into the region, setting an area of the contact surface of the other electrode, which is in contact with the etching gas, to a predetermined value in accordance with a predetermined selection ratio used in etching the object, generating plasma of the etching gas by applying a predetermined electric power between the electrodes after setting the area of the contact surface of the other electrode, which is in contact with the etching gas, to the predetermined value, and etching the object by the plasma.

公开(公告)号：US6110287A

公开(公告)日：2000-08-29

申请号：US843129

申请日：1997-04-28

申请人： Izumi Arai ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Yoshinobu Mitano ,  Shunichi Iimuro ,  Kazuo Fukasawa ,  Yutaka Miura ,  Shozo Hosoda

发明人： Izumi Arai ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Yoshinobu Mitano ,  Shunichi Iimuro ,  Kazuo Fukasawa ,  Yutaka Miura ,  Shozo Hosoda

IPC分类号： C23C16/509 ,  H01J37/32 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  C23C16/5096 ,  H01J37/3244

摘要： A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.

摘要翻译： 一种等离子体处理方法，其中将高频电力供应到其中安装有被处理物体的处理室，从而在处理室中产生等离子体，并且在等离子体的气氛中对物体进行处理，其中 高频功率受到低频功率的调制。 在一个实施例中，通过使用具有随时间变化的电流方向的电力在处理室中产生等离子体，并且待处理物体在等离子体的气氛中被处理，其中具有基本频率的功率为 以频率等于基本频率的n倍（n =整数）的频率进行频率调制。 在本发明的等离子体处理装置中，当通过形成在电极中的第一气体导入孔将处理气体供给到处理室时，对被保持在对置电极上的被处理物进行等离子体处理。 提供了一种电阻，其应用[施加装置]对来自气体导入装置的气体导入孔流向处理室的工艺气体施加阻力，使得当气体导入装置中的过程压力 在处理室中设定为0.5乇以下。