摘要:
A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.
摘要:
An electret device includes an electret film capable of storing charges and a protective film formed so as to substantially surround a side end surface of the electret film.
摘要:
An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.
摘要:
An electrostatic induction generator requiring no electric power supply device and capable of being mounted on a printed board is obtained. This electrostatic induction generator includes a pair of first electrodes capable of storing charges, a pair of vibrating electrodes capable of vibrating in a first direction and a second direction different from the first direction, and charged with opposite charges due to charges stored in the pair of first electrodes respectively, and a second electrode for electrically connecting the pair of vibrating electrodes to each other in a case where the pair of vibrating electrodes are at prescribed positions.
摘要:
An electret device includes an electret film capable of storing charges and a protective film formed so as to substantially surround a side end surface of the electret film.
摘要:
An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.
摘要:
An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.
摘要:
An electrostatic induction generator requiring no electric power supply device and capable of being mounted on a printed board is obtained. This electrostatic induction generator includes a pair of first electrodes capable of storing charges, a pair of vibrating electrodes capable of vibrating in a first direction and a second direction different from the first direction, and charged with opposite charges due to charges stored in the pair of first electrodes respectively, and a second electrode for electrically connecting the pair of vibrating electrodes to each other in a case where the pair of vibrating electrodes are at prescribed positions.
摘要:
A semiconductor device capable of preventing an interlayer dielectric film from deterioration resulting from a liquid such as a chemical solution penetrating into the interlayer dielectric film and recovering the interlayer dielectric film from deterioration with a prescribed gas is obtained. This semiconductor device comprises a first insulating film formed on a substrate and a first gas-liquid separation film, formed on at least a part of the surface of the first insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas.
摘要:
A linear motor capable of attaining thinning is obtained. This linear motor (100) includes a spiral coil (141, 142, 441, 442); and a movable portion (120, 220), including a first pole face (121a) having a first polarity and a second pole face (122a) having a second polarity different from the first polarity on a surface opposed to the spiral coil, provided to be movable in a direction along the surface of the spiral coil.