公开(公告)号：US08659020B2

公开(公告)日：2014-02-25

申请号：US13378562

申请日：2010-05-28

申请人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

发明人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3221

摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 通过CVD法在硅晶体衬底的表面上以高浓度掺杂有磷和锗的方式生长硅外延层。 之后，在硅晶体基板的背面进行用于生长多晶硅层的PBS形成工序。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

公开(公告)号：US20120112319A1

公开(公告)日：2012-05-10

申请号：US13382674

申请日：2010-07-01

申请人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

发明人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

IPC分类号： H01L29/36 ,  H01L21/20

CPC分类号： H01L21/3221 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 在已经以高浓度掺杂有磷和锗的硅晶体衬底的背面执行用于生长多晶硅层的PBS形成步骤，以进行烘烤处理。 然后将硅晶体衬底的表面层抛光至预定量之后，通过CVD法生长硅外延层。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

公开(公告)号：US20120112190A1

公开(公告)日：2012-05-10

申请号：US13378562

申请日：2010-05-28

申请人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

发明人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/3221

摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A silicon epitaxial layer is grown by a CVD method on the surface of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration. After that, a PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 通过CVD法在硅晶体衬底的表面上以高浓度掺杂有磷和锗的方式生长硅外延层。 之后，在硅晶体基板的背面进行用于生长多晶硅层的PBS形成工序。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。

公开(公告)号：US08420514B2

公开(公告)日：2013-04-16

申请号：US13382674

申请日：2010-07-01

申请人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

发明人： Tadashi Kawashima ,  Masahiro Yoshikawa ,  Akira Inoue ,  Yoshiya Yoshida ,  Kazuhiro Iriguchi ,  Toshiyuki Isami

IPC分类号： H01L29/36

CPC分类号： H01L21/3221 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

摘要： It is an object to provide an epitaxial silicon wafer that is provided with an excellent gettering ability in which a polysilicon layer is formed on the rear face side of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) have been doped. A PBS forming step for growing a polysilicon layer is executed on the rear face side of a silicon crystal substrate into which phosphorus and germanium have been doped at a high concentration to execute a baking treatment. After a surface layer of the silicon crystal substrate is then polished up to a predetermined amount, a silicon epitaxial layer is grown by a CVD method. By the above steps, the number of LPDs (caused by an SF) that occur on the surface of the epitaxial silicon wafer due to the SF can be greatly reduced.

摘要翻译： 本发明的目的是提供一种在掺杂有磷（P）和锗（Ge）的硅晶体衬底的背面侧上形成多晶硅层的优异的吸气能力的外延硅晶片。 在已经以高浓度掺杂有磷和锗的硅晶体衬底的背面执行用于生长多晶硅层的PBS形成步骤，以进行烘烤处理。 然后将硅晶体衬底的表面层抛光至预定量之后，通过CVD法生长硅外延层。 通过上述步骤，可以大大减少由于SF而在外延硅晶片的表面上发生的LPD（由SF引起）的数量。